Effects of Moisture on the Switching Characteristics of Oxide-Based, Gapless-Type Atomic Switches
Published 2011 View Full Article
- Home
- Publications
- Publication Search
- Publication Details
Title
Effects of Moisture on the Switching Characteristics of Oxide-Based, Gapless-Type Atomic Switches
Authors
Keywords
-
Journal
ADVANCED FUNCTIONAL MATERIALS
Volume 22, Issue 1, Pages 70-77
Publisher
Wiley
Online
2011-10-14
DOI
10.1002/adfm.201101846
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- Nanoionics Switching Devices: “Atomic Switches”
- (2011) Tsuyoshi Hasegawa et al. MRS BULLETIN
- Temperature effects on the switching kinetics of a Cu–Ta2O5-based atomic switch
- (2011) Tohru Tsuruoka et al. NANOTECHNOLOGY
- Electrochemical metallization memories—fundamentals, applications, prospects
- (2011) Ilia Valov et al. NANOTECHNOLOGY
- Atomic switches: atomic-movement-controlled nanodevices for new types of computing
- (2011) Takami Hino et al. SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS
- The Effects of Moisture in Low-Voltage Organic Field-Effect Transistors Gated with a Hydrous Solid Electrolyte
- (2010) Nikolai Kaihovirta et al. ADVANCED FUNCTIONAL MATERIALS
- A Polymer-Electrolyte-Based Atomic Switch
- (2010) Shouming Wu et al. ADVANCED FUNCTIONAL MATERIALS
- Volatile/Nonvolatile Dual-Functional Atom Transistor
- (2010) Tsuyoshi Hasegawa et al. Applied Physics Express
- Resistance switching of Cu/SiO2 memory cells studied under voltage and current-driven modes
- (2010) Y. Bernard et al. APPLIED PHYSICS LETTERS
- Thermodynamic analysis of moisture absorption phenomena in high-permittivity oxides as gate dielectrics of advanced complementary-metal-oxide-semiconductor devices
- (2010) Yi Zhao et al. APPLIED PHYSICS LETTERS
- The Resistive Switching Mechanism of Ag/SrTiO[sub 3]/Pt Memory Cells
- (2010) X. B. Yan et al. ELECTROCHEMICAL AND SOLID STATE LETTERS
- Evaluation of the Adsorption States of H2O on Oxide Surfaces by Vibrational Absorption: Near- and Mid-Infrared Spectroscopy
- (2010) Masato Takeuchi et al. JOURNAL OF NEAR INFRARED SPECTROSCOPY
- Forming and switching mechanisms of a cation-migration-based oxide resistive memory
- (2010) T Tsuruoka et al. NANOTECHNOLOGY
- Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges
- (2009) Rainer Waser et al. ADVANCED MATERIALS
- Impact of Cu Electrode on Switching Behavior in a Cu/HfO2/Pt Structure and Resultant Cu Ion Diffusion
- (2009) Masamitsu Haemori et al. Applied Physics Express
- Electrode kinetics of Cu–SiO2-based resistive switching cells: Overcoming the voltage-time dilemma of electrochemical metallization memories
- (2009) C. Schindler et al. APPLIED PHYSICS LETTERS
- Study of Multilevel Programming in Programmable Metallization Cell (PMC) Memory
- (2009) Ugo Russo et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Conductance switching in Ag2S devices fabricated byin situsulfurization
- (2009) M Morales-Masis et al. NANOTECHNOLOGY
- Faradaic currents during electroforming of resistively switching Ag–Ge–Se type electrochemical metallization memory cells
- (2009) Christina Schindler et al. PHYSICAL CHEMISTRY CHEMICAL PHYSICS
- Low current resistive switching in Cu–SiO2 cells
- (2008) C. Schindler et al. APPLIED PHYSICS LETTERS
- On the resistive switching mechanisms of Cu/ZrO2:Cu/Pt
- (2008) Weihua Guan et al. APPLIED PHYSICS LETTERS
Find Funding. Review Successful Grants.
Explore over 25,000 new funding opportunities and over 6,000,000 successful grants.
ExploreDiscover Peeref hubs
Discuss science. Find collaborators. Network.
Join a conversation