Forming-Free Reversible Bipolar Resistive Switching Behavior in Al-Doped HfO2 Metal–Insulator–Metal Devices

Ionic doping effect in ZrO2 resistive switching memory

(2010) Haowei Zhang et al.   APPLIED PHYSICS LETTERS

Resistance switching in HfO2 metal-insulator-metal devices

(2010) P. Gonon et al.   JOURNAL OF APPLIED PHYSICS

Pulse-induced low-power resistive switching in HfO2 metal-insulator-metal diodes for nonvolatile memory applications

(2009) Ch. Walczyk et al.   JOURNAL OF APPLIED PHYSICS

Electrical evidence of unstable anodic interface in Ru∕HfOx∕TiN unipolar resistive memory

(2008) Heng Yuan Lee et al.   APPLIED PHYSICS LETTERS

Reproducible resistance switching characteristics of hafnium oxide-based nonvolatile memory devices

(2008) Yong-Mu Kim et al.   JOURNAL OF APPLIED PHYSICS

Effect of Al and Y incorporation on the structure of HfO2

(2008) X. F. Wang et al.   JOURNAL OF APPLIED PHYSICS