Resistive switching and synaptic properties of fully atomic layer deposition grown TiN/HfO2/TiN devices
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Title
Resistive switching and synaptic properties of fully atomic layer deposition grown TiN/HfO2/TiN devices
Authors
Keywords
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Journal
JOURNAL OF APPLIED PHYSICS
Volume 117, Issue 4, Pages 044901
Publisher
AIP Publishing
Online
2015-01-27
DOI
10.1063/1.4905792
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Note: Only part of the references are listed.- A Review of Three-Dimensional Resistive Switching Cross-Bar Array Memories from the Integration and Materials Property Points of View
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- (2014) L. Zhao et al. Nanoscale
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- (2014) Yu.А. Matveyev et al. THIN SOLID FILMS
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- (2014) Saptarshi Mandal et al. Scientific Reports
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- (2013) Shimeng Yu et al. ADVANCED MATERIALS
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- (2013) S. G. Hu et al. APPLIED PHYSICS LETTERS
- Synaptic electronics: materials, devices and applications
- (2013) Duygu Kuzum et al. NANOTECHNOLOGY
- Pattern classification by memristive crossbar circuits using ex situ and in situ training
- (2013) Fabien Alibart et al. Nature Communications
- Ultrafast Synaptic Events in a Chalcogenide Memristor
- (2013) Yi Li et al. Scientific Reports
- STDP and STDP variations with memristors for spiking neuromorphic learning systems
- (2013) T. Serrano-Gotarredona et al. Frontiers in Neuroscience
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- (2011) S. Cimino et al. MICROELECTRONIC ENGINEERING
- A Functional Hybrid Memristor Crossbar-Array/CMOS System for Data Storage and Neuromorphic Applications
- (2011) Kuk-Hwan Kim et al. NANO LETTERS
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- (2008) R. Quian Quiroga JOURNAL OF NEUROSCIENCE METHODS
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- (2008) Dmitri B. Strukov et al. NATURE
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