III-nitride nanostructures: Emerging applications for Micro-LEDs, ultraviolet photonics, quantum optoelectronics, and artificial photosynthesis

N-polar InGaN/GaN nanowires: overcoming the efficiency cliff of red-emitting micro-LEDs

(2022) A. Pandey et al.   Photonics Research

High efficiency blue InGaN microcavity light-emitting diode with a 205 nm ultra-short cavity

(2021) Joonho Back et al.   APPLIED PHYSICS LETTERS

Development of a photoelectrochemically self-improving Si/GaN photocathode for efficient and durable H2 production

(2021) Guosong Zeng et al.   NATURE MATERIALS

Electron overflow of AlGaN deep ultraviolet light emitting diodes

(2021) A. Pandey et al.   APPLIED PHYSICS LETTERS

CuS-Decorated GaN Nanowires on Silicon Photocathodes for Converting CO2 Mixture Gas to HCOOH

(2021) Wan Jae Dong et al.   JOURNAL OF THE AMERICAN CHEMICAL SOCIETY

High efficiency InGaN nanowire tunnel junction green micro-LEDs

(2021) Xianhe Liu et al.   APPLIED PHYSICS LETTERS

Surface Recombinations in III-Nitride Micro-LEDs Probed by Photon-Correlation Cathodoluminescence

(2021) Sylvain Finot et al.   ACS Photonics

InGaN-Based microLED Devices Approaching 1% EQE with Red 609 nm Electroluminescence on Semi-Relaxed Substrates

(2021) Ryan C. White et al.   Crystals

N-polar InGaN nanowires: breaking the efficiency bottleneck of nano and micro LEDs

(2021) Xianhe Liu et al.   Photonics Research

Titanium Carbide MXene Nucleation Layer for Epitaxial Growth of High-Quality GaN Nanowires on Amorphous Substrates

(2020) Aditya Prabaswara et al.   ACS Nano

Monolayer GaN excitonic deep ultraviolet light emitting diodes

(2020) Y. Wu et al.   APPLIED PHYSICS LETTERS

Comparison of size-dependent characteristics of blue and green InGaN microLEDs down to 1 μm in diameter

(2020) Jordan M. Smith et al.   APPLIED PHYSICS LETTERS

Improved performance of AlGaInP red micro-light-emitting diodes with sidewall treatments

(2020) Matthew S. Wong et al.   OPTICS EXPRESS

Highly efficient binary copper−iron catalyst for photoelectrochemical carbon dioxide reduction toward methane

(2020) Baowen Zhou et al.   PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA

High-efficiency AlGaN/GaN/AlGaN tunnel junction ultraviolet light-emitting diodes

(2020) A. Pandey et al.   Photonics Research

An electrically pumped surface-emitting semiconductor green laser

(2020) Yong-Ho Ra et al.   Science Advances

560 nm InGaN micro-LEDs on Low-defect Density and Scalable (20-21) Semipolar GaN on Patterned Sapphire Substrates

(2020) Michel Khoury et al.   OPTICS EXPRESS

Micrometer scale InGaN green light emitting diodes with ultra-stable operation

(2020) Xianhe Liu et al.   APPLIED PHYSICS LETTERS

Revealing the importance of light extraction efficiency in InGaN/GaN microLEDs via chemical treatment and dielectric passivation

(2020) Ryan T. Ley et al.   APPLIED PHYSICS LETTERS

Color-tunable

(2020) Shubhra S. Pasayat et al.   APPLIED PHYSICS LETTERS

Annealing behaviors of vacancy-type defects in AlN deposited by radio-frequency sputtering and metalorganic vapor phase epitaxy studied using monoenergetic positron beams

(2020) Akira Uedono et al.   JOURNAL OF APPLIED PHYSICS

Controlling Defect Formation of Nanoscale AlN: Toward Efficient Current Conduction of Ultrawide‐Bandgap Semiconductors

(2020) Yuanpeng Wu et al.   Advanced Electronic Materials

Demonstration of ultra-small (0.2%) for mini-displays

(2020) Shubhra S. Pasayat et al.   Applied Physics Express

InGaN/Si Double-Junction Photocathode for Unassisted Solar Water Splitting

(2020) Srinivas Vanka et al.   ACS Energy Letters

Impact of the stacking sequence on the bandgap and luminescence properties of bulk, bilayer, and monolayer hexagonal boron nitride

(2019) K. A. Mengle et al.   APL Materials

III-nitride quantum dots as single photon emitters

(2019) Mark J Holmes et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Bright Luminescence from Indirect and Strongly Bound Excitons in h-BN

(2019) Léonard Schué et al.   PHYSICAL REVIEW LETTERS

An electrically injected AlGaN nanowire defect-free photonic crystal ultraviolet laser

(2019) B. H. Le et al.   OPTICS EXPRESS

UV LEDs based on p–i–n core–shell AlGaN/GaN nanowire heterostructures grown by N-polar selective area epitaxy

(2019) Matt D Brubaker et al.   NANOTECHNOLOGY

Direct Growth of Single Crystalline GaN Nanowires on Indium Tin Oxide-Coated Silica

(2019) Aditya Prabaswara et al.   Nanoscale Research Letters

Excitons in hexagonal boron nitride single-layer: a new platform for polaritonics in the ultraviolet

(2019) F. Ferreira et al.   JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS

Recent progress of tunnel junction-based ultra-violet light emitting diodes

(2019) Yuewei Zhang et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Impact of the surface recombination on InGaN/GaN-based blue micro-light emitting diodes

(2019) Jianquan Kou et al.   OPTICS EXPRESS

AlGaN nanocrystals: building blocks for efficient ultraviolet optoelectronics

(2019) Xianhe Liu et al.   Photonics Research

Single photon source based on an InGaN quantum dot in a site-controlled optical horn structure

