Effect of forming gas annealing on the degradation properties of Ge-based MOS stacks

HfxAlyO ternary dielectrics for InGaAs based metal-oxide-semiconductor capacitors

(2017) Igor Krylov et al.   JOURNAL OF APPLIED PHYSICS

Passivation of Ge/high-κ interface using RF Plasma nitridation

(2017) Ghada Dushaq et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Growth, structural, and electrical properties of germanium-on-silicon heterostructure by molecular beam epitaxy

(2017) Aheli Ghosh et al.   AIP Advances

Ge(001) surface cleaning methods for device integration

(2017) P. Ponath et al.   Applied Physics Reviews

Effect of Remote Oxygen Scavenging on Electrical Properties of Ge-Based Metal–Oxide–Semiconductor Capacitors

(2016) Sivan Fadida et al.   JOURNAL OF ELECTRONIC MATERIALS

Selective Passivation of GeO2/Ge Interface Defects in Atomic Layer Deposited High-k MOS Structures

(2015) Liangliang Zhang et al.   ACS Applied Materials & Interfaces

Comparison of the degradation characteristics of AlON/InGaAs and Al2O3/InGaAs stacks

(2015) F. Palumbo et al.   JOURNAL OF APPLIED PHYSICS

Degradation characteristics of metal/Al2O3/n-InGaAs capacitors

(2014) F. Palumbo et al.   JOURNAL OF APPLIED PHYSICS

NBTI Reliability of SiGe and Ge Channel pMOSFETs With $ \hbox{SiO}_{2}/\hbox{HfO}_{2}$ Dielectric Stack

(2013) Jacopo Franco et al.   IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY

An investigation of capacitance-voltage hysteresis in metal/high-k/In0.53Ga0.47As metal-oxide-semiconductor capacitors

(2013) Jun Lin et al.   JOURNAL OF APPLIED PHYSICS

Realization of high-quality HfO2 on In0.53Ga0.47As by in-situ atomic-layer-deposition

(2012)   APPLIED PHYSICS LETTERS

Correlation between Ga-O signature and midgap states at the Al2O3/In0.53Ga0.47As interface

(2012) Igor Krylov et al.   APPLIED PHYSICS LETTERS

SiGe Channel Technology: Superior Reliability Toward Ultrathin EOT Devices—Part I: NBTI

(2012) Jacopo Franco et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Interaction of metal impurities with native oxygen defects in GeO2

(2012) E. Golias et al.   MICROELECTRONIC ENGINEERING

Germanium surface passivation and atomic layer deposition of high-kdielectrics—a tutorial review on Ge-based MOS capacitors

(2012) Qi Xie et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Analysis of the minority carrier response of n-type and p-type Au/Ni/Al2O3/In0.53Ga0.47As/InP capacitors following an optimized (NH4)2S treatment

(2011) É. O’Connor et al.   APPLIED PHYSICS LETTERS

Ultrathin ALD-Al2O3 layers for Ge(001) gate stacks: Local composition evolution and dielectric properties

(2011) Shankar Swaminathan et al.   JOURNAL OF APPLIED PHYSICS

Band alignment of Hf–Zr oxides on Al2O3/GeO2/Ge stacks

(2011) S. Fadida et al.   MICROELECTRONIC ENGINEERING

Nanometre-scale electronics with III–V compound semiconductors

(2011) Jesús A. del Alamo   NATURE

The influences of surface treatment and gas annealing conditions on the inversion behaviors of the atomic-layer-deposition Al2O3/n-In0.53Ga0.47As metal-oxide-semiconductor capacitor

(2010) H. D. Trinh et al.   APPLIED PHYSICS LETTERS

Comparison of methods to quantify interface trap densities at dielectric/III-V semiconductor interfaces

(2010) Roman Engel-Herbert et al.   JOURNAL OF APPLIED PHYSICS

Evidence of low interface trap density in GeO2∕Ge metal-oxide-semiconductor structures fabricated by thermal oxidation

(2008) Hiroshi Matsubara et al.   APPLIED PHYSICS LETTERS

Ge-Interface Engineering With Ozone Oxidation for Low Interface-State Density

(2008) Duygu Kuzum et al.   IEEE ELECTRON DEVICE LETTERS

Scanning capacitance microscopy detection of charge trapping in free-standing germanium nanodots and the passivation of hole trap sites

(2008) K. M. Wong et al.   JOURNAL OF APPLIED PHYSICS

Chemical Bonding, Interfaces, and Defects in Hafnium Oxide∕Germanium Oxynitride Gate Stacks on Ge(100)

(2008) Yasuhiro Oshima et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Germanium MOSFET Devices: Advances in Materials Understanding, Process Development, and Electrical Performance

(2008) D. P. Brunco et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY