Electronic structure of a single-layer InN quantum well in a GaN matrix

Hybrid functional investigations of band gaps and band alignments for AlN, GaN, InN, and InGaN

(2011) Poul Georg Moses et al.   JOURNAL OF CHEMICAL PHYSICS

Band bowing and band alignment in InGaN alloys

(2010) Poul Georg Moses et al.   APPLIED PHYSICS LETTERS

Fabrication of Asymmetric GaN/InN/InGaN/GaN Quantum-Well Light Emitting Diodes for Reducing the Quantum-Confined Stark Effect in the Blue-Green Region

(2009) Songbek Che et al.   Applied Physics Express

Strain effects in group-III nitrides: Deformation potentials for AlN, GaN, and InN

(2009) Qimin Yan et al.   APPLIED PHYSICS LETTERS

Advances in InN epitaxy and its material control by MBE towards novel InN-based QWs

(2008) Akihiko Yoshikawa et al.   JOURNAL OF CRYSTAL GROWTH

Fabrication and characterization of novel monolayer InN quantum wells in a GaN matrix

(2008) A. Yoshikawa et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B

Growth and properties of near-UV light emitting diodes based on InN/GaN quantum wells

(2008) E. Dimakis et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Consistent set of band parameters for the group-III nitrides AlN, GaN, and InN

(2008) Patrick Rinke et al.   PHYSICAL REVIEW B