Re-distribution of oxygen at the interface between γ-Al2O3 and TiN

Metallization-Induced Oxygen Deficiency of γ-Al2O3 Layers

(2016) Elena O. Filatova et al.   Journal of Physical Chemistry C

Interpretation of the Changing the Band Gap of Al2O3 Depending on Its Crystalline Form: Connection with Different Local Symmetries

(2015) Elena O. Filatova et al.   Journal of Physical Chemistry C

Mechanism of Date Retention Improvement by High Temperature Annealing of Al2O3Blocking Layer in Flash Memory Device

(2013) Jong Kyung Park et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

X-ray spectroscopic study of SrTiOx films with different interlayers

(2013) E. O. Filatova et al.   JOURNAL OF APPLIED PHYSICS

Modulation of electron barriers between TiNxand oxide insulators (SiO2, Al2O3) using Ti interlayer

(2013) Francesca De Stefano et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Study of Al2O3 nanolayers synthesized onto porous SiO2 using X-ray reflection spectroscopy

(2013) A.S. Konashuk et al.   THIN SOLID FILMS

Investigation of the band offsets caused by thin Al2O3 layers in HfO2 based Si metal oxide semiconductor devices

(2012) Lior Kornblum et al.   APPLIED PHYSICS LETTERS

Significant increase in conduction band discontinuity due to solid phase epitaxy of Al2O3 gate insulator films on GaN semiconductor

(2012) S. Toyoda et al.   APPLIED PHYSICS LETTERS

A complete and self-consistent evaluation of XPS spectra of TiN

(2012) Dominik Jaeger et al.   JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA

Effects of high-temperature O2annealing on Al2O3blocking layer and Al2O3/Si3N4interface for MANOS structures

(2012) Zhongguang Xu et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Soft x-ray reflectometry, hard x-ray photoelectron spectroscopy and transmission electron microscopy investigations of the internal structure of TiO2(Ti)/SiO2/Si stacks

(2012) Elena O Filatova et al.   SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS

The influence of porous silica substrate on the properties of alumina films studied by X-ray reflection spectroscopy

(2012) A. S. Konashuk et al.   TECHNICAL PHYSICS LETTERS

TiNx/HfO2 interface dipole induced by oxygen scavenging

(2011) V. V. Afanas’ev et al.   APPLIED PHYSICS LETTERS

Influence of Al2O3 crystallization on band offsets at interfaces with Si and TiNx

(2011) V. V. Afanas'ev et al.   APPLIED PHYSICS LETTERS

Towards barrier height modulation in HfO2/TiN by oxygen scavenging – Dielectric defects or metal induced gap states?

(2011) Luigi Pantisano et al.   MICROELECTRONIC ENGINEERING

Modulations in effective work function of platinum gate electrode in metal-oxide-semiconductor devices

(2011) S. V. Jagadeesh Chandra et al.   THIN SOLID FILMS

Controlled Nitrogen Doping and Film Colorimetrics in Porous TiO2 Materials Using Plasma Processing

(2010) Daniel J. V. Pulsipher et al.   ACS Applied Materials & Interfaces

Applying Complementary Trap Characterization Technique to Crystalline $\gamma$-Phase-$\hbox{Al}_{2} \hbox{O}_{3}$ for Improved Understanding of Nonvolatile Memory Operation and Reliability

(2010) Mohammed B. Zahid et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Enhancement in interface robustness regarding thermal oxidation in nanostructured Al2O3 deposited on 4H-SiC

(2009) S. A. Corrêa et al.   APPLIED PHYSICS LETTERS

High-k dielectrics for future generation memory devices (Invited Paper)

(2009) J.A. Kittl et al.   MICROELECTRONIC ENGINEERING

The high kinetic energy photoelectron spectroscopy facility at BESSY progress and first results

(2009) M. Gorgoi et al.   NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT

Ab initiostudy of the physical properties ofγ-Al2O3: Lattice dynamics, bulk properties, electronic structure, bonding, optical properties, and ELNES/XANES spectra

(2008) W. Y. Ching et al.   PHYSICAL REVIEW B