(2019) Xiaoxiao Sun et al.   APPLIED PHYSICS LETTERS

Electron Tomography of Pencil-Shaped GaN/(In,Ga)N Core-Shell Nanowires

(2019) Lars Nicolai et al.   Nanoscale Research Letters

Direct band-gap crossover in epitaxial monolayer boron nitride

(2019) C. Elias et al.   Nature Communications

Top-down GaN nanowire transistors with nearly zero gate hysteresis for parallel vertical electronics

(2019) Muhammad Fahlesa Fatahilah et al.   Scientific Reports

Stable Unassisted Solar Water Splitting on Semiconductor Photocathodes Protected by Multifunctional GaN Nanostructures

(2019) Yongjie Wang et al.   ACS Energy Letters

Room-temperature stability of excitons and transverse-electric polarized deep-ultraviolet luminescence in atomically thin GaN quantum wells

(2019) Dylan Bayerl et al.   APPLIED PHYSICS LETTERS

Overcoming the current injection issue in the 310nm-band AlGaN UVB light emitting diode

(2019) Muhammad Ajmal Khan et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Study of efficient semipolar (11-22) InGaN green micro-light-emitting diodes on high-quality (11-22) GaN/sapphire template

(2019) Hongjian Li et al.   OPTICS EXPRESS

Multisite microLED optrode array for neural interfacing

(2019) Niall McAlinden et al.   Neurophotonics

A 271.8 nm deep-ultraviolet laser diode for room temperature operation

(2019) Ziyi Zhang et al.   Applied Physics Express

Effect of KOH passivation for top-down fabricated InGaN nanowire light emitting diodes

(2019) Matthew Hartensveld et al.   JOURNAL OF APPLIED PHYSICS

Deep Ultraviolet Luminescence Due to Extreme Confinement in Monolayer GaN/Al(Ga)N Nanowire and Planar Heterostructures

(2019) Anthony Aiello et al.   NANO LETTERS

Smart Wide‐Bandgap Omnidirectional Reflector as an Effective Hole‐Injection Electrode for Deep‐UV Light‐Emitting Diodes

(2019) Tae Ho Lee et al.   Advanced Optical Materials

Review—Progress in High Performance III-Nitride Micro-Light-Emitting Diodes

(2019) Matthew S. Wong et al.   ECS Journal of Solid State Science and Technology

Two-dimensional multicolor (RGBY) integrated nanocolumn micro-LEDs as a fundamental technology of micro-LED display

(2019) Katsumi Kishino et al.   Applied Physics Express

Beyond 53% internal quantum efficiency in a AlGaN quantum well at 326  nm UVA emission and single-peak operation of UVA LED

(2019) M. Ajmal Khan et al.   OPTICS LETTERS

Nanoscale Electronic Conditioning for Improvement of Nanowire Light-Emitting-Diode Efficiency

(2018) Brelon J. May et al.   ACS Nano

Nanoscale current uniformity and injection efficiency of nanowire light emitting diodes

(2018) Brelon J. May et al.   APPLIED PHYSICS LETTERS

Normally Off Vertical 3-D GaN Nanowire MOSFETs With Inverted ${p}$ -GaN Channel

(2018) Feng Yu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Molecular beam epitaxy and characterization of Mg-doped GaN epilayers grown on Si (0 0 1) substrate through controlled nanowire coalescence

(2018) Yuanpeng Wu et al.   JOURNAL OF CRYSTAL GROWTH

Photoelectrochemical CO2 Reduction into Syngas with the Metal/Oxide Interface

(2018) Sheng Chu et al.   JOURNAL OF THE AMERICAN CHEMICAL SOCIETY

Direct Growth of III-Nitride Nanowire-Based Yellow Light-Emitting Diode on Amorphous Quartz Using Thin Ti Interlayer

(2018) Aditya Prabaswara et al.   Nanoscale Research Letters

GaN-based vertical-cavity surface-emitting lasers with AlInN/GaN distributed Bragg reflectors

(2018) Tetsuya Takeuchi et al.   REPORTS ON PROGRESS IN PHYSICS

Colloquium : Excitons in atomically thin transition metal dichalcogenides

(2018) Gang Wang et al.   REVIEWS OF MODERN PHYSICS

Charge carrier transport properties of Mg-doped Al0.6Ga0.4N grown by molecular beam epitaxy

(2018) Xianhe Liu et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Low voltage operation of GaN vertical nanowire MOSFET

(2018) Dong-Hyeok Son et al.   SOLID-STATE ELECTRONICS

A photochemical diode artificial photosynthesis system for unassisted high efficiency overall pure water splitting

(2018) Faqrul A. Chowdhury et al.   Nature Communications

Carrier Dynamics and Electro-Optical Characterization of High-Performance GaN/InGaN Core-Shell Nanowire Light-Emitting Diodes

(2018) Mohsen Nami et al.   Scientific Reports

Direct Growth of III-Nitride Nanowire-Based Yellow Light-Emitting Diode on Amorphous Quartz Using Thin Ti Interlayer

(2018) Aditya Prabaswara et al.   Nanoscale Research Letters

Fundamentals, progress, and future directions of nitride-based semiconductors and their composites in two-dimensional limit: A first-principles perspective to recent synthesis

(2018) D. Kecik et al.   Applied Physics Reviews

Monolithic Photoelectrochemical Device for Direct Water Splitting with 19% Efficiency

(2018) Wen-Hui Cheng et al.   ACS Energy Letters

High Efficiency Si Photocathode Protected by Multifunctional GaN Nanostructures

(2018) Srinivas Vanka et al.   NANO LETTERS

Effect of growth temperature on the structural and optical properties of few-layer hexagonal boron nitride by molecular beam epitaxy

