Fundamentals, progress, and future directions of nitride-based semiconductors and their composites in two-dimensional limit: A first-principles perspective to recent synthesis

Lateral and Vertical Heterostructures of h-GaN/h-AlN: Electron Confinement, Band Lineup, and Quantum Structures

(2017) A. Onen et al.   Journal of Physical Chemistry C

Interfacial Defect Engineering on Electronic States of Two-Dimensional AlN/MoS2 Heterostructure

(2017) Qinglong Fang et al.   Journal of Physical Chemistry C

Electronic and Optical Properties of Two-Dimensional GaN from First-Principles

(2017) Nocona Sanders et al.   NANO LETTERS

Two single-layer porous gallium nitride nanosheets: A first-principles study

(2017) Hui Zhang et al.   SOLID STATE COMMUNICATIONS

Strain engineering of atomic and electronic structures of few-monolayer-thick GaN

(2017) A. V. Kolobov et al.   PHYSICAL REVIEW MATERIALS

Polar properties of a hexagonally bonded GaN sheet under biaxial compression

(2016) Yanlin Gao et al.   Applied Physics Express

Deep ultraviolet emission from ultra-thin GaN/AlN heterostructures

(2016) Dylan Bayerl et al.   APPLIED PHYSICS LETTERS

Instability and Spontaneous Reconstruction of Few-Monolayer Thick GaN Graphitic Structures

(2016) A. V. Kolobov et al.   NANO LETTERS

Archimedean (4,8)-tessellation of haeckelite ultrathin nanosheets composed of boron and aluminum-group V binary materials

(2016) Paul A. Brown et al.   Nanoscale

Van der Waals stacks of few-layer h-AlN with graphene: anab initiostudy of structural, interaction and electronic properties

(2016) Renato B dos Santos et al.   NANOTECHNOLOGY

Two-dimensional gallium nitride realized via graphene encapsulation

(2016) Zakaria Y. Al Balushi et al.   NATURE MATERIALS

Interactions of h-AlN monolayer with platinum, oxygen, and their clusters

(2015) F. Ersan et al.   CHEMICAL PHYSICS

Graphene-like AlN layer formation on (111)Si surface by ammonia molecular beam epitaxy

(2015) V. Mansurov et al.   JOURNAL OF CRYSTAL GROWTH

Chemical Functionalization of GaN Monolayer by Adatom Adsorption

(2015) Yuewen Mu   Journal of Physical Chemistry C

Modulation of Electronic Properties in Laterally and Commensurately Repeating Graphene and Boron Nitride Composite Nanostructures

(2015) V. Ongun Özçelik et al.   Journal of Physical Chemistry C

Ab-initio computations of electronic and transport properties of wurtzite aluminum nitride (w-AlN)

(2015) Ifeanyi H. Nwigboji et al.   MATERIALS CHEMISTRY AND PHYSICS

Quasiparticle self-consistent GW study of AIN

(2015) Ali Bakhtatou et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

Strong second harmonic generation in SiC, ZnO, GaN two-dimensional hexagonal crystals from first-principles many-body calculations

(2015) C. Attaccalite et al.   PHYSICAL CHEMISTRY CHEMICAL PHYSICS

High-performance planar nanoscale dielectric capacitors

(2015) V. Ongun Özçelik et al.   PHYSICAL REVIEW B

Layer- and strain-dependent optoelectronic properties of hexagonal AlN

(2015) D. Kecik et al.   PHYSICAL REVIEW B

Hexagonal AlN: Dimensional-crossover-driven band-gap transition

(2015) C. Bacaksiz et al.   PHYSICAL REVIEW B

Nobel Lecture: Background story of the invention of efficient blue InGaN light emitting diodes

(2015) Shuji Nakamura   REVIEWS OF MODERN PHYSICS

Optical excitations and quasiparticle energies in the AlN monolayer honeycomb structure

(2015) Davoud Vahedi Fakhrabad et al.   SUPERLATTICES AND MICROSTRUCTURES

Direct growth of GaN layer on carbon nanotube-graphene hybrid structure and its application for light emitting diodes

