Monolithic Integration of InGaN-Based Nanocolumn Light-Emitting Diodes with Different Emission Colors

Near-Infrared InGaN Nanocolumn Light-Emitting Diodes Operated at 1.46 $\mu$m

(2012) Katsumi Kishino et al.   Applied Physics Express

GaN based nanorods for solid state lighting

(2012) Shunfeng Li et al.   JOURNAL OF APPLIED PHYSICS

p-Type Modulation Doped InGaN/GaN Dot-in-a-Wire White-Light-Emitting Diodes Monolithically Grown on Si(111)

(2011) H. P. T. Nguyen et al.   NANO LETTERS

InGaN/GaN nanorod array white light-emitting diode

(2010)   APPLIED PHYSICS LETTERS

Emission color control from blue to red with nanocolumn diameter of InGaN/GaN nanocolumn arrays grown on same substrate

(2010) Hiroto Sekiguchi et al.   APPLIED PHYSICS LETTERS

531 nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar {20\bar21} Free-Standing GaN Substrates

(2009) Yohei Enya et al.   Applied Physics Express

Ti-mask Selective-Area Growth of GaN by RF-Plasma-Assisted Molecular-Beam Epitaxy for Fabricating Regularly Arranged InGaN/GaN Nanocolumns

(2008) Hiroto Sekiguchi et al.   Applied Physics Express

GaN/AlGaN nanocolumn ultraviolet light-emitting diodes grown on n-(111) Si by RF-plasma-assisted molecular beam epitaxy

(2008) H. Sekiguchi et al.   ELECTRONICS LETTERS

Nucleation and growth of GaN nanorods on Si (111) surfaces by plasma-assisted molecular beam epitaxy - The influence of Si- and Mg-doping

(2008) Florian Furtmayr et al.   JOURNAL OF APPLIED PHYSICS

Improved Ti-mask selective-area growth (SAG) by rf-plasma-assisted molecular beam epitaxy demonstrating extremely uniform GaN nanocolumn arrays

(2008) Katsumi Kishino et al.   JOURNAL OF CRYSTAL GROWTH