When group-III nitrides go infrared: New properties and perspectives

Probing and modulating surface electron accumulation in InN by the electrolyte gated Hall effect

(2009) G. F. Brown et al.   APPLIED PHYSICS LETTERS

Surface electronic properties of undoped InAlN alloys

(2008) P. D. C. King et al.   APPLIED PHYSICS LETTERS

High-phase-purity zinc-blende InN on r-plane sapphire substrate with controlled nitridation pretreatment

(2008) Ching-Lien Hsiao et al.   APPLIED PHYSICS LETTERS

Cross-sectional scanning photoelectron microscopy and spectroscopy of wurtzite InN∕GaN heterojunction: Measurement of “intrinsic” band lineup

(2008) Chung-Lin Wu et al.   APPLIED PHYSICS LETTERS

InN nanotips as excellent field emitters

(2008) K. R. Wang et al.   APPLIED PHYSICS LETTERS

Temperature dependence of the phase-coherence length in InN nanowires

(2008) Ch. Blömers et al.   APPLIED PHYSICS LETTERS

Anion detection using ultrathin InN ion selective field effect transistors

(2008) Yen-Sheng Lu et al.   APPLIED PHYSICS LETTERS

Sources of unintentional conductivity in InN

(2008) Anderson Janotti et al.   APPLIED PHYSICS LETTERS

Hole mobility in Mg-doped p-type InN films

(2008) Xinqiang Wang et al.   APPLIED PHYSICS LETTERS

High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap

(2008) Carl J. Neufeld et al.   APPLIED PHYSICS LETTERS

Intense terahertz emission from a-plane InN surface

(2008) H. Ahn et al.   APPLIED PHYSICS LETTERS

Cool white III-nitride light emitting diodes based on phosphor-free indium-rich InGaN nanostructures

(2008) C. B. Soh et al.   APPLIED PHYSICS LETTERS

Stable response to visible light of InGaN photoelectrodes

(2008) Wenjun Luo et al.   APPLIED PHYSICS LETTERS

Thermoelectric properties of InxGa1−xN alloys

(2008) B. N. Pantha et al.   APPLIED PHYSICS LETTERS

Observation of femtosecond carrier thermalization time in indium nitride

(2008) Shih-Ze Sun et al.   JOURNAL OF APPLIED PHYSICS

Electronic and photoconductive properties of ultrathin InGaN photodetectors

(2008) V. Lebedev et al.   JOURNAL OF APPLIED PHYSICS

Electronic structure and effective masses of InN under pressure

(2008) I. Gorczyca et al.   JOURNAL OF APPLIED PHYSICS

Effects of dislocations on electron transport in wurtzite InN

(2008) Xin-Gang Yu et al.   JOURNAL OF APPLIED PHYSICS

Bowing of the band gap pressure coefficient in InxGa1−xN alloys

(2008) G. Franssen et al.   JOURNAL OF APPLIED PHYSICS

Modeling of InGaN/Si tandem solar cells

(2008) L. Hsu et al.   JOURNAL OF APPLIED PHYSICS

MOCVD Growth of InN on Si(111) with Various Buffer Layers

(2008) C.C. Huang et al.   JOURNAL OF ELECTRONIC MATERIALS

Investigation on the structural origin of n-type conductivity in InN films

(2008) H Wang et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Growth of InN on Si (111) by atmospheric-pressure metal-organic chemical vapor deposition using InN∕AlN double-buffer layers

(2008) Zhen-Yu Li et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

Flux Quantization Effects in InN Nanowires

(2008) Thomas Richter et al.   NANO LETTERS

Multi-quantum-well nanowire heterostructures for wavelength-controlled lasers

(2008) Fang Qian et al.   NATURE MATERIALS

Highly efficient THz emission from differently grown InN at 800nm and 1060nm excitation

(2008) G. Matthäus et al.   OPTICS COMMUNICATIONS

Growth and properties of near-UV light emitting diodes based on InN/GaN quantum wells

(2008) E. Dimakis et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

MOVPE of InN films on GaN templates grown on sapphire and silicon(111) substrates

(2008) Muhammad Jamil et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Growth, fabrication, and characterization of InGaN solar cells

(2008) X. Chen et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Electrical properties of InGaN grown by molecular beam epitaxy

(2008) William J. Schaff et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

Mg-doped InN and InGaN – Photoluminescence, capacitance–voltage and thermopower measurements

(2008) J. W. Ager et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

Surface electronic properties of n- and p-type InGaN alloys

(2008) P. D. C. King et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

Phase-coherent transport in InN nanowires of various sizes

(2008) Ch. Blömers et al.   PHYSICAL REVIEW B

Determination of the branch-point energy of InN: Chemical trends in common-cation and common-anion semiconductors

(2008) P. D. C. King et al.   PHYSICAL REVIEW B

Nitrogen vacancies in InN: Vacancy clustering and metallic bonding from first principles

(2008) X. M. Duan et al.   PHYSICAL REVIEW B

Experimental evidence of different hydrogen donors inn-type InN

(2008) G. Pettinari et al.   PHYSICAL REVIEW B

Nonparabolic coupled Poisson-Schrödinger solutions for quantized electron accumulation layers: Band bending, charge profile, and subbands at InN surfaces

(2008) P. D. C. King et al.   PHYSICAL REVIEW B

InN/GaN valence band offset: High-resolution x-ray photoemission spectroscopy measurements

(2008) P. D. C. King et al.   PHYSICAL REVIEW B

Consistent set of band parameters for the group-III nitrides AlN, GaN, and InN

(2008) Patrick Rinke et al.   PHYSICAL REVIEW B

Absence of Fermi-Level Pinning at Cleaved Nonpolar InN Surfaces

(2008) Chung-Lin Wu et al.   PHYSICAL REVIEW LETTERS

Dielectric function of cubic InN from the mid-infrared to the visible spectral range

(2008) P Schley et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Two dimensional electron gas in InN-based heterostructures: Effects of spontaneous and piezoelectric polarization

(2007) Md. Tanvir Hasan et al.   SOLID-STATE ELECTRONICS

Slowing of carrier cooling in hot carrier solar cells

(2007) G.J. Conibeer et al.   THIN SOLID FILMS