A Review on Dielectric Breakdown in Thin Dielectrics: Silicon Dioxide, High‐ k , and Layered Dielectrics
出版年份 2019 全文链接
标题
A Review on Dielectric Breakdown in Thin Dielectrics: Silicon Dioxide, High‐
k
, and Layered Dielectrics
作者
关键词
-
出版物
ADVANCED FUNCTIONAL MATERIALS
Volume -, Issue -, Pages 1900657
出版商
Wiley
发表日期
2019-05-01
DOI
10.1002/adfm.201900657
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- The interplay between structure and function in redox-based resistance switching
- (2018) Anthony Kenyon et al. FARADAY DISCUSSIONS
- Effect of forming gas annealing on the degradation properties of Ge-based MOS stacks
- (2018) F. Aguirre et al. JOURNAL OF APPLIED PHYSICS
- Conductive Atomic Force Microscope Study of Bipolar and Threshold Resistive Switching in 2D Hexagonal Boron Nitride Films
- (2018) A. Ranjan et al. Scientific Reports
- The interplay between structure and function in redox-based resistance switching
- (2018) Anthony Kenyon et al. FARADAY DISCUSSIONS
- Bimodal Dielectric Breakdown in Electronic Devices Using Chemical Vapor Deposited Hexagonal Boron Nitride as Dielectric
- (2018) Felix Palumbo et al. Advanced Electronic Materials
- Lack of correlation between C-V hysteresis and capacitance frequency dispersion in accumulation of metal gate/high-k/n-InGaAs metal-oxide-semiconductor stacks
- (2018) S. M. Pazos et al. JOURNAL OF APPLIED PHYSICS
- Electron energy dissipation model of gate dielectric progressive breakdown in n- and p-channel field effect transistors
- (2017) S. Lombardo et al. JOURNAL OF APPLIED PHYSICS
- Comparative study of the breakdown transients of thin Al2O3 and HfO2 films in MIM structures and their connection with the thermal properties of materials
- (2017) S. Pazos et al. JOURNAL OF APPLIED PHYSICS
- High-resolution characterization of hexagonal boron nitride coatings exposed to aqueous and air oxidative environments
- (2017) Lanlan Jiang et al. Nano Research
- Re-distribution of oxygen at the interface between γ-Al2O3 and TiN
- (2017) E. O. Filatova et al. Scientific Reports
- Boron nitride as two dimensional dielectric: Reliability and dielectric breakdown
- (2016) Yanfeng Ji et al. APPLIED PHYSICS LETTERS
- HfO2-Based RRAM: Electrode Effects, Ti/HfO2 Interface, Charge Injection, and Oxygen (O) Defects Diffusion Through Experiment and Ab Initio Calculations
- (2016) Boubacar Traore et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- On the use of two dimensional hexagonal boron nitride as dielectric
- (2016) Fei Hui et al. MICROELECTRONIC ENGINEERING
- Deep-submicron Graphene Field-Effect Transistors with State-of-Art f max
- (2016) Hongming Lyu et al. Scientific Reports
- Synthesis of atomically thin hexagonal boron nitride films on nickel foils by molecular beam epitaxy
- (2015) S. Nakhaie et al. APPLIED PHYSICS LETTERS
- High-K materials and metal gates for CMOS applications
- (2015) John Robertson et al. MATERIALS SCIENCE & ENGINEERING R-REPORTS
- Transition metal dichalcogenide and hexagonal boron nitride heterostructures grown by molecular beam epitaxy
- (2015) A.T. Barton et al. MICROELECTRONIC ENGINEERING
- Science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems
- (2015) Andrea C. Ferrari et al. Nanoscale
- Nanomaterials in transistors: From high-performance to thin-film applications
- (2015) A. D. Franklin SCIENCE
- Conductive filament structure in HfO2 resistive switching memory devices
- (2015) S. Privitera et al. SOLID-STATE ELECTRONICS
- Modelling heat conduction in polycrystalline hexagonal boron-nitride films
- (2015) Bohayra Mortazavi et al. Scientific Reports
- Layer-by-Layer Dielectric Breakdown of Hexagonal Boron Nitride
- (2014) Yoshiaki Hattori et al. ACS Nano
- Physical mechanism of progressive breakdown in gate oxides
- (2014) Felix Palumbo et al. JOURNAL OF APPLIED PHYSICS
- Degradation characteristics of metal/Al2O3/n-InGaAs capacitors
- (2014) F. Palumbo et al. JOURNAL OF APPLIED PHYSICS
- Structural instabilities and wrinkles at the grain boundaries in 2-D h-BN: a first-principles analysis
- (2014) Anjali Singh et al. PHYSICAL CHEMISTRY CHEMICAL PHYSICS
- Electrochemical dynamics of nanoscale metallic inclusions in dielectrics
- (2014) Yuchao Yang et al. Nature Communications
