Electron overflow of AlGaN deep ultraviolet light emitting diodes

Deep ultraviolet monolayer GaN/AlN disk-in-nanowire array photodiode on silicon

(2020) Anthony Aiello et al.   APPLIED PHYSICS LETTERS

High-efficiency AlGaN/GaN/AlGaN tunnel junction ultraviolet light-emitting diodes

(2020) A. Pandey et al.   Photonics Research

On the Impact of Electron Leakage on the Efficiency Droop for AlGaN Based Deep Ultraviolet Light Emitting Diodes

(2020) Chunshuang Chu et al.   IEEE Photonics Journal

Far-UVC light (222 nm) efficiently and safely inactivates airborne human coronaviruses

(2020) Manuela Buonanno et al.   Scientific Reports

Origin of carrier localization in AlGaN-based quantum well structures and implications for efficiency droop

(2020) Christian Frankerl et al.   APPLIED PHYSICS LETTERS

An AlGaN tunnel junction light emitting diode operating at 255 nm

(2020) A. Pandey et al.   APPLIED PHYSICS LETTERS

An electrically injected AlGaN nanowire defect-free photonic crystal ultraviolet laser

(2019) B. H. Le et al.   OPTICS EXPRESS

Effect of low hole mobility on the efficiency droop of AlGaN nanowire deep ultraviolet light emitting diodes

(2019) X. Hai et al.   APPLIED PHYSICS LETTERS

MOVPE-grown AlGaN-based tunnel heterojunctions enabling fully transparent UVC LEDs

(2019) Christian Kuhn et al.   Photonics Research

AlGaN nanocrystals: building blocks for efficient ultraviolet optoelectronics

(2019) Xianhe Liu et al.   Photonics Research

Enhanced doping efficiency of ultrawide band gap semiconductors by metal-semiconductor junction assisted epitaxy

(2019) A. Pandey et al.   PHYSICAL REVIEW MATERIALS

Deep Ultraviolet Luminescence Due to Extreme Confinement in Monolayer GaN/Al(Ga)N Nanowire and Planar Heterostructures

(2019) Anthony Aiello et al.   NANO LETTERS

Tunnel-injected sub 290 nm ultra-violet light emitting diodes with 2.8% external quantum efficiency

(2018) Yuewei Zhang et al.   APPLIED PHYSICS LETTERS

Charge carrier transport properties of Mg-doped Al0.6Ga0.4N grown by molecular beam epitaxy

(2018) Xianhe Liu et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Improving the Efficiency of Transverse Magnetic Polarized Emission from AlGaN Based LEDs by Using Nanowire Photonic Crystal

(2018) Xianhe Liu et al.   IEEE Photonics Journal

Auger recombination in AlGaN quantum wells for UV light-emitting diodes

(2018) Felix Nippert et al.   APPLIED PHYSICS LETTERS

A Review of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes on Sapphire

(2018) Yosuke Nagasawa et al.   Applied Sciences-Basel

Three dimensional simulation on the transport and quantum efficiency of UVC-LEDs with random alloy fluctuations

(2018) Hung-Hsiang Chen et al.   APPLIED PHYSICS LETTERS

Optical and interface characteristics of Al0.56Ga0.44N/Al0.62Ga0.38N multiquantum wells with ∼280 nm emission grown by plasma-assisted molecular beam epitaxy

(2018) Anthony Aiello et al.   JOURNAL OF CRYSTAL GROWTH

An AlGaN Core–Shell Tunnel Junction Nanowire Light-Emitting Diode Operating in the Ultraviolet-C Band

(2017) S. M. Sadaf et al.   NANO LETTERS

Selective area epitaxy of AlGaN nanowire arrays across nearly the entire compositional range for deep ultraviolet photonics

(2017) Xianhe Liu et al.   OPTICS EXPRESS

Design of p-type cladding layers for tunnel-injected UV-A light emitting diodes

(2016) Yuewei Zhang et al.   APPLIED PHYSICS LETTERS

Sub-milliwatt AlGaN nanowire tunnel junction deep ultraviolet light emitting diodes on silicon operating at 242 nm

(2016) S. Zhao et al.   APPLIED PHYSICS LETTERS

Ultraviolet optoelectronic devices based on AlGaN alloys grown by molecular beam epitaxy

(2016) Theodore D. Moustakas   MRS Communications

Analysis of efficiency droop in 280-nm AlGaN multiple-quantum-well light-emitting diodes based on carrier rate equation

(2015) Joosun Yun et al.   Applied Physics Express

Strongly transverse-electric-polarized emission from deep ultraviolet AlGaN quantum well light emitting diodes