(2018) David Arto Laleyan et al.   OPTICS EXPRESS

Temperature Insensitive and Integrated Differential Pressure Sensor for Liquid Level Sensing Based on an Optical Fiber Fabry–Perot Interferometer

(2018) Tiegen Liu et al.   IEEE Photonics Journal

Gallium nitride nanowire as a linker of molybdenum sulfides and silicon for photoelectrocatalytic water splitting

(2018) Baowen Zhou et al.   Nature Communications

Excitons in few-layer hexagonal boron nitride: Davydov splitting and surface localization

(2018) Fulvio Paleari et al.   2D Materials

Mini-LED and Micro-LED: Promising Candidates for the Next Generation Display Technology

(2018) Tingzhu Wu et al.   Applied Sciences-Basel

Making of an Industry-Friendly Artificial Photosynthesis Device

(2018) Xiangjiu Guan et al.   ACS Energy Letters

Wide range doping control and defect characterization of GaN layers with various Mg concentrations

(2018)   JOURNAL OF APPLIED PHYSICS

Enhanced electro-optic performance of surface-treated nanowires: origin and mechanism of nanoscale current injection for reliable ultraviolet light-emitting diodes

(2018) Davide Priante et al.   Optical Materials Express

Reflectance of a reflective photonic crystal p-contact layer for improving the light-extraction efficiency of AlGaN-based deep-ultraviolet light-emitting diodes

(2018) Joosun Yun et al.   AIP Advances

Green Electroluminescence from Radial m-Plane InGaN Quantum Wells Grown on GaN Wire Sidewalls by Metal–Organic Vapor Phase Epitaxy

(2018) Akanksha Kapoor et al.   ACS Photonics

Molecular beam epitaxy and characterization of AlGaN nanowire ultraviolet light emitting diodes on Al coated Si (0 0 1) substrate

(2018) Yuanpeng Wu et al.   JOURNAL OF CRYSTAL GROWTH

Hall-effect measurements of metalorganic vapor-phase epitaxy-grown p-type homoepitaxial GaN layers with various Mg concentrations

(2017) Masahiro Horita et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Influence of size-reduction on the performances of GaN-based micro-LEDs for display application

(2017) François Olivier et al.   JOURNAL OF LUMINESCENCE

Electronic and Optical Properties of Two-Dimensional GaN from First-Principles

(2017) Nocona Sanders et al.   NANO LETTERS

An AlGaN Core–Shell Tunnel Junction Nanowire Light-Emitting Diode Operating in the Ultraviolet-C Band

(2017) S. M. Sadaf et al.   NANO LETTERS

Ultraclean Single Photon Emission from a GaN Quantum Dot

(2017) Munetaka Arita et al.   NANO LETTERS

Self-planarized quantum-disks-in-nanowires ultraviolet-B emitters utilizing pendeo-epitaxy

(2017) B. Janjua et al.   Nanoscale

GaN nanowire arrays with nonpolar sidewalls for vertically integrated field-effect transistors

(2017) Feng Yu et al.   NANOTECHNOLOGY

Droop-free AlxGa1-xN/AlyGa1-yN quantum-disks-in-nanowires ultraviolet LED emitting at 337 nm on metal/silicon substrates

(2017) Bilal Janjua et al.   OPTICS EXPRESS

Selective area epitaxy of AlGaN nanowire arrays across nearly the entire compositional range for deep ultraviolet photonics

(2017) Xianhe Liu et al.   OPTICS EXPRESS

Electronic and excitonic properties of two-dimensional and bulk InN crystals

(2017) Dan Liang et al.   RSC Advances

Emission of Linearly Polarized Single Photons from Quantum Dots Contained in Nonpolar, Semipolar, and Polar Sections of Pencil-Like InGaN/GaN Nanowires

(2017) Žarko Gačević et al.   ACS Photonics

Surface-Passivated AlGaN Nanowires for Enhanced Luminescence of Ultraviolet Light Emitting Diodes

(2017) Haiding Sun et al.   ACS Photonics

Direct solar-to-hydrogen conversion via inverted metamorphic multi-junction semiconductor architectures

(2017) James L. Young et al.   Nature Energy

Controlled Coalescence of AlGaN Nanowire Arrays: An Architecture for Nearly Dislocation-Free Planar Ultraviolet Photonic Device Applications

(2016) Binh H. Le et al.   ADVANCED MATERIALS

Atomic-Scale Origin of Long-Term Stability and High Performance ofp-GaN Nanowire Arrays for Photocatalytic Overall Pure Water Splitting

(2016) Md Golam Kibria et al.   ADVANCED MATERIALS

Tunable Syngas Production from CO2and H2O in an Aqueous Photoelectrochemical Cell

(2016) Sheng Chu et al.   ANGEWANDTE CHEMIE-INTERNATIONAL EDITION

Semipolar InGaN/GaN nanostructure light-emitting diodes onc-plane sapphire

(2016) Ashwin K. Rishinaramangalam et al.   Applied Physics Express

Site-controlled InGaN/GaN single-photon-emitting diode

(2016) Lei Zhang et al.   APPLIED PHYSICS LETTERS

A top-gate GaN nanowire metal–semiconductor field effect transistor with improved channel electrostatic control

(2016) Ž. Gačević et al.   APPLIED PHYSICS LETTERS

Design and demonstration of ultra-wide bandgap AlGaN tunnel junctions

(2016) Yuewei Zhang et al.   APPLIED PHYSICS LETTERS

GaN-based vertical-cavity surface emitting lasers with sub-milliamp threshold and small divergence angle

