Structural Polymorphism Kinetics Promoted by Charged Oxygen Vacancies in HfO2

Ferroelectricity of Hf $_{0.5}$ Zr $_{0.5}$ O₂ Thin Films Free From the Influence of Electrodes by Using Al₂O₃ Capping Layers

(2022) Jiaxian Wan et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Convert Widespread Paraelectric Perovskite to Ferroelectrics

(2022) Hongwei Wang et al.   PHYSICAL REVIEW LETTERS

Highly enhanced ferroelectricity in HfO 2 -based ferroelectric thin film by light ion bombardment

(2022) Seunghun Kang et al.   SCIENCE

Intrinsic ferroelectricity in Y-doped HfO2 thin films

(2022) Yu Yun et al.   NATURE MATERIALS

Impact of vacancies and impurities on ferroelectricity in PVD- and ALD-grown HfO2 films

(2021) Lutz Baumgarten et al.   APPLIED PHYSICS LETTERS

CMOS-compatible ferroelectric NAND flash memory for high-density, low-power, and high-speed three-dimensional memory

(2021) Min-Kyu Kim et al.   Science Advances

Reversible oxygen migration and phase transitions in hafnia-based ferroelectric devices

(2021) Pavan Nukala et al.   SCIENCE

Intrinsic Defect Limit to the Growth of Orthorhombic HfO 2 and (Hf,Zr)O 2 with Strong Ferroelectricity: First‐Principles Insights

(2021) Jinchen Wei et al.   ADVANCED FUNCTIONAL MATERIALS

Ordering of Oxygen Vacancies and Related Ferroelectric Properties in HfO2−δ

(2021) Konstantin Z. Rushchanskii et al.   PHYSICAL REVIEW LETTERS

Trilinear-coupling-driven ferroelectricity in HfO2

(2021) Francesco Delodovici et al.   Physical Review Materials

Resistive Switching in HfO2–x/La0.67Sr0.33MnO3 Heterostructures: An Intriguing Case of Low H-Field Susceptibility of an E-Field Controlled Active Interface

(2021) Vivek Antad et al.   ACS Applied Materials & Interfaces

The Past, the Present, and the Future of Ferroelectric Memories

(2020) T. Mikolajick et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

A highly CMOS compatible hafnia-based ferroelectric diode

(2020) Qing Luo et al.   Nature Communications

Interface chemistry of pristine TiN/La: Hf 0.5 Zr 0.5 O 2 capacitors

(2020) W. Hamouda et al.   APPLIED PHYSICS LETTERS

Scale-free ferroelectricity induced by flat phonon bands in HfO2

(2020) Hyun-Jae Lee et al.   SCIENCE

Stabilization of Competing Ferroelectric Phases of HfO2 under Epitaxial Strain

(2020) Yubo Qi et al.   PHYSICAL REVIEW LETTERS

Impact of oxygen vacancies on monoclinic hafnium oxide and band alignment with semiconductors

(2020) Jibao Wu   Materials Today Communications

Role of Oxygen Vacancies at the TiO 2 /HfO 2 Interface in Flexible Oxide‐Based Resistive Switching Memory

(2019) Rulin Zhang et al.   Advanced Electronic Materials

Effects of growth orientations and epitaxial strains on phase stability of HfO2 thin films

(2019) Shi Liu et al.   PHYSICAL REVIEW MATERIALS

Fluid Imprint and Inertial Switching in Ferroelectric La:HfO2 Capacitors

(2019) Pratyush Buragohain et al.   ACS Applied Materials & Interfaces

The effects of oxygen vacancies on ferroelectric phase transition of HfO2-based thin film from first-principle

(2019) Y. Zhou et al.   COMPUTATIONAL MATERIALS SCIENCE

Origin of Ferroelectric Phase in Undoped HfO 2 Films Deposited by Sputtering

(2019) Terence Mittmann et al.   Advanced Materials Interfaces

Filament Growth and Resistive Switching in Hafnium Oxide Memristive Devices

(2018) Sven Dirkmann et al.   ACS Applied Materials & Interfaces

Resistive switching study in HfO2 based resistive memories by conductive atomic force microscopy in vacuum

(2018) A. K. Singh et al.   JOURNAL OF APPLIED PHYSICS

Atomic Structure of Domain and Interphase Boundaries in Ferroelectric HfO2

(2018) Everett D. Grimley et al.   Advanced Materials Interfaces

A High-Speed and Low-Power Multistate Memory Based on Multiferroic Tunnel Junctions

(2018) Weichuan Huang et al.   Advanced Electronic Materials

Analysis of Performance Instabilities of Hafnia-Based Ferroelectrics Using Modulus Spectroscopy and Thermally Stimulated Depolarization Currents

(2018) Franz P. G. Fengler et al.   Advanced Electronic Materials

A rhombohedral ferroelectric phase in epitaxially strained Hf0.5Zr0.5O2 thin films

(2018) Yingfen Wei et al.   NATURE MATERIALS

Modeling ferroelectric film properties and size effects from tetragonal interlayer in Hf1–xZrxO2 grains

