Effects of Ti Buffer Layer on Retention and Electrical Characteristics of Cu-Based Conductive-Bridge Random Access Memory (CBRAM)

Published 2014 View Full Article

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Title
Effects of Ti Buffer Layer on Retention and Electrical Characteristics of Cu-Based Conductive-Bridge Random Access Memory (CBRAM)
Authors
Keywords
-
Journal
ECS Solid State Letters
Volume 3, Issue 10, Pages P120-P122
Publisher
The Electrochemical Society
Online
2014-07-31
DOI
10.1149/2.0031410ssl

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