Impact of the surface recombination on InGaN/GaN-based blue micro-light emitting diodes
Published 2019 View Full Article
- Home
- Publications
- Publication Search
- Publication Details
Title
Impact of the surface recombination on InGaN/GaN-based blue micro-light emitting diodes
Authors
Keywords
-
Journal
OPTICS EXPRESS
Volume 27, Issue 12, Pages A643
Publisher
The Optical Society
Online
2019-05-02
DOI
10.1364/oe.27.00a643
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- The trap states in lightly Mg-doped GaN grown by MOVPE on a freestanding GaN substrate
- (2018) JOURNAL OF APPLIED PHYSICS
- High accuracy transfer printing of single-mode membrane silicon photonic devices
- (2018) John McPhillimy et al. OPTICS EXPRESS
- High efficiency of III-nitride micro-light-emitting diodes by sidewall passivation using atomic layer deposition
- (2018) Matthew S. Wong et al. OPTICS EXPRESS
- Mini-LED and Micro-LED: Promising Candidates for the Next Generation Display Technology
- (2018) Tingzhu Wu et al. Applied Sciences-Basel
- On the p-AlGaN/n-AlGaN/p-AlGaN Current Spreading Layer for AlGaN-based Deep Ultraviolet Light-Emitting Diodes
- (2018) Jiamang Che et al. Nanoscale Research Letters
- Transfer-printed micro-LED and polymer-based transceiver for visible light communications
- (2018) K. Rae et al. OPTICS EXPRESS
- Influence of size-reduction on the performances of GaN-based micro-LEDs for display application
- (2017) François Olivier et al. JOURNAL OF LUMINESCENCE
- Inorganic light-emitting diode displays using micro-transfer printing
- (2017) Ronald S. Cok et al. Journal of the Society for Information Display
- From Large-Size to Micro-LEDs: Scaling Trends Revealed by Modeling
- (2017) Sergey S. Konoplev et al. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
- Transfer print techniques for heterogeneous integration of photonic components
- (2017) Brian Corbett et al. PROGRESS IN QUANTUM ELECTRONICS
- Enhanced light extraction efficiency of a InGaN/GaN micro-square array light-emitting diode chip
- (2017) Dan Han et al. Optical Materials Express
- Wavelength tunable InGaN/GaN nano-ring LEDs via nano-sphere lithography
- (2017) Sheng-Wen Wang et al. Scientific Reports
- On the hole accelerator for III-nitride light-emitting diodes
- (2016) Zi-Hui Zhang et al. APPLIED PHYSICS LETTERS
- Investigation of Photon-Generated Leakage Current for High-Performance Active Matrix Micro-LED Displays
- (2016) Ke Zhang et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- GaN-based emissive microdisplays: A very promising technology for compact, ultra-high brightness display systems
- (2016) François Templier Journal of the Society for Information Display
- High-performance, single-pyramid micro light-emitting diode with leakage current confinement layer
- (2015) Weijie Chen et al. Applied Physics Express
- A hole modulator for InGaN/GaN light-emitting diodes
- (2015) Zi-Hui Zhang et al. APPLIED PHYSICS LETTERS
- GaN-based LED micro-displays for wearable applications
- (2015) Zhaojun Liu et al. MICROELECTRONIC ENGINEERING
- Study on the Optimization for Current Spreading Effect of Lateral GaN/InGaN LEDs
- (2014) Chi-Kang Li et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- 600-V Normally Off ${\rm SiN}_{x}$/AlGaN/GaN MIS-HEMT With Large Gate Swing and Low Current Collapse
- (2013) Zhikai Tang et al. IEEE ELECTRON DEVICE LETTERS
- Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer
- (2013) Zi-Hui Zhang et al. OPTICS EXPRESS
- Size-dependent efficiency and efficiency droop of blue InGaN micro-light emitting diodes
- (2012) Pengfei Tian et al. APPLIED PHYSICS LETTERS
- Size-dependent light output, spectral shift, and self-heating of 400 nm InGaN light-emitting diodes
- (2010) Zheng Gong et al. JOURNAL OF APPLIED PHYSICS
- A combined electro-optical method for the determination of the recombination parameters in InGaN-based light-emitting diodes
- (2009) Matteo Meneghini et al. JOURNAL OF APPLIED PHYSICS
- Anomalous deep-level transients related to quantum well piezoelectric fields inInyGa1−yN∕GaN-heterostructure light-emitting diodes
- (2008) L. Rigutti et al. PHYSICAL REVIEW B
Find the ideal target journal for your manuscript
Explore over 38,000 international journals covering a vast array of academic fields.
SearchCreate your own webinar
Interested in hosting your own webinar? Check the schedule and propose your idea to the Peeref Content Team.
Create Now