- HfO2 on MoS2 by Atomic Layer Deposition: Adsorption Mechanisms and Thickness Scalability
- (2013) Stephen McDonnell et al. ACS Nano
- High-Performance, Highly Bendable MoS2 Transistors with High-K Dielectrics for Flexible Low-Power Systems
- (2013) Hsiao-Yu Chang et al. ACS Nano
- 25 GHz Embedded-Gate Graphene Transistors with High-K Dielectrics on Extremely Flexible Plastic Sheets
- (2013) Jongho Lee et al. ACS Nano
- Exfoliation of Hexagonal Boron Nitride by Molten Hydroxides
- (2013) Xianlei Li et al. ADVANCED MATERIALS
- WSe2 field effect transistors with enhanced ambipolar characteristics
- (2013) Saptarshi Das et al. APPLIED PHYSICS LETTERS
- Modeling of time-dependent non-uniform dielectric breakdown using a clustering statistical approach
- (2013) Ernest Y. Wu et al. APPLIED PHYSICS LETTERS
- Leakage current through the poly-crystalline HfO2: Trap densities at grains and grain boundaries
- (2013) Onofrio Pirrotta et al. JOURNAL OF APPLIED PHYSICS
- Size-dependence of the dielectric breakdown strength from nano- to millimeter scale
- (2013) Claudia Neusel et al. JOURNAL OF THE MECHANICS AND PHYSICS OF SOLIDS
- Bimodal CAFM TDDB distributions in polycrystalline HfO2 gate stacks: The role of the interfacial layer and grain boundaries
- (2013) V. Iglesias et al. MICROELECTRONIC ENGINEERING
- Microscopy study of the conductive filament in HfO2 resistive switching memory devices
- (2013) S. Privitera et al. MICROELECTRONIC ENGINEERING
- Fabrication of large area hexagonal boron nitride thin films for bendable capacitors
- (2013) Ning Guo et al. Nano Research
- Ultrathin high-temperature oxidation-resistant coatings of hexagonal boron nitride
- (2013) Zheng Liu et al. Nature Communications
- Synthesis and Characterization of Hexagonal Boron Nitride Film as a Dielectric Layer for Graphene Devices
- (2012) Ki Kang Kim et al. ACS Nano
- Inkjet-Printed Graphene Electronics
- (2012) Felice Torrisi et al. ACS Nano
- Dislocations and Grain Boundaries in Two-Dimensional Boron Nitride
- (2012) Yuanyue Liu et al. ACS Nano
- Photoluminescence of boron nitride nanosheets exfoliated by ball milling
- (2012) Lu Hua Li et al. APPLIED PHYSICS LETTERS
- Grain boundaries as preferential sites for resistive switching in the HfO2 resistive random access memory structures
- (2012) M. Lanza et al. APPLIED PHYSICS LETTERS
- Resistive switching in hafnium dioxide layers: Local phenomenon at grain boundaries
- (2012) M. Lanza et al. APPLIED PHYSICS LETTERS
- Formation and Characterization of Filamentary Current Paths in $\hbox{HfO}_{2}$-Based Resistive Switching Structures
- (2012) F. Palumbo et al. IEEE ELECTRON DEVICE LETTERS
- Integrated Circuits Based on Bilayer MoS2 Transistors
- (2012) Han Wang et al. NANO LETTERS
- Effective Cleaning of Hexagonal Boron Nitride for Graphene Devices
- (2012) Andrei G. F. Garcia et al. NANO LETTERS
- State-of-the-Art Graphene High-Frequency Electronics
- (2012) Yanqing Wu et al. NANO LETTERS
- Electron Tunneling through Ultrathin Boron Nitride Crystalline Barriers
- (2012) Liam Britnell et al. NANO LETTERS
- Scalable Synthesis of Uniform Few-Layer Hexagonal Boron Nitride Dielectric Films
- (2012) P. Sutter et al. NANO LETTERS
- Vertical field-effect transistor based on graphene–WS2 heterostructures for flexible and transparent electronics
- (2012) Thanasis Georgiou et al. Nature Nanotechnology
- Two-dimensional crystals-based heterostructures: materials with tailored properties
- (2012) K S Novoselov et al. PHYSICA SCRIPTA
- Converting Graphene Oxide Monolayers into Boron Carbonitride Nanosheets by Substitutional Doping
- (2012) Tsung-Wu Lin et al. Small
- Electron tunneling through atomically flat and ultrathin hexagonal boron nitride
- (2011) Gwan-Hyoung Lee et al. APPLIED PHYSICS LETTERS
- Chemical Vapor Deposition of Boron Nitride Nanosheets on Metallic Substrates via Decaborane/Ammonia Reactions
- (2011) Shahana Chatterjee et al. CHEMISTRY OF MATERIALS
- A Comprehensive LER-Aware TDDB Lifetime Model for Advanced Cu Interconnects
- (2011) Michele Stucchi et al. IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY
- Large-scale mechanical peeling of boron nitride nanosheets by low-energy ball milling
- (2011) Lu Hua Li et al. JOURNAL OF MATERIALS CHEMISTRY
- How Good Can Monolayer MoS2Transistors Be?
