Effect of Al doping on the retention behavior of HfO2 resistive switching memories

Published 2015 View Full Article

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Title
Effect of Al doping on the retention behavior of HfO2 resistive switching memories
Authors
Keywords
RRAM, Hafnium oxide, Aluminum, Doping, Retention
Journal
MICROELECTRONIC ENGINEERING
Volume 147, Issue -, Pages 104-107
Publisher
Elsevier BV
Online
2015-04-12
DOI
10.1016/j.mee.2015.04.043

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