(2016) P. S. Yeh et al.   APPLIED PHYSICS LETTERS

Molecular beam epitaxy of single crystalline GaN nanowires on a flexible Ti foil

(2016) Gabriele Calabrese et al.   APPLIED PHYSICS LETTERS

An electrically pumped 239 nm AlGaN nanowire laser operating at room temperature

(2016) S. Zhao et al.   APPLIED PHYSICS LETTERS

Deep ultraviolet emission from ultra-thin GaN/AlN heterostructures

(2016) Dylan Bayerl et al.   APPLIED PHYSICS LETTERS

Nanowire LEDs grown directly on flexible metal foil

(2016) Brelon J. May et al.   APPLIED PHYSICS LETTERS

Vertical architecture for enhancement mode power transistors based on GaN nanowires

(2016) F. Yu et al.   APPLIED PHYSICS LETTERS

A Monolithically Integrated Gallium Nitride Nanowire/Silicon Solar Cell Photocathode for Selective Carbon Dioxide Reduction to Methane

(2016) Yichen Wang et al.   CHEMISTRY-A EUROPEAN JOURNAL

Full-Color Pixelated-Addressable Light Emitting Diode on Transparent Substrate (LEDoTS) Micro-Displays by CoB

(2016) Deng Peng et al.   Journal of Display Technology

Instability and Spontaneous Reconstruction of Few-Monolayer Thick GaN Graphitic Structures

(2016) A. V. Kolobov et al.   NANO LETTERS

Ultrafast, Polarized, Single-Photon Emission from m-Plane InGaN Quantum Dots on GaN Nanowires

(2016) Tim J. Puchtler et al.   NANO LETTERS

Lattice-Polarity-Driven Epitaxy of Hexagonal Semiconductor Nanowires

(2016) Ping Wang et al.   NANO LETTERS

Monolithically Integrated Metal/Semiconductor Tunnel Junction Nanowire Light-Emitting Diodes

(2016) S. M. Sadaf et al.   NANO LETTERS

Full-Color Single Nanowire Pixels for Projection Displays

(2016) Yong-Ho Ra et al.   NANO LETTERS

Facile Formation of High-Quality InGaN/GaN Quantum-Disks-in-Nanowires on Bulk-Metal Substrates for High-Power Light-Emitters

(2016) Chao Zhao et al.   NANO LETTERS

Droop-Free, Reliable, and High-Power InGaN/GaN Nanowire Light-Emitting Diodes for Monolithic Metal-Optoelectronics

(2016) Chao Zhao et al.   NANO LETTERS

Nanogenerators based on vertically aligned InN nanowires

(2016) Guocheng Liu et al.   Nanoscale

Two-dimensional gallium nitride realized via graphene encapsulation

(2016) Zakaria Y. Al Balushi et al.   NATURE MATERIALS

Solid-state single-photon emitters

(2016) Igor Aharonovich et al.   Nature Photonics

Photonics and optoelectronics of 2D semiconductor transition metal dichalcogenides

(2016) Kin Fai Mak et al.   Nature Photonics

Hexagonal boron nitride is an indirect bandgap semiconductor

(2016) G. Cassabois et al.   Nature Photonics

Milliwatt-class GaN-based blue vertical-cavity surface-emitting lasers fabricated by epitaxial lateral overgrowth

(2016) Tatsushi Hamaguchi et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Impact of surface recombination on efficiency of III-nitride light-emitting diodes

(2016) Kirill A. Bulashevich et al.   Physica Status Solidi-Rapid Research Letters

Topical Review: Development of overgrown semi-polar GaN for high efficiency green/yellow emission

(2016) T Wang   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Artificial photosynthesis using metal/nonmetal-nitride semiconductors: current status, prospects, and challenges

(2016) M. G. Kibria et al.   Journal of Materials Chemistry A

Quantum dot vertical-cavity surface-emitting lasers covering the ‘green gap’

(2016) Yang Mei et al.   Light-Science & Applications

Single Photons from a Hot Solid-State Emitter at 350 K

(2016) Mark J. Holmes et al.   ACS Photonics

True Yellow Light-Emitting Diodes as Phosphor for Tunable Color-Rendering Index Laser-Based White Light

(2016) Bilal Janjua et al.   ACS Photonics

Photochemical Carbon Dioxide Reduction on Mg-Doped Ga(In)N Nanowire Arrays under Visible Light Irradiation

(2016) B. AlOtaibi et al.   ACS Energy Letters

Direct evidence of single quantum dot emission from GaN islands formed at threading dislocations using nanoscale cathodoluminescence: A source of single photons in the ultraviolet

(2015) Gordon Schmidt et al.   APPLIED PHYSICS LETTERS

A 350-nm-band GaN/AlGaN multiple-quantum-well laser diode on bulk GaN

(2015) Yuta Aoki et al.   APPLIED PHYSICS LETTERS

Tunnel junction enhanced nanowire ultraviolet light emitting diodes

(2015) A. T. M. Golam Sarwar et al.   APPLIED PHYSICS LETTERS

Defect-engineered GaN:Mg nanowire arrays for overall water splitting under violet light

(2015) M. G. Kibria et al.   APPLIED PHYSICS LETTERS

An electrically injected AlGaN nanowire laser operating in the ultraviolet-C band

(2015) S. Zhao et al.   APPLIED PHYSICS LETTERS

Interband tunneling for hole injection in III-nitride ultraviolet emitters

(2015) Yuewei Zhang et al.   APPLIED PHYSICS LETTERS

Optical and electrical properties of Mg-doped AlN nanowires grown by molecular beam epitaxy

(2015) Ashfiqua Tahseen Connie et al.   APPLIED PHYSICS LETTERS

High hole concentration in p-type AlGaN by indium-surfactant-assisted Mg-delta doping

(2015) Yingda Chen et al.   APPLIED PHYSICS LETTERS

Monolithic integration of four-colour InGaN-based nanocolumn LEDs

(2015) K. Kishino et al.   ELECTRONICS LETTERS

Reduction of the Mg acceptor activation energy in GaN, AlN, Al0.83Ga0.17N and MgGaδ-doping (AlN)5/(GaN)1: the strain effect