(2015) Christoph Reich et al.   APPLIED PHYSICS LETTERS

KOH based selective wet chemical etching of AlN, AlxGa1−xN, and GaN crystals: A way towards substrate removal in deep ultraviolet-light emitting diode

(2015) W. Guo et al.   APPLIED PHYSICS LETTERS

Interband tunneling for hole injection in III-nitride ultraviolet emitters

(2015) Yuewei Zhang et al.   APPLIED PHYSICS LETTERS

Recent Progress in AlGaN-Based Deep-UV LEDs

(2015) HIDEKI HIRAYAMA et al.   Electronics and Communications in Japan

Ultralow-threshold electrically injected AlGaN nanowire ultraviolet lasers on Si operating at low temperature

(2015) K. H. Li et al.   Nature Nanotechnology

Principle of direct van der Waals epitaxy of single-crystalline films on epitaxial graphene

(2014) Jeehwan Kim et al.   Nature Communications

High p-type conduction in high-Al content Mg-doped AlGaN

(2013) Toru Kinoshita et al.   APPLIED PHYSICS LETTERS

Correlation between carrier localization and efficiency droop in AlGaN epilayers

(2013) J. Mickevičius et al.   APPLIED PHYSICS LETTERS

Efficiency droop in light-emitting diodes: Challenges and countermeasures

(2013) Jaehee Cho et al.   Laser & Photonics Reviews

Plasma-assisted molecular beam epitaxy of AlGaN heterostructures for deep-ultraviolet optically pumped lasers

(2013) V. N. Jmerik et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Direct Measurement of Auger Electrons Emitted from a Semiconductor Light-Emitting Diode under Electrical Injection: Identification of the Dominant Mechanism for Efficiency Droop

(2013) Justin Iveland et al.   PHYSICAL REVIEW LETTERS

Internal quantum efficiency in AlGaN with strong carrier localization

(2012) J. Mickevičius et al.   APPLIED PHYSICS LETTERS

Effect of strain and barrier composition on the polarization of light emission from AlGaN/AlN quantum wells

(2012) J. E. Northrup et al.   APPLIED PHYSICS LETTERS

Ultraviolet C irradiation: an alternative antimicrobial approach to localized infections?

(2012) Tianhong Dai et al.   Expert Review of Anti-Infective Therapy

AlGaN based deep ultraviolet light emitting diodes with high internal quantum efficiency grown by molecular beam epitaxy

(2011) Yitao Liao et al.   APPLIED PHYSICS LETTERS

Effect of temperature and strain on the optical polarization of (In)(Al)GaN ultraviolet light emitting diodes

(2011) Tim Kolbe et al.   APPLIED PHYSICS LETTERS

Auger Recombination in III-Nitride Nanowires and Its Effect on Nanowire Light-Emitting Diode Characteristics

(2011) Wei Guo et al.   NANO LETTERS

Polarization-engineering in group III-nitride heterostructures: New opportunities for device design

(2011) Debdeep Jena et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Polarization-engineered GaN/InGaN/GaN tunnel diodes

(2010) Sriram Krishnamoorthy et al.   APPLIED PHYSICS LETTERS

Defect-related tunneling mechanism of efficiency droop in III-nitride light-emitting diodes

(2010) N. I. Bochkareva et al.   APPLIED PHYSICS LETTERS

Optical polarization characteristics of ultraviolet (In)(Al)GaN multiple quantum well light emitting diodes

(2010) Tim Kolbe et al.   APPLIED PHYSICS LETTERS

Efficiency droop in nitride-based light-emitting diodes

(2010) Joachim Piprek   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

The origin of the high ideality factor in AlGaN-based quantum well ultraviolet light emitting diodes

(2010) K. B. Lee et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

Interband tunnel junctions for wurtzite III-nitride semiconductors based on heterointerface polarization charges

(2010) Martin F. Schubert   PHYSICAL REVIEW B

Polarization-Induced Hole Doping in Wide-Band-Gap Uniaxial Semiconductor Heterostructures

(2010) J. Simon et al.   SCIENCE

Deep ultraviolet emitting AlGaN quantum wells with high internal quantum efficiency

(2009) A. Bhattacharyya et al.   APPLIED PHYSICS LETTERS

Polarization-Induced Zener Tunnel Junctions in Wide-Band-Gap Heterostructures

(2009) John Simon et al.   PHYSICAL REVIEW LETTERS

Ultraviolet light-emitting diodes based on group three nitrides

(2008) Asif Khan et al.   Nature Photonics