Full-color InGaN/GaN dot-in-a-wire light emitting diodes on silicon
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Title
Full-color InGaN/GaN dot-in-a-wire light emitting diodes on silicon
Authors
Keywords
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Journal
NANOTECHNOLOGY
Volume 22, Issue 44, Pages 445202
Publisher
IOP Publishing
Online
2011-10-06
DOI
10.1088/0957-4484/22/44/445202
References
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Related references
Note: Only part of the references are listed.- Effect of Electron Leakage on Efficiency Droop in Wide-Well InGaN-Based Light-Emitting Diodes
- (2011) Liann-Be Chang et al. Applied Physics Express
- p-Type Modulation Doped InGaN/GaN Dot-in-a-Wire White-Light-Emitting Diodes Monolithically Grown on Si(111)
- (2011) H. P. T. Nguyen et al. NANO LETTERS
- High efficiency green, yellow, and amber emission from InGaN/GaN dot-in-a-wire heterostructures on Si(111)
- (2010) Y.-L. Chang et al. APPLIED PHYSICS LETTERS
- Emission color control from blue to red with nanocolumn diameter of InGaN/GaN nanocolumn arrays grown on same substrate
- (2010) Hiroto Sekiguchi et al. APPLIED PHYSICS LETTERS
- Hot electron effects on efficiency degradation in InGaN light emitting diodes and designs to mitigate them
- (2010) X. Ni et al. JOURNAL OF APPLIED PHYSICS
- Improvement of efficiency droop in InGaN/GaN multiple quantum well light-emitting diodes with trapezoidal wells
- (2010) Sang-Heon Han et al. JOURNAL OF PHYSICS D-APPLIED PHYSICS
- Catalyst-Free InGaN/GaN Nanowire Light Emitting Diodes Grown on (001) Silicon by Molecular Beam Epitaxy
- (2010) Wei Guo et al. NANO LETTERS
- DNA interaction studies of new nano metal based anticancer agent: validation by spectroscopic methods
- (2010) Sartaj Tabassum et al. NANOTECHNOLOGY
- The effect of ballistic and quasi-ballistic electrons on the efficiency droop of InGaN light emitting diodes
- (2010) X. Ni et al. Physica Status Solidi-Rapid Research Letters
- Measurement of electron overflow in 450 nm InGaN light-emitting diode structures
- (2009) Kenneth J. Vampola et al. APPLIED PHYSICS LETTERS
- Efficiency Enhancement and Beam Shaping of GaN–InGaN Vertical-Injection Light-Emitting Diodes via High-Aspect-Ratio Nanorod Arrays
- (2009) Min-An Tsai et al. IEEE PHOTONICS TECHNOLOGY LETTERS
- Molecular beam epitaxial growth and characterization of non-tapered InN nanowires on Si(111)
- (2009) Yi-Lu Chang et al. NANOTECHNOLOGY
- Strong green photoluminescence from InxGa_1-xN/GaN nanorod arrays
- (2009) Chi-Chang Hong et al. OPTICS EXPRESS
- Atomic and electronic structure of the nonpolarGaN(11¯00)surface
- (2009) M. Bertelli et al. PHYSICAL REVIEW B
- Polarization-matched GaInN∕AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop
- (2008) Martin F. Schubert et al. APPLIED PHYSICS LETTERS
- Quantum-confined Stark effect on photoluminescence and electroluminescence characteristics of InGaN-based light-emitting diodes
- (2008) Hisashi Masui et al. JOURNAL OF PHYSICS D-APPLIED PHYSICS
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