(2015) Tae Hoon Seo et al.   Scientific Reports

GaN Haeckelite Single-Layered Nanostructures: Monolayer and Nanotubes

(2015) Dulce C. Camacho-Mojica et al.   Scientific Reports

A route to low temperature growth of single crystal GaN on sapphire

(2015) Pouyan Motamedi et al.   Journal of Materials Chemistry C

Radio-frequency plasma-excited molecular beam epitaxy growth of GaN on graphene/Si(100) substrates

(2014) Tsutomu Araki et al.   Applied Physics Express

Computational synthesis of single-layer GaN on refractory materials

(2014) Arunima K. Singh et al.   APPLIED PHYSICS LETTERS

Effects of strain on the band structure of group-III nitrides

(2014) Qimin Yan et al.   PHYSICAL REVIEW B

Atomic structure of the3×3phase of silicene on Ag(111)

(2014) Seymur Cahangirov et al.   PHYSICAL REVIEW B

Silicite: The layered allotrope of silicon

(2014) Seymur Cahangirov et al.   PHYSICAL REVIEW B

Ab initiosynthesis of single-layer III-V materials

(2014) Arunima K. Singh et al.   PHYSICAL REVIEW B

Layer-controlled band gap and anisotropic excitons in few-layer black phosphorus

(2014) Vy Tran et al.   PHYSICAL REVIEW B

New manifold two-dimensional single-layer structures of zinc-blende compounds

(2014) Chuan-Jia Tong et al.   Journal of Materials Chemistry A

Repeated and Controlled Growth of Monolayer, Bilayer and Few-Layer Hexagonal Boron Nitride on Pt Foils

(2013) Yang Gao et al.   ACS Nano

Mechanical properties of g-GaN: a first principles study

(2013) Qing Peng et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Epitaxial Growth of III–Nitride/Graphene Heterostructures for Electronic Devices

(2013) Neeraj Nepal et al.   Applied Physics Express

Evidence for graphite-like hexagonal AlN nanosheets epitaxially grown on single crystal Ag(111)

(2013) P. Tsipas et al.   APPLIED PHYSICS LETTERS

Principal physical properties of GaN/AlN multiquantum well systems determined by density functional theory calculations

(2013) Pawel Strak et al.   JOURNAL OF APPLIED PHYSICS

Stacking and electric field effects in atomically thin layers of GaN

(2013) Dongwei Xu et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Van der Waals heterostructures

(2013) A. K. Geim et al.   NATURE

Quasiparticle band structures and optical properties of strained monolayer MoS2and WS2

(2013) Hongliang Shi et al.   PHYSICAL REVIEW B

Computational discovery of single-layer III-V materials

(2013) Houlong L. Zhuang et al.   PHYSICAL REVIEW B

Anisotropic absorption and emission of bulk(11¯00)AlN

(2013) Martin Feneberg et al.   PHYSICAL REVIEW B

Theory of local electric polarization and its relation to internal strain: Impact on polarization potential and electronic properties of group-III nitrides

(2013) Miguel A. Caro et al.   PHYSICAL REVIEW B

Optical Spectrum ofMoS2: Many-Body Effects and Diversity of Exciton States

(2013) Diana Y. Qiu et al.   PHYSICAL REVIEW LETTERS

Tunable band gap of AlN, GaN nanoribbons and AlN/GaN nanoribbon heterojunctions: A first-principle study

(2013) Qian Chen et al.   SOLID STATE COMMUNICATIONS

Impact of widely used approximations to theG0W0method: an all-electron perspective

(2012) Xin-Zheng Li et al.   NEW JOURNAL OF PHYSICS

Valence band effective-mass Hamiltonians for the group-III nitrides from quasiparticle self-consistentGWband structures

(2012) Atchara Punya et al.   PHYSICAL REVIEW B

Substrate effects on the strain relaxation in GaN/AlN short-period superlattices

(2012) Vasyl Kladko et al.   Nanoscale Research Letters

Tailoring band gap in GaN sheet by chemical modification and electric field: Ab initio calculations

(2011) Qian Chen et al.   APPLIED PHYSICS LETTERS

Magnetic properties of the semifluorinated and semihydrogenated 2D sheets of group-IV and III-V binary compounds

(2011) Yandong Ma et al.   APPLIED SURFACE SCIENCE

Interaction potential for aluminum nitride: A molecular dynamics study of mechanical and thermal properties of crystalline and amorphous aluminum nitride

