Investigation of the multilevel capability of TiN/Ti/HfO 2 /W resistive switching devices by sweep and pulse programming

Published 2018 View Full Article

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Title
Investigation of the multilevel capability of TiN/Ti/HfO 2 /W resistive switching devices by sweep and pulse programming
Authors
Keywords
RRAM devices, HfO, 2, Multilevel, Pulse programming
Journal
MICROELECTRONIC ENGINEERING
Volume 187-188, Issue -, Pages 148-153
Publisher
Elsevier BV
Online
2017-11-07
DOI
10.1016/j.mee.2017.11.007

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