Optical and electrical properties of Mg-doped AlN nanowires grown by molecular beam epitaxy
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Title
Optical and electrical properties of Mg-doped AlN nanowires grown by molecular beam epitaxy
Authors
Keywords
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Journal
APPLIED PHYSICS LETTERS
Volume 106, Issue 21, Pages 213105
Publisher
AIP Publishing
Online
2015-05-27
DOI
10.1063/1.4921626
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Related references
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- (2012) Yeung Yu Hui et al. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
- Tunable p-Type Conductivity and Transport Properties of AlN Nanowires via Mg Doping
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- Ferromagnetic coupling in Mg-doped passivated AlN nanowires: A first-principles study
- (2011) Zhen-Kun Tang et al. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
- Photoluminescence studies of impurity transitions in Mg-doped AlGaN alloys
- (2009) M. L. Nakarmi et al. APPLIED PHYSICS LETTERS
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