(2011) Priya Vashishta et al.   JOURNAL OF APPLIED PHYSICS

Synthesis of Monolayer Hexagonal Boron Nitride on Cu Foil Using Chemical Vapor Deposition

(2011) Ki Kang Kim et al.   NANO LETTERS

Photoluminescence from Chemically Exfoliated MoS2

(2011) Goki Eda et al.   NANO LETTERS

Electronic structure and optical properties of zinc-blende GaN

(2011) Yujie Du et al.   OPTIK

Interplay of excitonic effects and van Hove singularities in optical spectra: CaO and AlN polymorphs

(2011) A. Riefer et al.   PHYSICAL REVIEW B

Influence of exchange and correlation on structural and electronic properties of AlN, GaN, and InN polytypes

(2011) Luiz Cláudio de Carvalho et al.   PHYSICAL REVIEW B

Stabilizing Graphitic Thin Films of Wurtzite Materials by Epitaxial Strain

(2011) Dangxin Wu et al.   PHYSICAL REVIEW LETTERS

Band gap engineering of wurtzite and zinc-blende GaN/AlN superlattices from first principles

(2010) X. Y. Cui et al.   JOURNAL OF APPLIED PHYSICS

Emerging Photoluminescence in Monolayer MoS2

(2010) Andrea Splendiani et al.   NANO LETTERS

Electronic structure of GaN and Ga investigated by soft x-ray spectroscopy and first-principles methods

(2010) Martin Magnuson et al.   PHYSICAL REVIEW B

Armchair nanoribbons of silicon and germanium honeycomb structures

(2010) S. Cahangirov et al.   PHYSICAL REVIEW B

Atomically ThinMoS2: A New Direct-Gap Semiconductor

(2010) Kin Fai Mak et al.   PHYSICAL REVIEW LETTERS

Structural and electronic properties of monolayer hydrogenated honeycomb III–V sheets from first-principles

(2010) Yanli Wang et al.   SOLID STATE COMMUNICATIONS

Fabrication, Self-Assembly, and Properties of Ultrathin AlN/GaN Porous Crystalline Nanomembranes: Tubes, Spirals, and Curved Sheets

(2009) Yongfeng Mei et al.   ACS Nano

Sequential growths of AlN and GaN layers on as-polished 6H–SiC(0001) substrates

(2009) Z.J. Reitmeier et al.   ACTA MATERIALIA

Dielectric function of zinc-blende AlN from 1 to 20 eV: Band gap and van Hove singularities

(2009) M. Röppischer et al.   JOURNAL OF APPLIED PHYSICS

III-V compound SC for optoelectronic devices

(2009) Sudha Mokkapati et al.   Materials Today

Monolayer honeycomb structures of group-IV elements and III-V binary compounds: First-principles calculations

(2009) H. Şahin et al.   PHYSICAL REVIEW B

Two- and One-Dimensional Honeycomb Structures of Silicon and Germanium

(2009) S. Cahangirov et al.   PHYSICAL REVIEW LETTERS

Spin confinement in the superlattices of graphene ribbons

(2008) M. Topsakal et al.   APPLIED PHYSICS LETTERS

Electronic and Optical Properties of Rock-Salt A1N under High Pressure via First-Principles Analysis

(2008) Zhang Wei et al.   COMMUNICATIONS IN THEORETICAL PHYSICS

Theoretical studies of SiC, AlN and their (110) surfaces

(2008) S. Bağcı et al.   DIAMOND AND RELATED MATERIALS

Optical properties of rocksalt and zinc blende AlN phases: First-principles calculations

(2008) Y. C. Cheng et al.   JOURNAL OF APPLIED PHYSICS

Ultraviolet light-emitting diodes based on group three nitrides

(2008) Asif Khan et al.   Nature Photonics

Electronic excitations in single-walled GaN nanotubes from first principles: Dark excitons and unconventional diameter dependences

(2008) Sohrab Ismail-Beigi   PHYSICAL REVIEW B

Superlattice structures of graphene-based armchair nanoribbons

(2008) H. Sevinçli et al.   PHYSICAL REVIEW B

Consistent set of band parameters for the group-III nitrides AlN, GaN, and InN

(2008) Patrick Rinke et al.   PHYSICAL REVIEW B

Ab-initio study of AlN in zinc-blende and rock-salt phases

(2008) U.P. Verma et al.   SOLID STATE SCIENCES