- (2011) Youngki Yoon et al. NANO LETTERS
- Nanometre-scale electronics with III–V compound semiconductors
- (2011) Jesús A. del Alamo NATURE
- Single-layer MoS2 transistors
- (2011) B. Radisavljevic et al. Nature Nanotechnology
- Enhanced thermal conductivity and isotope effect in single-layer hexagonal boron nitride
- (2011) L. Lindsay et al. PHYSICAL REVIEW B
- Grain boundary-driven leakage path formation in HfO2 dielectrics
- (2011) G. Bersuker et al. SOLID-STATE ELECTRONICS
- Polycrystallization effects on the nanoscale electrical properties of high-k dielectrics
- (2011) Mario Lanza et al. Nanoscale Research Letters
- MoS2 and WS2 Analogues of Graphene
- (2010) H. S. S. Ramakrishna Matte et al. ANGEWANDTE CHEMIE-INTERNATIONAL EDITION
- Electrode material dependent breakdown and recovery in advanced high-κ gate stacks
- (2010) X. Wu et al. APPLIED PHYSICS LETTERS
- Role of oxygen vacancies in HfO2-based gate stack breakdown
- (2010) X. Wu et al. APPLIED PHYSICS LETTERS
- Comparison of methods to quantify interface trap densities at dielectric/III-V semiconductor interfaces
- (2010) Roman Engel-Herbert et al. JOURNAL OF APPLIED PHYSICS
- UHV CAFM characterization of high-k dielectrics: Effect of the technique resolution on the pre- and post-breakdown electrical measurements
- (2010) M. Lanza et al. MICROELECTRONICS RELIABILITY
- Large Scale Growth and Characterization of Atomic Hexagonal Boron Nitride Layers
- (2010) Li Song et al. NANO LETTERS
- Note: Electrical resolution during conductive atomic force microscopy measurements under different environmental conditions and contact forces
- (2010) M. Lanza et al. REVIEW OF SCIENTIFIC INSTRUMENTS
- Thermal Properties of Ultrathin Hafnium Oxide Gate Dielectric Films
- (2009) M.A. Panzer et al. IEEE ELECTRON DEVICE LETTERS
- Filament Conduction and Reset Mechanism in NiO-Based Resistive-Switching Memory (RRAM) Devices
- (2009) Ugo Russo et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- The nature of dielectric breakdown
- (2008) X. Li et al. APPLIED PHYSICS LETTERS
- The two-dimensional phase of boron nitride: Few-atomic-layer sheets and suspended membranes
- (2008) D. Pacilé et al. APPLIED PHYSICS LETTERS
- Atomic Layer Deposition of Metal Oxides on Pristine and Functionalized Graphene
- (2008) Xinran Wang et al. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
- A novel approach to characterization of progressive breakdown in high-k/metal gate stacks
- (2008) R. Pagano et al. MICROELECTRONICS RELIABILITY
Become a Peeref-certified reviewer
The Peeref Institute provides free reviewer training that teaches the core competencies of the academic peer review process.
Get StartedAsk a Question. Answer a Question.
Quickly pose questions to the entire community. Debate answers and get clarity on the most important issues facing researchers.
Get Started