Antiferroelectricity in thin-filmZrO2from first principles

Identification of the ferroelectric switching process and dopant-dependent switching properties in orthorhombic HfO2: A first principles insight

(2014) S. Clima et al.   APPLIED PHYSICS LETTERS

Evolution of phases and ferroelectric properties of thin Hf0.5Zr0.5O2 films according to the thickness and annealing temperature

(2013) Min Hyuk Park et al.   APPLIED PHYSICS LETTERS

Antiferroelectricity and ferroelectricity in epitaxially strained PbZrO3from first principles

(2013) Sebastian E. Reyes-Lillo et al.   PHYSICAL REVIEW B

OrthorhombicABCSemiconductors as Antiferroelectrics

(2013) Joseph W. Bennett et al.   PHYSICAL REVIEW LETTERS

Growth, dielectric properties, and memory device applications of ZrO2 thin films

(2013) Debashis Panda et al.   THIN SOLID FILMS

Incipient Ferroelectricity in Al-Doped HfO2 Thin Films

(2012) Stefan Mueller et al.   ADVANCED FUNCTIONAL MATERIALS

Ferroelectricity in Simple Binary ZrO2 and HfO2

(2012) Johannes Müller et al.   NANO LETTERS

Defect configuration and phase stability of cubic versus tetragonal yttria-stabilized zirconia

(2012) Hepeng Ding et al.   SOLID STATE IONICS

Ferroelectricity in Gd-Doped HfO2Thin Films

(2012) S. Mueller et al.   ECS Journal of Solid State Science and Technology

Phase transitions in ferroelectric silicon doped hafnium oxide

(2011) T. S. Böscke et al.   APPLIED PHYSICS LETTERS

Ferroelectricity in hafnium oxide thin films

(2011) T. S. Böscke et al.   APPLIED PHYSICS LETTERS

Ferroelectric Zr0.5Hf0.5O2thin films for nonvolatile memory applications

(2011) J. Müller et al.   APPLIED PHYSICS LETTERS

Ferroelectricity in yttrium-doped hafnium oxide

(2011) J. Müller et al.   JOURNAL OF APPLIED PHYSICS

The Antiferroelectric ↔ Ferroelectric Phase Transition in Lead-Containing and Lead-Free Perovskite Ceramics

(2011) Xiaoli Tan et al.   JOURNAL OF THE AMERICAN CERAMIC SOCIETY

Development of hafnium based high-k materials—A review

(2011) J.H. Choi et al.   MATERIALS SCIENCE & ENGINEERING R-REPORTS

Capacitors with an Equivalent Oxide Thickness of

(2010) Seong Keun Kim et al.   ADVANCED FUNCTIONAL MATERIALS

High-Strain Lead-free Antiferroelectric Electrostrictors

(2009) Shan-Tao Zhang et al.   ADVANCED MATERIALS

ABINIT: First-principles approach to material and nanosystem properties

(2009) X. Gonze et al.   COMPUTER PHYSICS COMMUNICATIONS

High-k dielectrics for future generation memory devices (Invited Paper)

(2009) J.A. Kittl et al.   MICROELECTRONIC ENGINEERING

The effect of dopants on the dielectric constant of HfO[sub 2] and ZrO[sub 2] from first principles

(2008) Dominik Fischer et al.   APPLIED PHYSICS LETTERS

Atomic Layer Deposition of ZrO2 Thin Films with High Dielectric Constant on TiN Substrates

(2008) Seong Keun Kim et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Stabilization of the high-k tetragonal phase in HfO2: The influence of dopants and temperature from ab initio simulations

(2008) Dominik Fischer et al.   JOURNAL OF APPLIED PHYSICS

Structural and electrical properties of the 2Bi2O3·3ZrO2 system

(2008) Čedomir Jovalekić et al.   JOURNAL OF SOLID STATE CHEMISTRY