Sub-250 nm light emission and optical gain in AlGaN materials

Polarization Properties of Deep-Ultraviolet Optical Gain in Al-Rich AlGaN Structures

(2012) Emanuele Francesco Pecora et al.   Applied Physics Express

AlGaN Deep-Ultraviolet Light-Emitting Diodes with External Quantum Efficiency above 10%

(2012) Max Shatalov et al.   Applied Physics Express

444.9 nm semipolar (112¯2) laser diode grown on an intentionally stress relaxed InGaN waveguiding layer

(2012) Po Shan Hsu et al.   APPLIED PHYSICS LETTERS

Sub-250 nm room-temperature optical gain from AlGaN/AlN multiple quantum wells with strong band-structure potential fluctuations

(2012) Emanuele Francesco Pecora et al.   APPLIED PHYSICS LETTERS

Stimulated emission in AlGaN/AlGaN quantum wells with different Al content

(2012) J. Mickevičius et al.   APPLIED PHYSICS LETTERS

Effect of strain and barrier composition on the polarization of light emission from AlGaN/AlN quantum wells

(2012) J. E. Northrup et al.   APPLIED PHYSICS LETTERS

Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices

(2012) R M Farrell et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Pseudomorphically Grown Ultraviolet C Photopumped Lasers on Bulk AlN Substrates

(2011) Thomas Wunderer et al.   Applied Physics Express

Large optical gain AlGaN-delta-GaN quantum wells laser active regions in mid- and deep-ultraviolet spectral regimes

(2011) Jing Zhang et al.   APPLIED PHYSICS LETTERS

AlGaN based deep ultraviolet light emitting diodes with high internal quantum efficiency grown by molecular beam epitaxy

(2011) Yitao Liao et al.   APPLIED PHYSICS LETTERS

Polarization property of deep-ultraviolet light emission from C-plane AlN/GaN short-period superlattices

(2011) Yoshitaka Taniyasu et al.   APPLIED PHYSICS LETTERS

Optical Gain in GaInNAs and GaInNAsSb Quantum Wells

(2011) James W. Ferguson et al.   IEEE JOURNAL OF QUANTUM ELECTRONICS

Improvement in spontaneous emission rates for InGaN quantum wells on ternary InGaN substrate for light-emitting diodes

(2011) Jing Zhang et al.   JOURNAL OF APPLIED PHYSICS

Al Composition Dependence of the Optical Gain Characteristics of a-plane Al-rich AlGaN/AlN Quantum-well Structures

(2011) Seoung-Hwan Park   JOURNAL OF THE KOREAN PHYSICAL SOCIETY

Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells

(2011) Hongping Zhao et al.   OPTICS EXPRESS

Theoretical investigation of optical polarization properties in Al-rich AlGaN quantum wells with various substrate orientations

(2010) A. Atsushi Yamaguchi   APPLIED PHYSICS LETTERS

Effect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers

(2010) Jing Zhang et al.   APPLIED PHYSICS LETTERS

100 mW deep-ultraviolet emission from aluminium-nitride-based quantum wells pumped by an electron beam

(2010) Takao Oto et al.   Nature Photonics

Deep ultraviolet emitting AlGaN quantum wells with high internal quantum efficiency

(2009) A. Bhattacharyya et al.   APPLIED PHYSICS LETTERS

Spontaneous Radiative Efficiency and Gain Characteristics of Strained-Layer InGaAs–GaAs Quantum-Well Lasers

(2008) Gene Tsvid et al.   IEEE JOURNAL OF QUANTUM ELECTRONICS