Generalized mechanism of the resistance switching in binary-oxide-based resistive random-access memories
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Title
Generalized mechanism of the resistance switching in binary-oxide-based resistive random-access memories
Authors
Keywords
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Journal
PHYSICAL REVIEW B
Volume 87, Issue 15, Pages -
Publisher
American Physical Society (APS)
Online
2013-04-09
DOI
10.1103/physrevb.87.155201
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- (2011) Keita Yamguchi et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- The role of oxygen-related defects and hydrogen impurities in HfO2 and ZrO2
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- Oxygen migration at Pt/HfO2/Pt interface under bias operation
- (2010) T. Nagata et al. APPLIED PHYSICS LETTERS
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- (2010) Pang-Shiu Chen et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Atomic structure of conducting nanofilaments in TiO2 resistive switching memory
- (2010) Deok-Hwang Kwon et al. Nature Nanotechnology
- Resistive Random Access Memory (ReRAM) Based on Metal Oxides
- (2010) Hiroyuki Akinaga et al. PROCEEDINGS OF THE IEEE
- An Emergent Change of Phase for Electronics
- (2010) H. Takagi et al. SCIENCE
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- (2009) Masamitsu Haemori et al. Applied Physics Express
- Pulse-induced low-power resistive switching in HfO2 metal-insulator-metal diodes for nonvolatile memory applications
- (2009) Ch. Walczyk et al. JOURNAL OF APPLIED PHYSICS
- Electrical evidence of unstable anodic interface in Ru∕HfOx∕TiN unipolar resistive memory
- (2008) Heng Yuan Lee et al. APPLIED PHYSICS LETTERS
- Resistive switching in transition metal oxides
- (2008) Akihito Sawa Materials Today
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