(2015) Xin-He Jiang et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

GaN-based LED micro-displays for wearable applications

(2015) Zhaojun Liu et al.   MICROELECTRONIC ENGINEERING

Formation and Nature of InGaN Quantum Dots in GaN Nanowires

(2015) Saniya Deshpande et al.   NANO LETTERS

Alternating-Current InGaN/GaN Tunnel Junction Nanowire White-Light Emitting Diodes

(2015) S. M. Sadaf et al.   NANO LETTERS

Three-Dimensional Quantum Confinement of Charge Carriers in Self-Organized AlGaN Nanowires: A Viable Route to Electrically Injected Deep Ultraviolet Lasers

(2015) S. Zhao et al.   NANO LETTERS

Surface Emitting, High Efficiency Near-Vacuum Ultraviolet Light Source with Aluminum Nitride Nanowires Monolithically Grown on Silicon

(2015) S. Zhao et al.   NANO LETTERS

Ultralow-threshold electrically injected AlGaN nanowire ultraviolet lasers on Si operating at low temperature

(2015) K. H. Li et al.   Nature Nanotechnology

Optically pumped GaN vertical cavity surface emitting laser with high index-contrast nanoporous distributed Bragg reflector

(2015) Seung-Min Lee et al.   OPTICS EXPRESS

Spectral diffusion and its influence on the emission linewidths of site-controlled GaN nanowire quantum dots

(2015) M. Holmes et al.   PHYSICAL REVIEW B

Size-dependent line broadening in the emission spectra of single GaAs quantum dots: Impact of surface charge on spectral diffusion

(2015) Neul Ha et al.   PHYSICAL REVIEW B

Layer- and strain-dependent optoelectronic properties of hexagonal AlN

(2015) D. Kecik et al.   PHYSICAL REVIEW B

Self-aligned deterministic coupling of single quantum emitter to nanofocused plasmonic modes

(2015) Su-Hyun Gong et al.   PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA

III-Nitride nanowire optoelectronics

(2015) Songrui Zhao et al.   PROGRESS IN QUANTUM ELECTRONICS

Visible light-driven efficient overall water splitting using p-type metal-nitride nanowire arrays

(2015) M. G. Kibria et al.   Nature Communications

Photoinduced Water Oxidation at the Aqueous GaN (101̅0) Interface: Deprotonation Kinetics of the First Proton-Coupled Electron-Transfer Step

(2015) Mehmed Z. Ertem et al.   ACS Catalysis

Wafer-Level Artificial Photosynthesis for CO2 Reduction into CH4 and CO Using GaN Nanowires

(2015) Bandar AlOtaibi et al.   ACS Catalysis

Free and bound excitonic effects in Al0.5Ga0.5N/Al0.35Ga0.65N MQWs with different Si-doping levels in the well layers

(2015) Chenguang He et al.   Scientific Reports

Aluminum nitride nanowire light emitting diodes: Breaking the fundamental bottleneck of deep ultraviolet light sources

(2015) S. Zhao et al.   Scientific Reports

Engineering the Carrier Dynamics of InGaN Nanowire White Light-Emitting Diodes by Distributed p-AlGaN Electron Blocking Layers

(2015) Hieu Pham Trung Nguyen et al.   Scientific Reports

Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides

(2014) Deep Jariwala et al.   ACS Nano

The impact of trench defects in InGaN/GaN light emitting diodes and implications for the “green gap” problem

(2014) F. C.-P. Massabuau et al.   APPLIED PHYSICS LETTERS

Electrically injected near-infrared light emission from single InN nanowire p-i-n diode

(2014) Binh Huy Le et al.   APPLIED PHYSICS LETTERS

Morphology development of GaN nanowires using a pulsed-mode MOCVD growth technique

(2014) Byung Oh Jung et al.   CRYSTENGCOMM

Performance Characteristics of UV-C AlGaN-Based Lasers Grown on Sapphire and Bulk AlN Substrates

(2014) Martin Martens et al.   IEEE PHOTONICS TECHNOLOGY LETTERS

A 3-Gb/s Single-LED OFDM-Based Wireless VLC Link Using a Gallium Nitride $\mu{\rm LED}$

(2014) Dobroslav Tsonev et al.   IEEE PHOTONICS TECHNOLOGY LETTERS

Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes

(2014) Hideki Hirayama et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Effect of Mg doping on the structural and free-charge carrier properties of InN films

(2014) M.-Y. Xie et al.   JOURNAL OF APPLIED PHYSICS

Photoinduced Conversion of Methane into Benzene over GaN Nanowires

(2014) Lu Li et al.   JOURNAL OF THE AMERICAN CHEMICAL SOCIETY

Visible-Wavelength Polarized-Light Emission with Small-Diameter InN Nanowires

(2014) Dylan Bayerl et al.   NANO LETTERS

Room-Temperature Triggered Single Photon Emission from a III-Nitride Site-Controlled Nanowire Quantum Dot

(2014) Mark J. Holmes et al.   NANO LETTERS

Giant bandgap renormalization and excitonic effects in a monolayer transition metal dichalcogenide semiconductor

(2014) Miguel M. Ugeda et al.   NATURE MATERIALS

A silicon-based photocathode for water reduction with an epitaxial SrTiO3 protection layer and a nanostructured catalyst

(2014) Li Ji et al.   Nature Nanotechnology

Photonic crystals as topological high-Q resonators

(2014) R. Merlin et al.   OPTICS EXPRESS

Low defect large area semi-polar (112) GaN grown on patterned (113) silicon

(2014) Markus Pristovsek et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

Amorphous TiO2 coatings stabilize Si, GaAs, and GaP photoanodes for efficient water oxidation

(2014) S. Hu et al.   SCIENCE

Tuning the surface Fermi level on p-type gallium nitride nanowires for efficient overall water splitting

