Vertical architecture for enhancement mode power transistors based on GaN nanowires

A top-gate GaN nanowire metal–semiconductor field effect transistor with improved channel electrostatic control

(2016) Ž. Gačević et al.   APPLIED PHYSICS LETTERS

Vertical GaN-based trench metal oxide semiconductor field-effect transistors on a free-standing GaN substrate with blocking voltage of 1.6 kV

(2014) Tohru Oka et al.   Applied Physics Express

Nitrogen-polar core-shell GaN light-emitting diodes grown by selective area metalorganic vapor phase epitaxy

(2012) Shunfeng Li et al.   APPLIED PHYSICS LETTERS

Short channel effects on gallium nitride/gallium oxide nanowire transistors

(2012) J.-W. Yu et al.   APPLIED PHYSICS LETTERS

Tri-Gate Normally-Off GaN Power MISFET

(2012) Bin Lu et al.   IEEE ELECTRON DEVICE LETTERS

GaN based nanorods for solid state lighting

(2012) Shunfeng Li et al.   JOURNAL OF APPLIED PHYSICS

A III–V nanowire channel on silicon for high-performance vertical transistors

(2012) Katsuhiro Tomioka et al.   NATURE

GaN/InGaN heterojunction bipolar transistors with ultra-high d.c. power density (>3 MW/cm2)

(2012) Yi-Che Lee et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Nonpolar AlGaN/GaN HFETs with a normally off operation

(2012) M Ishida et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Nonpolara-Plane AlGaN/GaN Heterostructure Field-Effect Transistors Grown on Freestanding GaN Substrate

(2011) Yasuhiro Isobe et al.   Applied Physics Express

Enhancement-Mode $m$-plane AlGaN/GaN Heterojunction Field-Effect Transistors with +3 V of Threshold Voltage Using Al$_{2}$O$_{3}$ Deposited by Atomic Layer Deposition

(2011) Tetsuya Fujiwara et al.   Applied Physics Express

MOSFETs Made From GaN Nanowires With Fully Conformal Cylindrical Gates

(2011) Paul T. Blanchard et al.   IEEE TRANSACTIONS ON NANOTECHNOLOGY

Multigate transistors as the future of classical metal–oxide–semiconductor field-effect transistors

(2011) Isabelle Ferain et al.   NATURE

Semiconductor Nanowire: What’s Next?

(2010) Peidong Yang et al.   NANO LETTERS

Enhancement-Modem-plane AlGaN/GaN Heterojunction Field-Effect Transistors

(2009) Tetsuya Fujiwara et al.   Applied Physics Express

GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistor Fabricated with Novel Wet Etching

(2008) Masahito Kodama et al.   Applied Physics Express

MESFETs Made From Individual GaN Nanowires

(2008) P.T. Blanchard et al.   IEEE TRANSACTIONS ON NANOTECHNOLOGY

Smooth Top-Down Photoelectrochemical Etching of m-Plane GaN

(2008) Adele C. Tamboli et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY