HfO2/Ti Interface Mediated Conductive Filament Formation in RRAM: An Ab Initio Study

Published 2018 View Full Article

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Title
HfO2/Ti Interface Mediated Conductive Filament Formation in RRAM: An Ab Initio Study
Authors
Keywords
-
Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 65, Issue 2, Pages 507-513
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2018-01-05
DOI
10.1109/ted.2017.2785352

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