Comparison of methods to quantify interface trap densities at dielectric/III-V semiconductor interfaces

Accumulation capacitance of narrow band gap metal-oxide-semiconductor capacitors

(2010) Erik Lind et al.   APPLIED PHYSICS LETTERS

Quantification of trap densities at dielectric/III–V semiconductor interfaces

(2010) Roman Engel-Herbert et al.   APPLIED PHYSICS LETTERS

Modeling the capacitance-voltage response of In0.53Ga0.47As metal-oxide-semiconductor structures: Charge quantization and nonparabolic corrections

(2010) T. P. O’Regan et al.   APPLIED PHYSICS LETTERS

Comparison of drive currents in metal-oxide-semiconductor field-effect transistors made of Si, Ge, GaAs, InGaAs, and InAs channels

(2010) Abigail Lubow et al.   APPLIED PHYSICS LETTERS

Analysis of trap state densities at HfO2/In0.53Ga0.47As interfaces

(2010) Yoontae Hwang et al.   APPLIED PHYSICS LETTERS

Border traps in Al2O3/In0.53Ga0.47As (100) gate stacks and their passivation by hydrogen anneals

(2010) Eun Ji Kim et al.   APPLIED PHYSICS LETTERS

Small-Signal Response of Inversion Layers in High-Mobility $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ MOSFETs Made With Thin High- $\kappa$ Dielectrics

(2010) Ashkar Ali et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Effect of postdeposition anneals on the Fermi level response of HfO2/In0.53Ga0.47As gate stacks

(2010) Yoontae Hwang et al.   JOURNAL OF APPLIED PHYSICS

Temperature and frequency dependent electrical characterization of HfO2/InxGa1−xAs interfaces using capacitance-voltage and conductance methods

(2009) É. O’Connor et al.   APPLIED PHYSICS LETTERS

Effects of gate-first and gate-last process on interface quality of In0.53Ga0.47As metal-oxide-semiconductor capacitors using atomic-layer-deposited Al2O3 and HfO2 oxides

(2009) Han Zhao et al.   APPLIED PHYSICS LETTERS

Metal-oxide-semiconductor capacitors with ZrO2 dielectrics grown on In0.53Ga0.47As by chemical beam deposition

(2009) Roman Engel-Herbert et al.   APPLIED PHYSICS LETTERS

The Fermi-level efficiency method and its applications on high interface trap density oxide-semiconductor interfaces

(2009) H. C. Lin et al.   APPLIED PHYSICS LETTERS

On the interface state density at In0.53Ga0.47As/oxide interfaces

(2009) G. Brammertz et al.   APPLIED PHYSICS LETTERS

$\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ Channel MOSFETs With Self-Aligned InAs Source/Drain Formed by MEE Regrowth

(2009) U. Singisetti et al.   IEEE ELECTRON DEVICE LETTERS

Atomically abrupt and unpinned Al2O3/In0.53Ga0.47As interfaces: Experiment and simulation

(2009) Eun Ji Kim et al.   JOURNAL OF APPLIED PHYSICS

Electrical study of sulfur passivated In0.53Ga0.47As MOS capacitor and transistor with ALD Al2O3 as gate insulator

(2009) Han-Chung Lin et al.   MICROELECTRONIC ENGINEERING

Inversion capacitance-voltage studies on GaAs metal-oxide-semiconductor structure using transparent conducting oxide as metal gate

(2008) T. Yang et al.   APPLIED PHYSICS LETTERS

In0.53Ga0.47As based metal oxide semiconductor capacitors with atomic layer deposition ZrO2 gate oxide demonstrating low gate leakage current and equivalent oxide thickness less than 1nm

(2008) S. Koveshnikov et al.   APPLIED PHYSICS LETTERS

Atomic-layer-deposited HfO2 on In0.53Ga0.47As: Passivation and energy-band parameters

(2008) Y. C. Chang et al.   APPLIED PHYSICS LETTERS

Achieving 1nm capacitive effective thickness in atomic layer deposited HfO2 on In0.53Ga0.47As

(2008) K. Y. Lee et al.   APPLIED PHYSICS LETTERS

Achieving a low interfacial density of states in atomic layer deposited Al2O3 on In0.53Ga0.47As

(2008) H. C. Chiu et al.   APPLIED PHYSICS LETTERS

Capacitance-voltage characterization of GaAs–Al2O3 interfaces

(2008) G. Brammertz et al.   APPLIED PHYSICS LETTERS

On the Correct Extraction of Interface Trap Density of MOS Devices With High-Mobility Semiconductor Substrates

(2008) Koen Martens et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Main determinants for III–V metal-oxide-semiconductor field-effect transistors (invited)

(2008) Peide D. Ye   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A