Electrically driven polarized single-photon emission from an InGaN quantum dot in a GaN nanowire
Published 2013 View Full Article
- Home
- Publications
- Publication Search
- Publication Details
Title
Electrically driven polarized single-photon emission from an InGaN quantum dot in a GaN nanowire
Authors
Keywords
-
Journal
Nature Communications
Volume 4, Issue 1, Pages -
Publisher
Springer Nature
Online
2013-04-10
DOI
10.1038/ncomms2691
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- Room temperature single photon emission from an epitaxially grown quantum dot
- (2012) O. Fedorych et al. APPLIED PHYSICS LETTERS
- Single photon emission from InGaN/GaN quantum dots up to 50 K
- (2012) Stefan Kremling et al. APPLIED PHYSICS LETTERS
- Ultrafast Room Temperature Single-Photon Source from Nanowire-Quantum Dots
- (2012) S. Bounouar et al. NANO LETTERS
- Bright single-photon sources in bottom-up tailored nanowires
- (2012) Michael E. Reimer et al. Nature Communications
- InGaN/GaN disk-in-nanowire white light emitting diodes on (001) silicon
- (2011) Wei Guo et al. APPLIED PHYSICS LETTERS
- Auger Recombination in III-Nitride Nanowires and Its Effect on Nanowire Light-Emitting Diode Characteristics
- (2011) Wei Guo et al. NANO LETTERS
- Electrically driven quantum dot-micropillar single photon source with 34% overall efficiency
- (2010) T. Heindel et al. APPLIED PHYSICS LETTERS
- An electrically injected quantum dot spin polarized single photon source
- (2010) Pallab Bhattacharya et al. APPLIED PHYSICS LETTERS
- GaN Nanowires Grown by Molecular Beam Epitaxy
- (2010) Kris A. Bertness et al. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
- Steady-state and transient photoconductivity in c-axis GaN nanowires grown by nitrogen-plasma-assisted molecular beam epitaxy
- (2010) N. A. Sanford et al. JOURNAL OF APPLIED PHYSICS
- Catalyst-Free InGaN/GaN Nanowire Light Emitting Diodes Grown on (001) Silicon by Molecular Beam Epitaxy
- (2010) Wei Guo et al. NANO LETTERS
- Nucleation mechanisms of epitaxial GaN nanowires: Origin of their self-induced formation and initial radius
- (2010) V. Consonni et al. PHYSICAL REVIEW B
- Deep level optical spectroscopy of GaN nanorods
- (2009) A. Armstrong et al. JOURNAL OF APPLIED PHYSICS
- A growth diagram for plasma-assisted molecular beam epitaxy of GaN nanocolumns on Si(111)
- (2009) S. Fernández-Garrido et al. JOURNAL OF APPLIED PHYSICS
- Nucleation mechanism of GaN nanowires grown on (111) Si by molecular beam epitaxy
- (2009) O Landré et al. NANOTECHNOLOGY
- A highly efficient single-photon source based on a quantum dot in a photonic nanowire
- (2009) Julien Claudon et al. Nature Photonics
- Electrically driven single quantum dot emitter operating at room temperature
- (2008) R. Arians et al. APPLIED PHYSICS LETTERS
- Mechanism for spontaneous growth of GaN nanowires with molecular beam epitaxy
- (2008) K.A. Bertness et al. JOURNAL OF CRYSTAL GROWTH
- Exciton and Biexciton Luminescence from Single GaN/AlN Quantum Dots in Nanowires
- (2008) Julien Renard et al. NANO LETTERS
Become a Peeref-certified reviewer
The Peeref Institute provides free reviewer training that teaches the core competencies of the academic peer review process.
Get StartedAsk a Question. Answer a Question.
Quickly pose questions to the entire community. Debate answers and get clarity on the most important issues facing researchers.
Get Started