Impact of oxygen vacancies on monoclinic hafnium oxide and band alignment with semiconductors

Characterization of HfO2 Optical Coatings Deposited by MF Magnetron Sputtering

(2019) Artur Wiatrowski et al.   Coatings

Investigation on polarization characteristics of ferroelectric memories with thermally stable hafnium aluminum oxides

(2019) Tun-Jen Chang et al.   VACUUM

Endurance properties of silicon-doped hafnium oxide ferroelectric and antiferroelectric-like thin films: A comparative study and prediction

(2018) Xiaohua Liu et al.   ACTA MATERIALIA

HfO2/Ti Interface Mediated Conductive Filament Formation in RRAM: An Ab Initio Study

(2018) Boubacar Traore et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Al-, Y-, and La-doping effects favoring intrinsic and field induced ferroelectricity in HfO2: A first principles study

(2018) Robin Materlik et al.   JOURNAL OF APPLIED PHYSICS

Optical properties of oxygen vacancies in HfO2 thin films studied by absorption and luminescence spectroscopy

(2018) S. Papernov et al.   OPTICS EXPRESS

Effect of the film thickness on the crystal structure and ferroelectric properties of (Hf 0.5 Zr 0.5 )O 2 thin films deposited on various substrates

(2017) Takahisa Shiraishi et al.   MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

Assessing the forming temperature role on amorphous and polycrystalline HfO 2 -based 4 kbit RRAM arrays performance

(2017) E. Perez et al.   MICROELECTRONIC ENGINEERING

Structural, mechanical and thermodynamic properties of ZrO 2 polymorphs by first-principles calculation

(2017) Zuozhong Liang et al.   PHYSICA B-CONDENSED MATTER

Modification of various properties of HfO 2 thin films obtained by changing magnetron sputtering conditions

(2017) Michal Mazur et al.   SURFACE & COATINGS TECHNOLOGY

Ferroelectricity in Simple Binary Crystals

(2017) et al.   Crystals

Baking-temperature-modulated optical and electrical properties of HfTiO x gate dielectrics via sol-gel method

(2016) P. Jin et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Oxygen Vacancy in Hafnia as a Blue Luminescence Center and a Trap of Charge Carriers

(2016) Vladimir A. Gritsenko et al.   Journal of Physical Chemistry C

Competitive effects of oxygen vacancy formation and interfacial oxidation on an ultra-thin HfO2-based resistive switching memory: beyond filament and charge hopping models

(2016) Hisao Nakamura et al.   PHYSICAL CHEMISTRY CHEMICAL PHYSICS

Electronic properties of hafnium oxide: A contribution from defects and traps

(2016) Vladimir A. Gritsenko et al.   PHYSICS REPORTS-REVIEW SECTION OF PHYSICS LETTERS

First principles study of defects in high-k HfO2

(2016) Baozhu Wang et al.   SUPERLATTICES AND MICROSTRUCTURES

Ferroelectricity and Antiferroelectricity of Doped Thin HfO2-Based Films

(2015) Min Hyuk Park et al.   ADVANCED MATERIALS

Mechanical and thermodynamic properties of ZrO2 under high-pressure phase transition: A first-principles study

(2015) Wei Wang et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Evolutionary search for new high-kdielectric materials: methodology and applications to hafnia-based oxides

(2014) Qingfeng Zeng et al.   Acta Crystallographica Section C-Structural Chemistry

A study on structural, optical and hydrophobic properties of oblique angle sputter deposited HfO2 films

(2013) Ravish K. Jain et al.   APPLIED SURFACE SCIENCE

Interaction and electronic structures of oxygen divacancy in HfO2

(2012) Wei Zhang et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

Ab initiostudy of phase transition and dielectric constants of high-κHfO2as a function of Ge alloying

(2012) A. Debernardi   PHYSICAL REVIEW B

Optical properties of HfO2 thin films deposited by magnetron sputtering: From the visible to the far-infrared

(2012) T.J. Bright et al.   THIN SOLID FILMS

First-principles calculations of electronic and optical properties of Ti-doped monoclinic HfO2

(2011) Tingting Tan et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Development of hafnium based high-k materials—A review

(2011) J.H. Choi et al.   MATERIALS SCIENCE & ENGINEERING R-REPORTS

High-throughput electronic band structure calculations: Challenges and tools

(2010) Wahyu Setyawan et al.   COMPUTATIONAL MATERIALS SCIENCE

Complete band offset characterization of the HfO2/SiO2/Si stack using charge corrected x-ray photoelectron spectroscopy

(2010) E. Bersch et al.   JOURNAL OF APPLIED PHYSICS

Quasiparticle calculations of the electronic properties ofZrO2andHfO2polymorphs and their interface with Si

(2010) Myrta Grüning et al.   PHYSICAL REVIEW B

Size-dependent polymorphism in HfO2 nanotubes and nanoscale thin films

(2009) Michael Shandalov et al.   JOURNAL OF APPLIED PHYSICS

Cubic-to-tetragonal phase transition of HfO2 from computational study

(2007) R. Terki et al.   MATERIALS LETTERS