(2014) M. G. Kibria et al.   Nature Communications

Direct generation of linearly polarized photon emission with designated orientations from site-controlled InGaN quantum dots

(2014) Anders Lundskog et al.   Light-Science & Applications

High Mg effective incorporation in Al-rich AlxGa1 - xN by periodic repetition of ultimate V/III ratio conditions

(2014) Tongchang Zheng et al.   Nanoscale Research Letters

Monolithic Integration of InGaN-Based Nanocolumn Light-Emitting Diodes with Different Emission Colors

(2013) Katsumi Kishino et al.   Applied Physics Express

Green Semipolar (202̄1̄) InGaN Light-Emitting Diodes with Small Wavelength Shift and Narrow Spectral Linewidth

(2013) Yuji Zhao et al.   Applied Physics Express

High p-type conduction in high-Al content Mg-doped AlGaN

(2013) Toru Kinoshita et al.   APPLIED PHYSICS LETTERS

Near-infrared InN quantum dots on high-In composition InGaN

(2013) Paul E. D. Soto Rodriguez et al.   APPLIED PHYSICS LETTERS

Electronic structure of a single-layer InN quantum well in a GaN matrix

(2013) M. S. Miao et al.   APPLIED PHYSICS LETTERS

Photoluminescence properties of Mg-doped InN nanowires

(2013) Songrui Zhao et al.   APPLIED PHYSICS LETTERS

Two-dimensional excitons in three-dimensional hexagonal boron nitride

(2013) X. K. Cao et al.   APPLIED PHYSICS LETTERS

Deep-ultraviolet lasing at 243 nm from photo-pumped AlGaN/AlN heterostructure on AlN substrate

(2013) Zachary Lochner et al.   APPLIED PHYSICS LETTERS

Improved injection efficiency in 290 nm light emitting diodes with Al(Ga)N electron blocking heterostructure

(2013) T. Kolbe et al.   APPLIED PHYSICS LETTERS

Sub-250 nm light emission and optical gain in AlGaN materials

(2013) Emanuele Francesco Pecora et al.   JOURNAL OF APPLIED PHYSICS

Infrared to vacuum-ultraviolet ellipsometry and optical Hall-effect study of free-charge carrier parameters in Mg-doped InN

(2013) S. Schöche et al.   JOURNAL OF APPLIED PHYSICS

Photoelectrochemical Tandem Cells for Solar Water Splitting

(2013) Mathieu S. Prévot et al.   Journal of Physical Chemistry C

Using TiO2 as a Conductive Protective Layer for Photocathodic H2 Evolution

(2013) Brian Seger et al.   JOURNAL OF THE AMERICAN CHEMICAL SOCIETY

Coaxial InxGa1–xN/GaN Multiple Quantum Well Nanowire Arrays on Si(111) Substrate for High-Performance Light-Emitting Diodes

(2013) Yong-Ho Ra et al.   NANO LETTERS

p-Type InN Nanowires

(2013) S. Zhao et al.   NANO LETTERS

Mixed Polarity in Polarization-Induced p–n Junction Nanowire Light-Emitting Diodes

(2013) Santino D. Carnevale et al.   NANO LETTERS

Breaking the Carrier Injection Bottleneck of Phosphor-Free Nanowire White Light-Emitting Diodes

(2013) Hieu Pham Trung Nguyen et al.   NANO LETTERS

Growth, structural and optical properties of AlGaN nanowires in the whole composition range

(2013) A Pierret et al.   NANOTECHNOLOGY

Origin of the Variation of Exciton Binding Energy in Semiconductors

(2013) Marc Dvorak et al.   PHYSICAL REVIEW LETTERS

High-Performance Silicon Photoanodes Passivated with Ultrathin Nickel Films for Water Oxidation

(2013) M. J. Kenney et al.   SCIENCE

III-nitride semiconductors for intersubband optoelectronics: a review

(2013) M Beeler et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Electrically driven polarized single-photon emission from an InGaN quantum dot in a GaN nanowire

(2013) Saniya Deshpande et al.   Nature Communications

High-Power, Low-Efficiency-Droop Semipolar ($20\bar{2}\bar{1}$) Single-Quantum-Well Blue Light-Emitting Diodes

(2012) Chih-Chien Pan et al.   Applied Physics Express

Homoepitaxy and Photoluminescence Properties of (0001) AlN

(2012) Mitsuru Funato et al.   Applied Physics Express

384 nm laser diode grown on a (202¯1) semipolar relaxed AlGaN buffer layer

(2012) Daniel A. Haeger et al.   APPLIED PHYSICS LETTERS

Efficiency droop in AlGaInP and GaInN light-emitting diodes

(2012) Jong-In Shim et al.   APPLIED PHYSICS LETTERS

Suppression of electron overflow and efficiency droop in N-polar GaN green light emitting diodes

(2012) F. Akyol et al.   APPLIED PHYSICS LETTERS

Blue monolithic AlInN-based vertical cavity surface emitting laser diode on free-standing GaN substrate

(2012) Gatien Cosendey et al.   APPLIED PHYSICS LETTERS

Growth behavior of GaN epilayers on Si(111) grown by GaN nanowires assisted epitaxial lateral overgrowth

(2012) Bo-Ra Yeom et al.   CRYSTENGCOMM

A New Control Method of Interleaved Single-Stage Flyback AC–DC Converter for Outdoor LED Lighting Systems

(2012) SangCheol Moon et al.   IEEE TRANSACTIONS ON POWER ELECTRONICS

The stability of illuminated p-GaInP2 semiconductor photoelectrode

(2012) Heli Wang et al.   INTERNATIONAL JOURNAL OF HYDROGEN ENERGY

E-beam nano-patterning for the ordered growth of GaN/InGaN nanorods

(2012) Francesca Barbagini et al.   MICROELECTRONIC ENGINEERING

InGaN/GaN Multiple Quantum Wells Grown on Nonpolar Facets of Vertical GaN Nanorod Arrays

