Resistive switching and conductance quantization in Ag/SiO2/indium tin oxide resistive memories
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Title
Resistive switching and conductance quantization in Ag/SiO2/indium tin oxide resistive memories
Authors
Keywords
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Journal
APPLIED PHYSICS LETTERS
Volume 105, Issue 6, Pages 063504
Publisher
AIP Publishing
Online
2014-08-14
DOI
10.1063/1.4893277
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Related references
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- (2013) Chengqing Hu et al. IEEE ELECTRON DEVICE LETTERS
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- (2013) I. Valov et al. Nature Communications
- Quantum Conductance in Silicon Oxide Resistive Memory Devices
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- Dynamic Processes of Resistive Switching in Metallic Filament-Based Organic Memory Devices
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- (2009) Rainer Waser et al. ADVANCED MATERIALS
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