Intrinsic Defect Limit to the Growth of Orthorhombic HfO 2 and (Hf,Zr)O 2 with Strong Ferroelectricity: First‐Principles Insights

First principles investigation of charge transition levels in monoclinic, orthorhombic, tetragonal, and cubic crystallographic phases of HfO2

(2021) Md Nur K Alam et al.   JOURNAL OF APPLIED PHYSICS

Room-temperature deposition of ferroelectric HfO2-based films by the sputtering method

(2020) Takanori Mimura et al.   APPLIED PHYSICS LETTERS

ZrO2 Ferroelectric Field-Effect Transistors Enabled by the Switchable Oxygen Vacancy Dipoles

(2020) Huan Liu et al.   Nanoscale Research Letters

Low-temperature synthesis of tetragonal phase of hafnium oxide using polymer-blended nanofiber precursor

(2020) Ji-Won Jung et al.   APPLIED SURFACE SCIENCE

Ferroelectric HfO2 formation by annealing of a HfO2/Hf/HfO2/Si(100) stacked structure

(2019) Min Gee Kim et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Inherent Stochastic Learning in CMOS-Integrated HfO2 Arrays for Neuromorphic Computing

(2019) C. Wenger et al.   IEEE ELECTRON DEVICE LETTERS

Origin of Ferroelectric Phase in Undoped HfO 2 Films Deposited by Sputtering

(2019) Terence Mittmann et al.   Advanced Materials Interfaces

Spontaneous polarization enhancement in ferroelectric Hf0.5Zr0.5O2 using atomic oxygen defects engineering: An ab initio study

(2019) Wei Wei et al.   APPLIED PHYSICS LETTERS

The effects of oxygen vacancies on ferroelectric phase transition of HfO2-based thin film from first-principle

(2019) Y. Zhou et al.   COMPUTATIONAL MATERIALS SCIENCE

Origin of the Intrinsic Ferroelectricity of HfO2 from ab Initio Molecular Dynamics

(2019) P. Fan et al.   Journal of Physical Chemistry C

A Study of Endurance Issues in HfO2-Based Ferroelectric Field Effect Transistors: Charge Trapping and Trap Generation

(2018) Nanbo Gong et al.   IEEE ELECTRON DEVICE LETTERS

Electronic Structure of Oxygen Vacancies in the Orthorhombic Noncentrosymmetric Phase Hf0.5Zr0.5O2

(2018) T. V. Perevalov et al.   JETP LETTERS

Identification of oxide defects in semiconductor devices: A systematic approach linking DFT to rate equations and experimental evidence

(2018) W. Goes et al.   MICROELECTRONICS RELIABILITY

Implementation of Dopant-Free Hafnium Oxide Negative Capacitance Field-Effect Transistor

(2018) Chun-Hu Cheng et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Understanding the formation of the metastable ferroelectric phase in hafnia–zirconia solid solution thin films

(2017) Min Hyuk Park et al.   Nanoscale

Why Is FE–HfO2More Suitable Than PZT or SBT for Scaled Nonvolatile 1-T Memory Cell? A Retention Perspective

(2016) Nanbo Gong et al.   IEEE ELECTRON DEVICE LETTERS

First principles study of defects in high-k HfO2

(2016) Baozhu Wang et al.   SUPERLATTICES AND MICROSTRUCTURES

The demonstration of significant ferroelectricity in epitaxial Y-doped HfO2 film

(2016) Takao Shimizu et al.   Scientific Reports

Ferroelectricity and Antiferroelectricity of Doped Thin HfO2-Based Films

(2015) Min Hyuk Park et al.   ADVANCED MATERIALS

Ferroelectricity in undoped hafnium oxide

(2015) Patrick Polakowski et al.   APPLIED PHYSICS LETTERS

Identification of the ferroelectric switching process and dopant-dependent switching properties in orthorhombic HfO2: A first principles insight

(2014) S. Clima et al.   APPLIED PHYSICS LETTERS

The simulated vibrational spectra of HfO2 polymorphs

(2014) B Zhou et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

First-principles calculations for point defects in solids

(2014) Christoph Freysoldt et al.   REVIEWS OF MODERN PHYSICS

Classification of Lattice Defects in the Kesterite Cu2ZnSnS4and Cu2ZnSnSe4Earth-Abundant Solar Cell Absorbers

(2013) Shiyou Chen et al.   ADVANCED MATERIALS

Co-sputtering yttrium into hafnium oxide thin films to produce ferroelectric properties

(2012) T. Olsen et al.   APPLIED PHYSICS LETTERS

Ferroelectricity in Simple Binary ZrO2 and HfO2

(2012) Johannes Müller et al.   NANO LETTERS

Identification of the Nitrogen Split Interstitial(N−N)Nin GaN

(2012) H. J. von Bardeleben et al.   PHYSICAL REVIEW LETTERS

Ferroelectricity in hafnium oxide thin films

(2011) T. S. Böscke et al.   APPLIED PHYSICS LETTERS

Ferroelectric Zr0.5Hf0.5O2thin films for nonvolatile memory applications

(2011) J. Müller et al.   APPLIED PHYSICS LETTERS

Ferroelectricity in yttrium-doped hafnium oxide

(2011) J. Müller et al.   JOURNAL OF APPLIED PHYSICS

Carrier density and compensation in semiconductors with multiple dopants and multiple transition energy levels: Case of Cu impurities in CdTe

(2011) Jie Ma et al.   PHYSICAL REVIEW B

Revealing the role of defects in ferroelectric switching with atomic resolution

(2011) Peng Gao et al.   Nature Communications

First-principles study on doping and phase stability ofHfO2

(2008) Choong-Ki Lee et al.   PHYSICAL REVIEW B