First-principles simulation of oxygen diffusion in HfOx: Role in the resistive switching mechanism

Origin of the Ultra-nonlinear Switching Kinetics in Oxide-Based Resistive Switches

(2011) Stephan Menzel et al.   ADVANCED FUNCTIONAL MATERIALS

Engineering oxide resistive switching materials for memristive device application

(2011) Lifeng Liu et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Measurement of oxygen diffusion in nanometer scale HfO2 gate dielectric films

(2011) Sufi Zafar et al.   APPLIED PHYSICS LETTERS

Point defect chemistry in amorphousHfO2: Density functional theory calculations

(2010) C. Tang et al.   PHYSICAL REVIEW B

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Unified Physical Model of Bipolar Oxide-Based Resistive Switching Memory

(2009) Bin Gao et al.   IEEE ELECTRON DEVICE LETTERS

Ab initio molecular dynamics simulations of properties of a-Al2O3 /vacuum and a-ZrO2 /vacuum vs a-Al2O3∕Ge(100)(2×1) and a-ZrO2∕Ge(100)(2×1) interfaces

(2009) Evgueni A. Chagarov et al.   JOURNAL OF CHEMICAL PHYSICS

Accelerated molecular dynamics simulation of thin-film growth with the bond-boost method

(2009) Kristen A Fichthorn et al.   JOURNAL OF PHYSICS-CONDENSED MATTER