Resistive Switching in HfO2–x/La0.67Sr0.33MnO3 Heterostructures: An Intriguing Case of Low H-Field Susceptibility of an E-Field Controlled Active Interface

Annealing Effect on the Performance of Copper Oxide Resistive Memory Devices

(2020) Chih-Chieh Hsu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Resistive switching materials for information processing

(2020) Zhongrui Wang et al.   Nature Reviews Materials

Blocking of Conducting Channels Widens Window for Ferroelectric Resistive Switching in Interface‐Engineered Hf 0.5 Zr 0.5 O 2 Tunnel Devices

(2020) Milena Cervo Sulzbach et al.   ADVANCED FUNCTIONAL MATERIALS

Nonvolatile Multistates Memories for High-Density Data Storage

(2020) Qiang Cao et al.   ACS Applied Materials & Interfaces

Low-Power Resistive Switching Characteristic in HfO2/TiOx Bi-Layer Resistive Random-Access Memory

(2019) Xiangxiang Ding et al.   Nanoscale Research Letters

One transistor-two resistive RAM (1T2R) device for realizing bidirectional and analog neuromorphic synapse device

(2019) Seokjae Lim et al.   NANOTECHNOLOGY

Effect of crystalline state on conductive filaments forming process in resistive switching memory devices

(2019) Tao Guo et al.   Materials Today Communications

The effects of oxygen vacancies on ferroelectric phase transition of HfO2-based thin film from first-principle

(2019) Y. Zhou et al.   COMPUTATIONAL MATERIALS SCIENCE

Forming‐Free Grain Boundary Engineered Hafnium Oxide Resistive Random Access Memory Devices

(2019) Stefan Petzold et al.   Advanced Electronic Materials

Recent advances and applications of machine learning in solid-state materials science

(2019) Jonathan Schmidt et al.   npj Computational Materials

Filament Growth and Resistive Switching in Hafnium Oxide Memristive Devices

(2018) Sven Dirkmann et al.   ACS Applied Materials & Interfaces

Improvement of durability and switching speed by incorporating nanocrystals in the HfOx based resistive random access memory devices

(2018) Quantan Wu et al.   APPLIED PHYSICS LETTERS

Resistive switching study in HfO2 based resistive memories by conductive atomic force microscopy in vacuum

(2018) A. K. Singh et al.   JOURNAL OF APPLIED PHYSICS

Conduction mechanisms, dynamics and stability in ReRAMs

(2018) Chen Wang et al.   MICROELECTRONIC ENGINEERING

Solution-processed resistive switching memory devices based on hybrid organic–inorganic materials and composites

(2018) Yingying Shan et al.   PHYSICAL CHEMISTRY CHEMICAL PHYSICS

Epitaxial Ferroelectric Hf 0.5 Zr 0.5 O 2 Thin Films and Their Implementations in Memristors for Brain‐Inspired Computing

(2018) Herng Yau Yoong et al.   ADVANCED FUNCTIONAL MATERIALS

A rhombohedral ferroelectric phase in epitaxially strained Hf0.5Zr0.5O2 thin films

(2018) Yingfen Wei et al.   NATURE MATERIALS

Highly flexible resistive switching memory based on amorphous-nanocrystalline hafnium oxide films

(2017) Jie Shang et al.   Nanoscale

Remote control of resistive switching in TiO2 based resistive random access memory device

(2017) Dwipak Prasad Sahu et al.   Scientific Reports

Filament-Induced Anisotropic Oxygen Vacancy Diffusion and Charge Trapping Effects in Hafnium Oxide RRAM

(2016) Dan Duncan et al.   IEEE ELECTRON DEVICE LETTERS

Resistive switching phenomena of HfO2 films grown by MOCVD for resistive switching memory devices

(2016) Hee-Dong Kim et al.   JOURNAL OF THE KOREAN PHYSICAL SOCIETY

Resistance random access memory

(2016) Ting-Chang Chang et al.   Materials Today

Resistive switching memories based on metal oxides: mechanisms, reliability and scaling

(2016) Daniele Ielmini   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Carrier tuning the metal-insulator transition of epitaxial La0.67Sr0.33MnO3 thin film on Nb doped SrTiO3 substrate

(2016) J. M. Zhan et al.   AIP Advances

Unconventional resistive switching behavior in ferroelectric tunnel junctions

(2015) H. J. Mao et al.   PHYSICAL CHEMISTRY CHEMICAL PHYSICS

Band Structure Analysis of La0.7Sr0.3MnO3Perovskite Manganite Using a Synchrotron

(2015) Hong-Sub Lee et al.   Advances in Condensed Matter Physics

Novel high-κ dielectrics for next-generation electronic devices screened by automated ab initio calculations

(2015) Kanghoon Yim et al.   NPG Asia Materials

Resistive switching phenomena: A review of statistical physics approaches

(2015) Jae Sung Lee et al.   Applied Physics Reviews

Towards forming-free resistive switching in oxygen engineered HfO2−x

(2014) S. U. Sharath et al.   APPLIED PHYSICS LETTERS

Resistive Switching Modification by Ultraviolet Illumination in Transparent Electrode Resistive Random Access Memory

(2014)   IEEE ELECTRON DEVICE LETTERS

HfO2 based memory devices with rectifying capabilities

(2014) C. Quinteros et al.   JOURNAL OF APPLIED PHYSICS

Effect of crystallinity on the resistive switching behavior of HfAlO x films

(2014) In-Su Mok et al.   JOURNAL OF THE KOREAN PHYSICAL SOCIETY

Recent progress in resistive random access memories: Materials, switching mechanisms, and performance

(2014) F. Pan et al.   MATERIALS SCIENCE & ENGINEERING R-REPORTS

Cost-Effective, Transfer-Free, Flexible Resistive Random Access Memory Using Laser-Scribed Reduced Graphene Oxide Patterning Technology

(2014) He Tian et al.   NANO LETTERS

Resistive switching and its suppression in Pt/Nb:SrTiO3 junctions

(2014) Evgeny Mikheev et al.   Nature Communications

Evolution of phases and ferroelectric properties of thin Hf0.5Zr0.5O2 films according to the thickness and annealing temperature

(2013) Min Hyuk Park et al.   APPLIED PHYSICS LETTERS

Electric field-induced magnetic changes in La0.7Sr0.3MnO3 thin film using electric field-induced resistance phenomenon

(2013) T. Yokota et al.   APPLIED PHYSICS LETTERS

Pulsed laser deposition of La1−xSrxMnO3: thin-film properties and spintronic applications

(2013) Sayani Majumdar et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Generalized mechanism of the resistance switching in binary-oxide-based resistive random-access memories

(2013) Katsumasa Kamiya et al.   PHYSICAL REVIEW B

Microstructure and thermal oxidation behavior of yttria-stabilized hafnia nanostructured coatings deposited on alumina

(2013) E.J. Rubio et al.   SURFACE & COATINGS TECHNOLOGY

High sensitivity low field magnetically gated resistive switching in CoFe2O4/La0.66Sr0.34MnO3 heterostructure

(2012) Vishal Thakare et al.   APPLIED PHYSICS LETTERS

Electric modulation of magnetization at the BaTiO3/La0.67Sr0.33MnO3 interfaces

(2012) H. Lu et al.   APPLIED PHYSICS LETTERS

Resistive switching characteristics of solution-deposited Gd, Dy, and Ce-doped ZrO2 films

(2012) Myung Soo Lee et al.   APPLIED PHYSICS LETTERS

Controlled oxygen vacancy induced p-type conductivity in HfO2−x thin films

(2011) Erwin Hildebrandt et al.   APPLIED PHYSICS LETTERS

The influence of crystallinity on the resistive switching behavior of TiO2

(2011) H. Mähne et al.   MICROELECTRONIC ENGINEERING

Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook

(2011) Kyung Min Kim et al.   NANOTECHNOLOGY

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

(2011) Myoung-Jae Lee et al.   NATURE MATERIALS

Electrical characterization of organic resistive memory with interfacial oxide layers formed by O2 plasma treatment

(2010) Byungjin Cho et al.   APPLIED PHYSICS LETTERS

Effect of ZrOx/HfOx bilayer structure on switching uniformity and reliability in nonvolatile memory applications

(2010) Joonmyoung Lee et al.   APPLIED PHYSICS LETTERS

Atomic structure of conducting nanofilaments in TiO2 resistive switching memory

(2010) Deok-Hwang Kwon et al.   Nature Nanotechnology

The mechanism of electroforming of metal oxide memristive switches

(2009) J Joshua Yang et al.   NANOTECHNOLOGY

Resistive switching in transition metal oxides

(2008) Akihito Sawa   Materials Today