(2017) Christopher Künneth et al.   JOURNAL OF APPLIED PHYSICS

Kinetic pathway of the ferroelectric phase formation in doped HfO2 films

(2017) Lun Xu et al.   JOURNAL OF APPLIED PHYSICS

Factors Favoring Ferroelectricity in Hafnia: A First-Principles Computational Study

(2017) Rohit Batra et al.   Journal of Physical Chemistry C

Surface and grain boundary energy as the key enabler of ferroelectricity in nanoscale hafnia-zirconia: a comparison of model and experiment

(2017) Min Hyuk Park et al.   Nanoscale

An extensive study of the influence of dopants on the ferroelectric properties of HfO2

(2017) S. Starschich et al.   Journal of Materials Chemistry C

A comprehensive study on the structural evolution of HfO2 thin films doped with various dopants

(2017) M. H. Park et al.   Journal of Materials Chemistry C

Si Doped Hafnium Oxide-A “Fragile” Ferroelectric System

(2017) Claudia Richter et al.   Advanced Electronic Materials

Ferroelectric phase stabilization of HfO2by nitrogen doping

(2016) Lun Xu et al.   Applied Physics Express

Ferroelectricity emerging in strained (111)-textured ZrO2 thin films

(2016) Zhen Fan et al.   APPLIED PHYSICS LETTERS

Stabilization of metastable phases in hafnia owing to surface energy effects

(2016) Rohit Batra et al.   APPLIED PHYSICS LETTERS

Sub-10 nm low current resistive switching behavior in hafnium oxide stack

(2016) Y. Hou et al.   APPLIED PHYSICS LETTERS

Impact of mechanical stress on ferroelectricity in (Hf0.5Zr0.5)O2 thin films

(2016) Takahisa Shiraishi et al.   APPLIED PHYSICS LETTERS

Filament-Induced Anisotropic Oxygen Vacancy Diffusion and Charge Trapping Effects in Hafnium Oxide RRAM

(2016) Dan Duncan et al.   IEEE ELECTRON DEVICE LETTERS

Structural Changes Underlying Field-Cycling Phenomena in Ferroelectric HfO2Thin Films

(2016) Everett D. Grimley et al.   Advanced Electronic Materials

Ferroelectricity and Antiferroelectricity of Doped Thin HfO2-Based Films

(2015) Min Hyuk Park et al.   ADVANCED MATERIALS

Ferroelectricity in undoped hafnium oxide

(2015) Patrick Polakowski et al.   APPLIED PHYSICS LETTERS

On the structural origins of ferroelectricity in HfO2 thin films

(2015) Xiahan Sang et al.   APPLIED PHYSICS LETTERS

The origin of ferroelectricity in Hf1−xZrxO2: A computational investigation and a surface energy model

(2015) R. Materlik et al.   JOURNAL OF APPLIED PHYSICS

Strongly Constrained and Appropriately Normed Semilocal Density Functional

(2015) Jianwei Sun et al.   PHYSICAL REVIEW LETTERS

Impact of different dopants on the switching properties of ferroelectric hafniumoxide

(2014) Uwe Schroeder et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

HfO2 based memory devices with rectifying capabilities

(2014) C. Quinteros et al.   JOURNAL OF APPLIED PHYSICS

Antiferroelectricity in thin-filmZrO2from first principles

(2014) Sebastian E. Reyes-Lillo et al.   PHYSICAL REVIEW B

Pathways towards ferroelectricity in hafnia

(2014) Tran Doan Huan et al.   PHYSICAL REVIEW B

Generalized mechanism of the resistance switching in binary-oxide-based resistive random-access memories

(2013) Katsumasa Kamiya et al.   PHYSICAL REVIEW B

High-performance bilayer flexible resistive random access memory based on low-temperature thermal atomic layer deposition

(2013) Run-Chen Fang et al.   Nanoscale Research Letters

First-principles simulation of oxygen diffusion in HfOx: Role in the resistive switching mechanism

(2012) S. Clima et al.   APPLIED PHYSICS LETTERS

New developments in evolutionary structure prediction algorithm USPEX

(2012) Andriy O. Lyakhov et al.   COMPUTER PHYSICS COMMUNICATIONS

Reliability Characteristics of Ferroelectric $ \hbox{Si:HfO}_{2}$ Thin Films for Memory Applications

(2012) Stefan Mueller et al.   IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY

How Evolutionary Crystal Structure Prediction Works—and Why

(2011) Artem R. Oganov et al.   ACCOUNTS OF CHEMICAL RESEARCH

Ferroelectricity in hafnium oxide thin films

(2011) T. S. Böscke et al.   APPLIED PHYSICS LETTERS

Atomic structure of conducting nanofilaments in TiO2 resistive switching memory

(2010) Deok-Hwang Kwon et al.   Nature Nanotechnology

Texture, Twinning, and Metastable “Tetragonal” Phase in Ultrathin Films of HfO[sub 2] on a Si Substrate

(2009) I. MacLaren et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Segregation of oxygen vacancy at metal-HfO2 interfaces

(2008) Eunae Cho et al.   APPLIED PHYSICS LETTERS