(2012) Ting-Wei Yeh et al.   NANO LETTERS

Si/InGaN Core/Shell Hierarchical Nanowire Arrays and their Photoelectrochemical Properties

(2012) Yun Jeong Hwang et al.   NANO LETTERS

Electrically driven single-photon source at room temperature in diamond

(2012) N. Mizuochi et al.   Nature Photonics

Origin of the significantly enhanced optical transitions in layered boron nitride

(2012) Bing Huang et al.   PHYSICAL REVIEW B

Hall and Seebeck measurement of ap-nlayer stack: Determining InN bulk hole transport properties in the presence of a strong surface electron accumulation layer

(2012) Oliver Bierwagen et al.   PHYSICAL REVIEW B

Giant Reduction of InN Surface Electron Accumulation: Compensation of Surface Donors by Mg Dopants

(2012) W. M. Linhart et al.   PHYSICAL REVIEW LETTERS

III-Nitride Optoelectronic Devices: From Ultraviolet Toward Terahertz

(2012) M Razeghi   IEEE Photonics Journal

Epitaxial Growth of InGaN Nanowire Arrays for Light Emitting Diodes

(2011) Christopher Hahn et al.   ACS Nano

Influence of threading dislocation density on early degradation in AlGaN/GaN high electron mobility transistors

(2011) M. Ťapajna et al.   APPLIED PHYSICS LETTERS

Direct measurement of the band gap and Fermi level position at InN(112¯0)

(2011) Ph. Ebert et al.   APPLIED PHYSICS LETTERS

Mg doped InN and confirmation of free holes in InN

(2011) K. Wang et al.   APPLIED PHYSICS LETTERS

Radiative defects in GaN nanocolumns: Correlation with growth conditions and sample morphology

(2011) P. Lefebvre et al.   APPLIED PHYSICS LETTERS

MOSFETs Made From GaN Nanowires With Fully Conformal Cylindrical Gates

(2011) Paul T. Blanchard et al.   IEEE TRANSACTIONS ON NANOTECHNOLOGY

Analysis of GaN Damage Induced by Cl$_{2}$/SiCl$_{4}$/Ar Plasma

(2011) Masaki Minami et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Electrical and optical properties of p-type InN

(2011) Marie A. Mayer et al.   JOURNAL OF APPLIED PHYSICS

GaN nanowire templates for the pendeoepitaxial coalescence overgrowth on Si(111) by molecular beam epitaxy

(2011) Pinar Dogan et al.   JOURNAL OF CRYSTAL GROWTH

Threading defect elimination in GaN nanowires

(2011) Stephen D. Hersee et al.   JOURNAL OF MATERIALS RESEARCH

M-Plane Core–Shell InGaN/GaN Multiple-Quantum-Wells on GaN Wires for Electroluminescent Devices

(2011) Robert Koester et al.   NANO LETTERS

Wafer-Level Photocatalytic Water Splitting on GaN Nanowire Arrays Grown by Molecular Beam Epitaxy

(2011) Defa Wang et al.   NANO LETTERS

Full-color InGaN/GaN dot-in-a-wire light emitting diodes on silicon

(2011) Hieu Pham Trung Nguyen et al.   NANOTECHNOLOGY

Selective-area catalyst-free MBE growth of GaN nanowires using a patterned oxide layer

(2011) T Schumann et al.   NANOTECHNOLOGY

First principles study of structural, vibrational and electronic properties of graphene-like MX2 (M=Mo, Nb, W, Ta; X=S, Se, Te) monolayers

(2011) Yi Ding et al.   PHYSICA B-CONDENSED MATTER

Study of thermoelectric properties of indium nitride nanowire

(2011) Hung-Hsun Huang et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

The current status of ultraviolet laser diodes

(2011) Harumasa Yoshida et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Sharp bound and free exciton lines from homoepitaxial AlN

(2011) Martin Feneberg et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Polarity of GaN nanowires grown by plasma-assisted molecular beam epitaxy on Si(111)

(2011) Karine Hestroffer et al.   PHYSICAL REVIEW B

Controlled Nucleation of GaN Nanowires Grown with Molecular Beam Epitaxy

(2010) Kris A. Bertness et al.   ADVANCED FUNCTIONAL MATERIALS

Marked Enhancement in the Efficiency of Deep-Ultraviolet AlGaN Light-Emitting Diodes by Using a Multiquantum-Barrier Electron Blocking Layer

(2010) Hideki Hirayama et al.   Applied Physics Express

Molecular beam epitaxy of N-polar InGaN

(2010) Digbijoy N. Nath et al.   APPLIED PHYSICS LETTERS

Surface, bulk, and interface electronic properties of nonpolar InN

(2010) W. M. Linhart et al.   APPLIED PHYSICS LETTERS

Probing the electron density in undoped, Si-doped, and Mg-doped InN nanowires by means of Raman scattering

(2010) R. Cuscó et al.   APPLIED PHYSICS LETTERS

Band bowing and band alignment in InGaN alloys

(2010) Poul Georg Moses et al.   APPLIED PHYSICS LETTERS

High efficiency green, yellow, and amber emission from InGaN/GaN dot-in-a-wire heterostructures on Si(111)

(2010) Y.-L. Chang et al.   APPLIED PHYSICS LETTERS

Surface 210 nm light emission from an AlN p–n junction light-emitting diode enhanced by A-plane growth orientation

(2010) Yoshitaka Taniyasu et al.   APPLIED PHYSICS LETTERS

Emission color control from blue to red with nanocolumn diameter of InGaN/GaN nanocolumn arrays grown on same substrate

