Role of Oxygen Vacancies at the TiO 2 /HfO 2 Interface in Flexible Oxide‐Based Resistive Switching Memory

Highly Flexible Resistive Switching Memory Based on the Electronic Switching Mechanism in the Al/TiO2/Al/Polyimide Structure

(2018) Jinshi Zhao et al.   ACS Applied Materials & Interfaces

Recommended Methods to Study Resistive Switching Devices

(2018) Mario Lanza et al.   Advanced Electronic Materials

Improving Analog Switching in HfOx-Based Resistive Memory With a Thermal Enhanced Layer

(2017) Wei Wu et al.   IEEE ELECTRON DEVICE LETTERS

The current limit and self-rectification functionalities in the TiO2/HfO2 resistive switching material system

(2017) Jung Ho Yoon et al.   Nanoscale

Highly flexible resistive switching memory based on amorphous-nanocrystalline hafnium oxide films

(2017) Jie Shang et al.   Nanoscale

A high performance transparent resistive switching memory made from ZrO2/AlON bilayer structure

(2016) Tsung-Ling Tsai et al.   APPLIED PHYSICS LETTERS

Ultralow switching current in HfOx/ZnO bilayer with tunable switching power enabled by plasma treatment

(2016) Yunfeng Lai et al.   APPLIED PHYSICS LETTERS

Resistive switching characteristics of ZnO/a-TiO 2 bilayer film fabricated on PET/ITO transparent and flexible substrates

(2016) Hongxia Li et al.   MATERIALS RESEARCH BULLETIN

Improved performance of ITO/TiO 2 /HfO 2 /Pt random resistive accessory memory by nitrogen annealing treatment

(2016) Tengfei Deng et al.   MICROELECTRONICS RELIABILITY

A flexible organic resistance memory device for wearable biomedical applications

(2016) Yimao Cai et al.   NANOTECHNOLOGY

Enhanced resistive switching performance for bilayer HfO2/TiO2resistive random access memory

(2016) Cong Ye et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Reversible transition between bipolar and unipolar resistive switching in Cu2O/Ga2O3 binary oxide stacked layer

(2016) Y. S. Zhi et al.   AIP Advances

Metal-Organic Framework Nanofilm for Mechanically Flexible Information Storage Applications

(2015) Liang Pan et al.   ADVANCED FUNCTIONAL MATERIALS

High mechanical endurance RRAM based on amorphous gadolinium oxide for flexible nonvolatile memory application

(2015) Hongbin Zhao et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Thermal crosstalk in 3-dimensional RRAM crossbar array

(2015) Pengxiao Sun et al.   Scientific Reports

Direct Observation of Conversion Between Threshold Switching and Memory Switching Induced by Conductive Filament Morphology

(2014) Haitao Sun et al.   ADVANCED FUNCTIONAL MATERIALS

Switching mechanism of double forming process phenomenon in ZrOx/HfOy bilayer resistive switching memory structure with large endurance

(2014) Chun-Yang Huang et al.   APPLIED PHYSICS LETTERS

Improvement of Resistive Switching Uniformity for Al–Zn–Sn–O-Based Memory Device With Inserting HfO2 Layer

(2014) Po-Tsun Liu et al.   IEEE ELECTRON DEVICE LETTERS

Characterization of Oxygen Accumulation in Indium-Tin-Oxide for Resistance Random Access Memory

(2014)   IEEE ELECTRON DEVICE LETTERS

Study of conduction and switching mechanisms in Al/AlOx/WOx/W resistive switching memory for multilevel applications

(2013) Ye Zhang et al.   APPLIED PHYSICS LETTERS

HfOx bipolar resistive memory with robust endurance using ZrNx as buttom electrode

(2013) Qigang Zhou et al.   APPLIED SURFACE SCIENCE

Bipolar ${\rm Ni}/{\rm TiO}_{2}/{\rm HfO}_{2}/{\rm Ni}$ RRAM With Multilevel States and Self-Rectifying Characteristics

(2013) Chung-Wei Hsu et al.   IEEE ELECTRON DEVICE LETTERS

Endurance Degradation in Metal Oxide-Based Resistive Memory Induced by Oxygen Ion Loss Effect

(2013) Bing Chen et al.   IEEE ELECTRON DEVICE LETTERS

High-performance bilayer flexible resistive random access memory based on low-temperature thermal atomic layer deposition

(2013) Run-Chen Fang et al.   Nanoscale Research Letters

Metal–Oxide RRAM

(2012) H.-S. Philip Wong et al.   PROCEEDINGS OF THE IEEE

Collective Motion of Conducting Filaments in Pt/n-Type TiO2/p-Type NiO/Pt Stacked Resistance Switching Memory

(2011) Kyung Min Kim et al.   ADVANCED FUNCTIONAL MATERIALS

Transition of metallic and insulating Ti sub-oxides in bipolar resistive switching TiO x /TiO y frameworks due to oxygen vacancy drifts

(2011) Yoon Cheol Bae et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Conduction mechanism of TiN/HfOx/Pt resistive switching memory: A trap-assisted-tunneling model

(2011) Shimeng Yu et al.   APPLIED PHYSICS LETTERS

Effect of ZrOx/HfOx bilayer structure on switching uniformity and reliability in nonvolatile memory applications

(2010) Joonmyoung Lee et al.   APPLIED PHYSICS LETTERS

Asymmetric bipolar resistive switching in solution-processed Pt/TiO2/W devices

(2010) Kuyyadi P Biju et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Resistive Switching Characteristics of Sol–Gel Zinc Oxide Films for Flexible Memory Applications

(2009) Sungho Kim et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Highly durable and flexible memory based on resistance switching

(2009) Sungho Kim et al.   SOLID-STATE ELECTRONICS