Resistive switching study in HfO2 based resistive memories by conductive atomic force microscopy in vacuum

Influence of oxygen vacancies in ALD HfO 2-x thin films on non-volatile resistive switching phenomena with a Ti/HfO 2-x /Pt structure

(2018) Andrey Sergeevich Sokolov et al.   APPLIED SURFACE SCIENCE

Multimode resistive switching in nanoscale hafnium oxide stack as studied by atomic force microscopy

(2016) Y. Hou et al.   APPLIED PHYSICS LETTERS

Sub-10 nm low current resistive switching behavior in hafnium oxide stack

(2016) Y. Hou et al.   APPLIED PHYSICS LETTERS

Graphene-HfO2-based resistive RAM memories

(2016) Cédric Mannequin et al.   MICROELECTRONIC ENGINEERING

Analysis of quantum conductance, read disturb and switching statistics in HfO2 RRAM using conductive AFM

(2016) A. Ranjan et al.   MICROELECTRONICS RELIABILITY

Bipolar resistive switching from liquid helium to room temperature

(2015) S Blonkowski et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Overcoated diamond tips for nanometer-scale semiconductor device characterization

(2015) T. Hantschel et al.   MICROELECTRONIC ENGINEERING

Dual bipolar resistive switching in the sub-forming regime of HfO2 resistive switching devices

(2015) Shani Recher et al.   SOLID-STATE ELECTRONICS

Filament Geometry Induced Bipolar, Complementary and Unipolar Resistive Switching under the Same Set Current Compliance in Pt/SiOx/TiN

(2015) Dong-Hyeok Lim et al.   Scientific Reports

Scaling behaviors for resistive memory switching in NiO nanowire devices

(2014) Sung In Kim et al.   APPLIED PHYSICS LETTERS

Effect of current compliance and voltage sweep rate on the resistive switching of HfO2/ITO/Invar structure as measured by conductive atomic force microscopy

(2014) You-Lin Wu et al.   APPLIED PHYSICS LETTERS

Formation and disruption of conductive filaments in a HfO2/TiN structure

(2014) S Brivio et al.   NANOTECHNOLOGY

A Review on Resistive Switching in High-k Dielectrics: A Nanoscale Point of View Using Conductive Atomic Force Microscope

(2014) Mario Lanza   Materials

Nanometer-Scale ${\rm HfO}_{x}$ RRAM

(2013) Zhiping Zhang et al.   IEEE ELECTRON DEVICE LETTERS

The resistive switching in TiO2 films studied by conductive atomic force microscopy and Kelvin probe force microscopy

(2013) Yuanmin Du et al.   AIP Advances

Metal–Oxide RRAM

(2012) H.-S. Philip Wong et al.   PROCEEDINGS OF THE IEEE

Effect of non-lattice oxygen on ZrO2-based resistive switching memory

(2012) Chun-Chieh Lin et al.   Nanoscale Research Letters

A study of the switching mechanism and electrode material of fully CMOS compatible tungsten oxide ReRAM

(2011) W. C. Chien et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Evidence for compliance controlled oxygen vacancy and metal filament based resistive switching mechanisms in RRAM

(2011) Nagarajan Raghavan et al.   MICROELECTRONIC ENGINEERING

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

(2011) Myoung-Jae Lee et al.   NATURE MATERIALS

Resistive switching of HfO2-based Metal–Insulator–Metal diodes: Impact of the top electrode material

(2011) T. Bertaud et al.   THIN SOLID FILMS

Resistive switching in NiSi gate metal-oxide-semiconductor transistors

(2010) X. Li et al.   APPLIED PHYSICS LETTERS

Comprehensive modeling of resistive switching in the Al/TiOx/TiO2/Al heterostructure based on space-charge-limited conduction

(2010) Sungho Kim et al.   APPLIED PHYSICS LETTERS

In Situ Observation of Compliance-Current Overshoot and Its Effect on Resistive Switching

(2010) H.J. Wan et al.   IEEE ELECTRON DEVICE LETTERS

Bias polarity dependent local electrical conduction in resistive switching TiO2 thin films

(2010) Yong Cheol Shin et al.   Physica Status Solidi-Rapid Research Letters

Resistive Random Access Memory (ReRAM) Based on Metal Oxides

(2010) Hiroyuki Akinaga et al.   PROCEEDINGS OF THE IEEE

Function by defects at the atomic scale – New concepts for non-volatile memories

(2010) Rainer Waser et al.   SOLID-STATE ELECTRONICS

Impact of Electrode Materials on Resistive-Switching Memory Programming

(2009) U. Russo et al.   IEEE ELECTRON DEVICE LETTERS

Conductive diamond tips with sub-nanometer electrical resolution for characterization of nanoelectronics device structures

(2009) T. Hantschel et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Direct observation of conducting filaments on resistive switching of NiO thin films

(2008) J. Y. Son et al.   APPLIED PHYSICS LETTERS

Resistive switching in transition metal oxides

(2008) Akihito Sawa   Materials Today

Memristive switching mechanism for metal/oxide/metal nanodevices

(2008) J. Joshua Yang et al.   Nature Nanotechnology