Resistive switching and synaptic properties of fully atomic layer deposition grown TiN/HfO2/TiN devices

Title
Resistive switching and synaptic properties of fully atomic layer deposition grown TiN/HfO2/TiN devices
Authors
Keywords
-
Journal
JOURNAL OF APPLIED PHYSICS
Volume 117, Issue 4, Pages 044901
Publisher
AIP Publishing
Online
2015-01-27
DOI
10.1063/1.4905792

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