The impact of trench defects in InGaN/GaN light emitting diodes and implications for the “green gap” problem

Structure and strain relaxation effects of defects in InxGa1−xN epilayers

(2014) S. L. Rhode et al.   JOURNAL OF APPLIED PHYSICS

The impact of growth parameters on trench defects in InGaN/GaN quantum wells

(2014) F. C.-P. Massabuau et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Strain-induced defects as nonradiative recombination centers in green-emitting GaInN/GaN quantum well structures

(2013) Torsten Langer et al.   APPLIED PHYSICS LETTERS

Suppression of thermal degradation of InGaN/GaN quantum wells in green laser diode structures during the epitaxial growth

(2013) Zengcheng Li et al.   APPLIED PHYSICS LETTERS

Trench-Shaped Defects on AlGaInN Quantum Wells Grown under Different Growth Pressures

(2013) Tomoyuki Suzuki et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Correlations between the morphology and emission properties of trench defects in InGaN/GaN quantum wells

(2013) F. C.-P. Massabuau et al.   JOURNAL OF APPLIED PHYSICS

Morphological, structural, and emission characterization of trench defects in InGaN/GaN quantum well structures

(2012) F. C.-P. Massabuau et al.   APPLIED PHYSICS LETTERS

The consequences of high injected carrier densities on carrier localization and efficiency droop in InGaN/GaN quantum well structures

(2012) S. Hammersley et al.   JOURNAL OF APPLIED PHYSICS

Properties of trench defects in InGaN/GaN quantum well structures

(2012) S.-L. Sahonta et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

High resolution cathodoluminescence hyperspectral imaging of surface features in InGaN/GaN multiple quantum well structures

(2011) Jochen Bruckbauer et al.   APPLIED PHYSICS LETTERS

Dislocations and their reduction in GaN

(2010) S. E. Bennett   MATERIALS SCIENCE AND TECHNOLOGY

Efficiency droop in nitride-based light-emitting diodes

(2010) Joachim Piprek   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Surface morphological studies of green InGaN/GaN multi-quantum wells grown by using MOCVD

(2008) M. Senthil Kumar et al.   MATERIALS CHEMISTRY AND PHYSICS