Phase Stabilization of Al:HfO2 Grown on InxGa1–xAs Substrates (x = 0, 0.15, 0.53) via Trimethylaluminum-Based Atomic Layer Deposition

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Title
Phase Stabilization of Al:HfO2 Grown on InxGa1–xAs Substrates (x = 0, 0.15, 0.53) via Trimethylaluminum-Based Atomic Layer Deposition
Authors
Keywords
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Journal
ACS Applied Materials & Interfaces
Volume 6, Issue 5, Pages 3455-3461
Publisher
American Chemical Society (ACS)
Online
2014-02-11
DOI
10.1021/am405617q

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