On the Gradual Unipolar and Bipolar Resistive Switching of TiN\HfO[sub 2]\Pt Memory Systems

Coexistence of the bipolar and unipolar resistive-switching modes in NiO cells made by thermal oxidation of Ni layers

(2010) L. Goux et al.   JOURNAL OF APPLIED PHYSICS

Resistance transition in metal oxides induced by electronic threshold switching

(2009) D. Ielmini et al.   APPLIED PHYSICS LETTERS

Optimized Ni Oxidation in 80-nm Contact Holes for Integration of Forming-Free and Low-Power Ni/NiO/Ni Memory Cells

(2009) Ludovic Goux et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Electrical Manipulation of Nanofilaments in Transition-Metal Oxides for Resistance-Based Memory

(2009) Myoung-Jae Lee et al.   NANO LETTERS

Electrical evidence of unstable anodic interface in Ru∕HfOx∕TiN unipolar resistive memory

(2008) Heng Yuan Lee et al.   APPLIED PHYSICS LETTERS

Reproducible resistance switching characteristics of hafnium oxide-based nonvolatile memory devices

(2008) Yong-Mu Kim et al.   JOURNAL OF APPLIED PHYSICS