Influence of threading dislocation density on early degradation in AlGaN/GaN high electron mobility transistors

Effects of Threading Dislocation Density on the Gate Leakage of AlGaN/GaN Heterostructures for High Electron Mobility Transistors

(2011) Stephen W. Kaun et al.   Applied Physics Express

Capacitance–Voltage Characteristics of Al2O3/AlGaN/GaN Structures and State Density Distribution at Al2O3/AlGaN Interface

(2011) Chihoko Mizue et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Frequency and Noise Performances of Photoelectrochemically Etched and Oxidized Gate-Recessed AlGaN/GaN MOS-HEMTs

(2011) Ya-Lan Chiou et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Importance of impurity diffusion for early stage degradation in AlGaN/GaN high electron mobility transistors upon electrical stress

(2010) M. Ťapajna et al.   APPLIED PHYSICS LETTERS

High-current-density high-voltage normally-off AlGaN/GaN hybrid-gate HEMT with low on-resistance

(2010) W. Chen et al.   ELECTRONICS LETTERS

Integrated Optical and Electrical Analysis: Identifying Location and Properties of Traps in AlGaN/GaN HEMTs During Electrical Stress

(2010) Milan Ťapajna et al.   IEEE ELECTRON DEVICE LETTERS

Effects of Threading Dislocations on AlGaN/GaN High-Electron Mobility Transistors

(2009) Fabio Alessio Marino et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

TEM Observation of Crack- and Pit-Shaped Defects in Electrically Degraded GaN HEMTs

(2008) U. Chowdhury et al.   IEEE ELECTRON DEVICE LETTERS

Effect of threading dislocations on carrier mobility in AlGaN/GaN quantum wells

(2008) F Carosella et al.   JOURNAL OF PHYSICS-CONDENSED MATTER