(2010) Hiroto Sekiguchi et al.   APPLIED PHYSICS LETTERS

Optimization of inductively coupled plasma deep etching of GaN and etching damage analysis

(2010) Rongfu Qiu et al.   APPLIED SURFACE SCIENCE

InN p-i-n Nanowire Solar Cells on Si

(2010) Hieu Pham Trung Nguyen et al.   IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS

Size-dependent light output, spectral shift, and self-heating of 400 nm InGaN light-emitting diodes

(2010) Zheng Gong et al.   JOURNAL OF APPLIED PHYSICS

Hole transport and photoluminescence in Mg-doped InN

(2010) N. Miller et al.   JOURNAL OF APPLIED PHYSICS

Growth and characterization of Mg-doped AlGaN–AlN short-period superlattices for deep-UV optoelectronic devices

(2010) A.A. Allerman et al.   JOURNAL OF CRYSTAL GROWTH

Deep GaN etching by inductively coupled plasma and induced surface defects

(2010) J. Ladroue et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

Dislocation Filtering in GaN Nanostructures

(2010) Robert Colby et al.   NANO LETTERS

Emerging Photoluminescence in Monolayer MoS2

(2010) Andrea Splendiani et al.   NANO LETTERS

Continuous-flux MOVPE growth of position-controlled N-face GaN nanorods and embedded InGaN quantum wells

(2010) W Bergbauer et al.   NANOTECHNOLOGY

Enhanced light scattering of the forbidden longitudinal optical phonon mode studied by micro-Raman spectroscopy on single InN nanowires

(2010) E O Schäfer-Nolte et al.   NANOTECHNOLOGY

Mg-doped Al0.85Ga0.15N layers grown by hot-wall MOCVD with low resistivity at room temperature

(2010) A. Kakanakova-Georgieva et al.   Physica Status Solidi-Rapid Research Letters

High-excitation and high-resolution photoluminescence spectra of bulk AlN

(2010) Martin Feneberg et al.   PHYSICAL REVIEW B

Mg doping and its effect on the semipolar GaN(112¯2) growth kinetics

(2009) L. Lahourcade et al.   APPLIED PHYSICS LETTERS

Photoluminescence studies of impurity transitions in Mg-doped AlGaN alloys

(2009) M. L. Nakarmi et al.   APPLIED PHYSICS LETTERS

Effects of Threading Dislocations on AlGaN/GaN High-Electron Mobility Transistors

(2009) Fabio Alessio Marino et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Deep-Ultraviolet Light-Emitting Diodes

(2009) Michael S. Shur et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

A growth diagram for plasma-assisted molecular beam epitaxy of GaN nanocolumns on Si(111)

(2009) S. Fernández-Garrido et al.   JOURNAL OF APPLIED PHYSICS

When group-III nitrides go infrared: New properties and perspectives

(2009) Junqiao Wu   JOURNAL OF APPLIED PHYSICS

Overgrowth of GaN on Be-doped coalesced GaN nanocolumn layer by rf-plasma-assisted molecular-beam epitaxy—Formation of high-quality GaN microcolumns

(2009) Kei Kato et al.   JOURNAL OF CRYSTAL GROWTH

Molecular beam epitaxial growth and characterization of non-tapered InN nanowires on Si(111)

(2009) Yi-Lu Chang et al.   NANOTECHNOLOGY

Prospects for LED lighting

(2009) Siddha Pimputkar et al.   Nature Photonics

AlGaN-based laser diodes for the short-wavelength ultraviolet region

(2009) Harumasa Yoshida et al.   NEW JOURNAL OF PHYSICS

222-282 nm AlGaN and InAlGaN-based deep-UV LEDs fabricated on high-quality AlN on sapphire

(2009) Hideki Hirayama et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Photoluminescence dynamics of AlGaN quantum wells with built-in electric fields and localized states

(2009) J. Mickevičius et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Infrared analysis of hole properties of Mg-doped p-type InN films

(2008) Masayuki Fujiwara et al.   APPLIED PHYSICS LETTERS

Terahertz emission from silicon and magnesium doped indium nitride

(2008) Ingrid Wilke et al.   APPLIED PHYSICS LETTERS

Demonstration of an ultraviolet 336 nm AlGaN multiple-quantum-well laser diode

(2008) Harumasa Yoshida et al.   APPLIED PHYSICS LETTERS

Selective-area growth of GaN nanocolumns on titanium-mask-patterned silicon (111) substrates by RF-plasma-assisted molecular-beam epitaxy

(2008) K. Kishino et al.   ELECTRONICS LETTERS

MESFETs Made From Individual GaN Nanowires

(2008) P.T. Blanchard et al.   IEEE TRANSACTIONS ON NANOTECHNOLOGY

On the mechanisms of spontaneous growth of III-nitride nanocolumns by plasma-assisted molecular beam epitaxy

(2008) Jelena Ristić et al.   JOURNAL OF CRYSTAL GROWTH

Fabrication and characterization of novel monolayer InN quantum wells in a GaN matrix

(2008) A. Yoshikawa et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B

Ultraviolet light-emitting diodes based on group three nitrides

(2008) Asif Khan et al.   Nature Photonics

Modeling the radiation pattern of LEDs

(2008) Ivan Moreno et al.   OPTICS EXPRESS

Ultraviolet GaN-based nanocolumn light-emitting diodes grown on n-(111) Si substrates by rf-plasma-assisted molecular beam epitaxy

(2008) Hiroto Sekiguchi et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Absence of Fermi-Level Pinning at Cleaved Nonpolar InN Surfaces

(2008) Chung-Lin Wu et al.   PHYSICAL REVIEW LETTERS

GaN Photonic-Crystal Surface-Emitting Laser at Blue-Violet Wavelengths

(2007) H. Matsubara et al.   SCIENCE