Unipolar resistive switching with forming-free and self-rectifying effects in Cu/HfO2/n-Si devices

Forming-free and self-rectifying resistive switching of the simple Pt/TaOx/n-Si structure for access device-free high-density memory application

(2015) Shuang Gao et al.   Nanoscale

Tuning the switching behavior of binary oxide-based resistive memory devices by inserting an ultra-thin chemically active metal nanolayer: a case study on the Ta2O5–Ta system

(2015) Shuang Gao et al.   PHYSICAL CHEMISTRY CHEMICAL PHYSICS

Improvement of switching uniformity in HfOx-based resistive random access memory with a titanium film and effects of titanium on resistive switching behaviors

(2014) Sanghyun Ban et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Recent progress in resistive random access memories: Materials, switching mechanisms, and performance

(2014) F. Pan et al.   MATERIALS SCIENCE & ENGINEERING R-REPORTS

Influence of Carbon Alloying on the Thermal Stability and Resistive Switching Behavior of Copper-Telluride Based CBRAM Cells

(2013) Wouter Devulder et al.   ACS Applied Materials & Interfaces

Multiple Memory States in Resistive Switching Devices Through Controlled Size and Orientation of the Conductive Filament

(2013) S. Balatti et al.   ADVANCED MATERIALS

Fully CMOS-Compatible 1T1R Integration of Vertical Nanopillar GAA Transistor and Oxide-Based RRAM Cell for High-Density Nonvolatile Memory Application

(2013) Z. Fang et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Resistive switching with self-rectifying behavior in Cu/SiOx/Si structure fabricated by plasma-oxidation

(2013) G. S. Tang et al.   JOURNAL OF APPLIED PHYSICS

Nanoscale resistive switching devices: mechanisms and modeling

(2013) Yuchao Yang et al.   Nanoscale

Bipolar one diode–one resistor integration for high-density resistive memory applications

(2013) Yingtao Li et al.   Nanoscale

A Self-Rectifying Unipolar HfOx Based RRAM Using Doped Germanium Bottom Electrode

(2013) W. J. Liu et al.   ECS Solid State Letters

High Current Density and Nonlinearity Combination of Selection Device Based on TaOx/TiO2/TaOx Structure for One Selector–One Resistor Arrays

(2012) Wootae Lee et al.   ACS Nano

32 × 32 Crossbar Array Resistive Memory Composed of a Stacked Schottky Diode and Unipolar Resistive Memory

(2012) Gun Hwan Kim et al.   ADVANCED FUNCTIONAL MATERIALS

Complementary resistive switching in tantalum oxide-based resistive memory devices

(2012) Yuchao Yang et al.   APPLIED PHYSICS LETTERS

Investigation of One-Dimensional Thickness Scaling on $ \hbox{Cu/HfO}_{x}/\hbox{Pt}$ Resistive Switching Device Performance

(2012) Ming Wang et al.   IEEE ELECTRON DEVICE LETTERS

A Self-Rectifying $\hbox{AlO}_{y}$ Bipolar RRAM With Sub-50-$\mu\hbox{A}$ Set/Reset Current for Cross-Bar Architecture

(2012) X. A. Tran et al.   IEEE ELECTRON DEVICE LETTERS

A Self-Rectifying $\hbox{HfO}_{x}$ -Based Unipolar RRAM With NiSi Electrode

(2012) X. A. Tran et al.   IEEE ELECTRON DEVICE LETTERS

Self-Selection Unipolar $\hbox{HfO}_{x}$ -Based RRAM

(2012) X. A. Tran et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Bipolar resistive switching with self-rectifying effects in Al/ZnO/Si structure

(2012) C. Chen et al.   JOURNAL OF APPLIED PHYSICS

Observation of filament formation process of Cu/HfO2/Pt ReRAM structure by hard x-ray photoelectron spectroscopy under bias operation

(2012) Takahiro Nagata et al.   JOURNAL OF MATERIALS RESEARCH

Dynamic Processes of Resistive Switching in Metallic Filament-Based Organic Memory Devices

(2012) Shuang Gao et al.   Journal of Physical Chemistry C

Programmable complementary resistive switching behaviours of a plasma-oxidised titanium oxide nanolayer

(2012) Guangsheng Tang et al.   Nanoscale

Self-formed Schottky barrier induced selector-less RRAM for cross-point memory applications

(2012) Sangsu Park et al.   Physica Status Solidi-Rapid Research Letters

A study on low-power, nanosecond operation and multilevel bipolar resistance switching in Ti/ZrO2/Pt nonvolatile memory with 1T1R architecture

(2012) Ming-Chi Wu et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Observation of conducting filament growth in nanoscale resistive memories

(2012) Yuchao Yang et al.   Nature Communications

Bias application hard x-ray photoelectron spectroscopy study of forming process of Cu/HfO2/Pt resistive random access memory structure

(2011) T. Nagata et al.   APPLIED PHYSICS LETTERS

Electrode dependence of filament formation in HfO2 resistive-switching memory

(2011) Kuan-Liang Lin et al.   JOURNAL OF APPLIED PHYSICS

TiO2-based metal-insulator-metal selection device for bipolar resistive random access memory cross-point application

(2011) Jungho Shin et al.   JOURNAL OF APPLIED PHYSICS

Improved resistance switching in ZnO-based devices decorated with Ag nanoparticles

(2011) L Shi et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook

(2011) Kyung Min Kim et al.   NANOTECHNOLOGY

Bipolar resistive switching in Cu/AlN/Pt nonvolatile memory device

(2010) C. Chen et al.   APPLIED PHYSICS LETTERS

Complementary resistive switches for passive nanocrossbar memories

(2010) Eike Linn et al.   NATURE MATERIALS

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Impact of Cu Electrode on Switching Behavior in a Cu/HfO2/Pt Structure and Resultant Cu Ion Diffusion

(2009) Masamitsu Haemori et al.   Applied Physics Express

Self-rectifying effect in gold nanocrystal-embedded zirconium oxide resistive memory

(2009) Qingyun Zuo et al.   JOURNAL OF APPLIED PHYSICS

Si/a-Si Core/Shell Nanowires as Nonvolatile Crossbar Switches

(2008) Yajie Dong et al.   NANO LETTERS