Role of metal-oxide interfaces in the multiple resistance switching regimes of Pt/HfO2/TiN devices

Resistive Switching in High-Density Nanodevices Fabricated by Block Copolymer Self-Assembly

(2015) Jacopo Frascaroli et al.   ACS Nano

Resistive switching and synaptic properties of fully atomic layer deposition grown TiN/HfO2/TiN devices

(2015) Yu. Matveyev et al.   JOURNAL OF APPLIED PHYSICS

Effect of Al doping on the retention behavior of HfO2 resistive switching memories

(2015) Jacopo Frascaroli et al.   MICROELECTRONIC ENGINEERING

Complementary and bipolar regimes of resistive switching in TiN/HfO2/TiN stacks grown by atomic-layer deposition

(2015) K. V. Egorov et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

RRAM characteristics using a new Cr/GdOx/TiN structure

(2015) Debanjan Jana et al.   Nanoscale Research Letters

Phase Stabilization of Al:HfO2 Grown on InxGa1–xAs Substrates (x = 0, 0.15, 0.53) via Trimethylaluminum-Based Atomic Layer Deposition

(2014) Elena Cianci et al.   ACS Applied Materials & Interfaces

Engineering of the Chemical Reactivity of the Ti/HfO2 Interface for RRAM: Experiment and Theory.

(2014) Pauline Calka et al.   ACS Applied Materials & Interfaces

Comprehensive Physical Model of Dynamic Resistive Switching in an Oxide Memristor

(2014) Sungho Kim et al.   ACS Nano

Role of interfacial layer on complementary resistive switching in the TiN/HfOx/TiN resistive memory device

(2014) H. Z. Zhang et al.   APPLIED PHYSICS LETTERS

Analytical Modeling of Oxide-Based Bipolar Resistive Memories and Complementary Resistive Switches

(2014)   IEEE TRANSACTIONS ON ELECTRON DEVICES

Impedance spectroscopic analysis on effects of partial oxidation of TiN bottom electrode and microstructure of amorphous and crystalline HfO2 thin films on their bipolar resistive switching

(2014) Ji-Wook Yoon et al.   Nanoscale

Formation and disruption of conductive filaments in a HfO2/TiN structure

(2014) S Brivio et al.   NANOTECHNOLOGY

A Review on Resistive Switching in High-k Dielectrics: A Nanoscale Point of View Using Conductive Atomic Force Microscope

(2014) Mario Lanza   Materials

Memristive devices in computing system

(2013) J. Joshua Yang et al.   ACM Journal on Emerging Technologies in Computing Systems

Multiple Memory States in Resistive Switching Devices Through Controlled Size and Orientation of the Conductive Filament

(2013) S. Balatti et al.   ADVANCED MATERIALS

Effect of Ti doping and annealing on multi-level forming-free resistive random access memories with atomic layer deposited HfTiOx nanolaminate

(2013) B. Chakrabarti et al.   MICROELECTRONIC ENGINEERING

Statistical insight into controlled forming and forming free stacks for HfOx RRAM

(2013) N. Raghavan et al.   MICROELECTRONIC ENGINEERING

Microscopy study of the conductive filament in HfO2 resistive switching memory devices

(2013) S. Privitera et al.   MICROELECTRONIC ENGINEERING

Chemical and structural properties of conducting nanofilaments in TiN/HfO2-based resistive switching structures

(2013) P Calka et al.   NANOTECHNOLOGY

Effects of Thermal Treatments on the Trapping Properties of HfO$_{2}$ Films for Charge Trap Memories

(2012) Sabina Spiga et al.   Applied Physics Express

Nonlinear dependence of set time on pulse voltage caused by thermal accelerated breakdown in the Ti/HfO2/Pt resistive switching devices

(2012) M. G. Cao et al.   APPLIED PHYSICS LETTERS

First-principles simulation of oxygen diffusion in HfOx: Role in the resistive switching mechanism

(2012) S. Clima et al.   APPLIED PHYSICS LETTERS

Highly Uniform, Self-Compliance, and Forming-Free ALD $\hbox{HfO}_{2}$ -Based RRAM With Ge Doping

(2012) Zhongrui Wang et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Complementary Switching in Oxide-Based Bipolar Resistive-Switching Random Memory

(2012) Federico Nardi et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Forming-Free Reversible Bipolar Resistive Switching Behavior in Al-Doped HfO2 Metal–Insulator–Metal Devices

(2012) R. Mahapatra et al.   JOURNAL OF ELECTRONIC MATERIALS

Effect of low constant current stress treatment on the performance of the Cu/ZrO2/Pt resistive switching device

(2012) Hongwei Xie et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Conduction mechanism of TiN/HfOx/Pt resistive switching memory: A trap-assisted-tunneling model

(2011) Shimeng Yu et al.   APPLIED PHYSICS LETTERS

Roles and Effects of TiN and Pt Electrodes in Resistive-Switching HfO2 Systems

(2011) L. Goux et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Modeling the Universal Set/Reset Characteristics of Bipolar RRAM by Field- and Temperature-Driven Filament Growth

(2011) Daniele Ielmini   IEEE TRANSACTIONS ON ELECTRON DEVICES

Charging phenomena in dielectric/semiconductor heterostructures during x-ray photoelectron spectroscopy measurements

(2011) M. Perego et al.   JOURNAL OF APPLIED PHYSICS

Metal oxide resistive memory switching mechanism based on conductive filament properties

(2011) G. Bersuker et al.   JOURNAL OF APPLIED PHYSICS

Materials and process aspect of cross-point RRAM (invited)

(2011) Joonmyoung Lee et al.   MICROELECTRONIC ENGINEERING

Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook

(2011) Kyung Min Kim et al.   NANOTECHNOLOGY

Evidences of oxygen-mediated resistive-switching mechanism in TiN\HfO2\Pt cells

(2010) L. Goux et al.   APPLIED PHYSICS LETTERS

On the Gradual Unipolar and Bipolar Resistive Switching of TiN\HfO[sub 2]\Pt Memory Systems

(2010) L. Goux et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Resistance switching in HfO2 metal-insulator-metal devices

(2010) P. Gonon et al.   JOURNAL OF APPLIED PHYSICS

Resistive switching memory: observations with scanning probe microscopy

(2010) Min Hwan Lee et al.   Nanoscale

Physicochemical and electrical characterizations of atomic layer deposition grown HfO[sub 2] on TiN and Pt for metal-insulator-metal application

(2009) C. Jorel et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B

The role of the HfO2–TiN interface in capacitance–voltage nonlinearity of Metal-Insulator-Metal capacitors

(2009) Ch. Wenger et al.   THIN SOLID FILMS

Reduction in the reset current in a resistive random access memory consisting of NiOx brought about by reducing a parasitic capacitance

(2008) K. Kinoshita et al.   APPLIED PHYSICS LETTERS

XPS and IPE analysis of HfO2 band alignment with high-mobility semiconductors

(2008) M. Perego et al.   MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING