Interface chemistry of pristine TiN/La: Hf 0.5 Zr 0.5 O 2 capacitors

Physical chemistry of the TiN/Hf0.5Zr0.5O2 interface

(2020) W. Hamouda et al.   JOURNAL OF APPLIED PHYSICS

Mitigating wakeup effect and improving endurance of ferroelectric HfO2-ZrO2 thin films by careful La-doping

(2019) Maxim G. Kozodaev et al.   JOURNAL OF APPLIED PHYSICS

Fully Stretchable Electromagnet Using Magnetoactive PDMS Sponges and Metallic Coils

(2019) Jong In Kim et al.   JOM

Origin of Ferroelectric Phase in Undoped HfO 2 Films Deposited by Sputtering

(2019) Terence Mittmann et al.   Advanced Materials Interfaces

Bulk Depolarization Fields as a Major Contributor to the Ferroelectric Reliability Performance in Lanthanum Doped Hf 0.5 Zr 0.5 O 2 Capacitors

(2019) Furqan Mehmood et al.   Advanced Materials Interfaces

Resistive switching in a LaMnO3 + δ/TiN memory cell investigated by operando hard X-ray photoelectron spectroscopy

(2019) Benjamin Meunier et al.   JOURNAL OF APPLIED PHYSICS

Improved Ferroelectric Switching Endurance of La-Doped Hf0.5Zr0.5O2 Thin Films

(2018) Anna G. Chernikova et al.   ACS Applied Materials & Interfaces

Lanthanum-Doped Hafnium Oxide: A Robust Ferroelectric Material

(2018) Uwe Schroeder et al.   INORGANIC CHEMISTRY

Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistors

(2018) Thomas Mikolajick et al.   MRS BULLETIN

Analysis of buried interfaces in multilayer device structures with hard XPS (HAXPES) using a CrKα source

(2018) O. Renault et al.   SURFACE AND INTERFACE ANALYSIS

Review and perspective on ferroelectric HfO2-based thin films for memory applications

(2018) Min Hyuk Park et al.   MRS Communications

A rhombohedral ferroelectric phase in epitaxially strained Hf0.5Zr0.5O2 thin films

(2018) Yingfen Wei et al.   NATURE MATERIALS

Chemistry of resistivity changes in TiTe/Al2O3 conductive-bridge memories

(2018) M. Kazar Mendes et al.   Scientific Reports

Identification of the nature of traps involved in the field cycling of Hf0.5Zr0.5O2-based ferroelectric thin films

(2018) Damir R. Islamov et al.   ACTA MATERIALIA

Re-distribution of oxygen at the interface between γ-Al2O3 and TiN

(2017) E. O. Filatova et al.   Scientific Reports

Si Doped Hafnium Oxide-A “Fragile” Ferroelectric System

(2017) Claudia Richter et al.   Advanced Electronic Materials

Scaling Effects in Perovskite Ferroelectrics: Fundamental Limits and Process-Structure-Property Relations

(2016) Jon F. Ihlefeld et al.   JOURNAL OF THE AMERICAN CERAMIC SOCIETY

The Effect of Acceptor and Donor Doping on Oxygen Vacancy Concentrations in Lead Zirconate Titanate (PZT)

(2016) Christoph Slouka et al.   Materials

Origin of traps and charge transport mechanism in hafnia

(2014) D. R. Islamov et al.   APPLIED PHYSICS LETTERS

Band alignment at memristive metal-oxide interfaces investigated by hard x-ray photoemission spectroscopy

(2014) C. Lenser et al.   PHYSICAL REVIEW B

Resistive switching effect in HfxAl1−xOy with a graded Al depth profile studied by hard X-ray photoelectron spectroscopy

(2014) Yu.А. Matveyev et al.   THIN SOLID FILMS

Effect of dopants on ferroelectric and piezoelectric properties of lead zirconate titanate thin films on Si substrates

(2013) Minh D. Nguyen et al.   CERAMICS INTERNATIONAL

Ferroelectricity in hafnium oxide thin films

(2011) T. S. Böscke et al.   APPLIED PHYSICS LETTERS

Atomic structure of conducting nanofilaments in TiO2 resistive switching memory

(2010) Deok-Hwang Kwon et al.   Nature Nanotechnology

Calculations of electron inelastic mean free paths. IX. Data for 41 elemental solids over the 50 eV to 30 keV range

(2010) S. Tanuma et al.   SURFACE AND INTERFACE ANALYSIS

Reliability of La-Doped Hf-Based Dielectrics nMOSFETs

(2009) Chang Yong Kang et al.   IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY