Formation and disruption of conductive filaments in a HfO2/TiN structure

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(2016)   ADVANCED MATERIALS

Phase Stabilization of Al:HfO2 Grown on InxGa1–xAs Substrates (x = 0, 0.15, 0.53) via Trimethylaluminum-Based Atomic Layer Deposition

(2014) Elena Cianci et al.   ACS Applied Materials & Interfaces

A Review on Resistive Switching in High-k Dielectrics: A Nanoscale Point of View Using Conductive Atomic Force Microscope

(2014) Mario Lanza   Materials

Lightning rod effect in surface work function of semiconductor nanomaterials

(2013) Mingshan Xue et al.   APPLIED PHYSICS LETTERS

Bipolar resistive switching of Au/NiOx/Ni/Au heterostructure nanowires

(2013) S. Brivio et al.   APPLIED PHYSICS LETTERS

Filament observation in metal-oxide resistive switching devices

(2013) Umberto Celano et al.   APPLIED PHYSICS LETTERS

Scanning probe microscopy as a scalpel to probe filament formation in conductive bridging memory devices

(2013) Umberto Celano et al.   MICROELECTRONIC ENGINEERING

Mechanical Control of Electroresistive Switching

(2013) Yunseok Kim et al.   NANO LETTERS

Chemical and structural properties of conducting nanofilaments in TiN/HfO2-based resistive switching structures

(2013) P Calka et al.   NANOTECHNOLOGY

Effects of Thermal Treatments on the Trapping Properties of HfO$_{2}$ Films for Charge Trap Memories

(2012) Sabina Spiga et al.   Applied Physics Express

Low-power resistive switching in Au/NiO/Au nanowire arrays

(2012) S. Brivio et al.   APPLIED PHYSICS LETTERS

Grain boundaries as preferential sites for resistive switching in the HfO2 resistive random access memory structures

(2012) M. Lanza et al.   APPLIED PHYSICS LETTERS

Nanoscale observations of resistive switching high and low conductivity states on TiN/HfO2/Pt structures

(2012) V. Iglesias et al.   MICROELECTRONICS RELIABILITY

Transport properties of oxygen vacancy filaments in metal/crystalline or amorphous HfO2/metal structures

(2012) Xavier Cartoixà et al.   PHYSICAL REVIEW B

Direct Observation at Nanoscale of Resistance Switching in NiO Layers by Conductive-Atomic Force Microscopy

(2011) Damien Deleruyelle et al.   Applied Physics Express

Nonlinear current-voltage behavior of the isolated resistive switching filamentary channels in CuC nanolayer

(2011) Doo-In Kim et al.   APPLIED PHYSICS LETTERS

Good Endurance and Memory Window for $ \hbox{Ti/HfO}_{x}$ Pillar RRAM at 50-nm Scale by Optimal Encapsulation Layer

(2011) Yu-Sheng Chen et al.   IEEE ELECTRON DEVICE LETTERS

Scaling analysis of submicrometer nickel-oxide-based resistive switching memory devices

(2011) D. Ielmini et al.   JOURNAL OF APPLIED PHYSICS

Metal oxide resistive memory switching mechanism based on conductive filament properties

(2011) G. Bersuker et al.   JOURNAL OF APPLIED PHYSICS

A Phenomenological Model for the Reset Mechanism of Metal Oxide RRAM

(2010) Shimeng Yu et al.   IEEE ELECTRON DEVICE LETTERS

Atomic structure of conducting nanofilaments in TiO2 resistive switching memory

(2010) Deok-Hwang Kwon et al.   Nature Nanotechnology

The interaction of oxygen vacancies with grain boundaries in monoclinic HfO2

(2009) Keith McKenna et al.   APPLIED PHYSICS LETTERS

Unified Physical Model of Bipolar Oxide-Based Resistive Switching Memory

(2009) Bin Gao et al.   IEEE ELECTRON DEVICE LETTERS

The role of the HfO2–TiN interface in capacitance–voltage nonlinearity of Metal-Insulator-Metal capacitors

(2009) Ch. Wenger et al.   THIN SOLID FILMS

Epitaxial BiAlO3 thin film as a lead-free ferroelectric material

(2008) J. Y. Son et al.   APPLIED PHYSICS LETTERS