Nanoionic Resistive Switching Memories: On the Physical Nature of the Dynamic Reset Process

Physics of the Switching Kinetics in Resistive Memories

(2015) Stephan Menzel et al.   ADVANCED FUNCTIONAL MATERIALS

Effect of RESET Voltage on Distribution of SET Switching Time of Bipolar Resistive Switching in a Tantalum Oxide Thin Film

(2015) Yoshifumi Nishi et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Comprehensive Physical Model of Dynamic Resistive Switching in an Oxide Memristor

(2014) Sungho Kim et al.   ACS Nano

Electronic Instabilities Leading to Electroformation of Binary Metal Oxide-based Resistive Switches

(2014) Abhishek A. Sharma et al.   ADVANCED FUNCTIONAL MATERIALS

Origin of the SET Kinetics of the Resistive Switching in Tantalum Oxide Thin Films

(2014) Yoshifumi Nishi et al.   IEEE ELECTRON DEVICE LETTERS

Impact of composition and crystallization behavior of atomic layer deposited strontium titanate films on the resistive switching of Pt/STO/TiN devices

(2014) N. Aslam et al.   JOURNAL OF APPLIED PHYSICS

Multi-level control of conductive nano-filament evolution in HfO2 ReRAM by pulse-train operations

(2014) L. Zhao et al.   Nanoscale

Anomalous effect due to oxygen vacancy accumulation below the electrode in bipolar resistance switching Pt/Nb:SrTiO3 cells

(2014) Shinbuhm Lee et al.   APL Materials

HfOx-Based Vertical Resistive Switching Random Access Memory Suitable for Bit-Cost-Effective Three-Dimensional Cross-Point Architecture

(2013) Shimeng Yu et al.   ACS Nano

Improvement of Data Retention During Long-Term Use by Suppressing Conductive Filament Expansion in ${\rm TaO}_{x}$ Bipolar-ReRAM

(2013) Takeki Ninomiya et al.   IEEE ELECTRON DEVICE LETTERS

Current Compliance-Dependent Nonlinearity in ${\rm TiO}_{2}$ ReRAM

(2013) Florian Lentz et al.   IEEE ELECTRON DEVICE LETTERS

Conductive Filament Scaling of ${\rm TaO}_{\rm x}$ Bipolar ReRAM for Improving Data Retention Under Low Operation Current

(2013) Takeki Ninomiya et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Endurance/Retention Trade-off on $\hbox{HfO}_{2}/\hbox{Metal}$ Cap 1T1R Bipolar RRAM

(2013) Yang Yin Chen et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

State Dynamics and Modeling of Tantalum Oxide Memristors

(2013) John Paul Strachan et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Effect of Oxidation Amount on Gradual Switching Behavior in Reset Transition of Al/TiO2-Based Resistive Switching Memory and Its Mechanism for Multilevel Cell Operation

(2013) Jeong-Hoon Oh et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Physical electro-thermal model of resistive switching in bi-layered resistance-change memory

(2013) Sungho Kim et al.   Scientific Reports

Transport properties of two finite armchair graphene nanoribbons

(2013) Luis Rosales et al.   Nanoscale Research Letters

Thermophoresis/diffusion as a plausible mechanism for unipolar resistive switching in metal–oxide–metal memristors

(2012) Dmitri B. Strukov et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Oxygen migration induced resistive switching effect and its thermal stability in W/TaOx/Pt structure

(2012) C. Chen et al.   APPLIED PHYSICS LETTERS

Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part I: Experimental Study

(2012) Federico Nardi et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part II: Modeling

(2012) Stefano Larentis et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Modeling for multilevel switching in oxide-based bipolar resistive memory

(2012) Ji-Hyun Hur et al.   NANOTECHNOLOGY

Computational investigations into the operating window for memristive devices based on homogeneous ionic motion

(2011) Mohammad Noman et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Investigating the switching dynamics and multilevel capability of bipolar metal oxide resistive switching memory

(2011) Shimeng Yu et al.   APPLIED PHYSICS LETTERS

Multibit Operation of $\hbox{TiO}_{x}$ -Based ReRAM by Schottky Barrier Height Engineering

(2011) Jubong Park et al.   IEEE ELECTRON DEVICE LETTERS

Analysis of Transient Currents During Ultrafast Switching of $\hbox{TiO}_{2}$ Nanocrossbar Devices

(2011) C. Hermes et al.   IEEE ELECTRON DEVICE LETTERS

An Electronic Synapse Device Based on Metal Oxide Resistive Switching Memory for Neuromorphic Computation

(2011) Shimeng Yu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Measuring the switching dynamics and energy efficiency of tantalum oxide memristors

(2011) John Paul Strachan et al.   NANOTECHNOLOGY

Sub-nanosecond switching of a tantalum oxide memristor

(2011) Antonio C Torrezan et al.   NANOTECHNOLOGY

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

(2011) Myoung-Jae Lee et al.   NATURE MATERIALS

Coexistence of Filamentary and Homogeneous Resistive Switching in Fe-Doped SrTiO3 Thin-Film Memristive Devices

(2010) Ruth Muenstermann et al.   ADVANCED MATERIALS

High switching endurance in TaOx memristive devices

(2010) J. Joshua Yang et al.   APPLIED PHYSICS LETTERS

On the Gradual Unipolar and Bipolar Resistive Switching of TiN\HfO[sub 2]\Pt Memory Systems

(2010) L. Goux et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Modeling for bipolar resistive memory switching in transition-metal oxides

(2010) Ji Hyun Hur et al.   PHYSICAL REVIEW B

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

The mechanism of electroforming of metal oxide memristive switches

(2009) J Joshua Yang et al.   NANOTECHNOLOGY

Coupled Ionic and Electronic Transport Model of Thin-Film Semiconductor Memristive Behavior

(2009) Dmitri B. Strukov et al.   Small

Memristive switching mechanism for metal/oxide/metal nanodevices

(2008) J. Joshua Yang et al.   Nature Nanotechnology