Nonlinear dependence of set time on pulse voltage caused by thermal accelerated breakdown in the Ti/HfO2/Pt resistive switching devices

Origin of the Ultra-nonlinear Switching Kinetics in Oxide-Based Resistive Switches

(2011) Stephan Menzel et al.   ADVANCED FUNCTIONAL MATERIALS

Time-dependent current-voltage curves during the forming process in unipolar resistance switching

(2011) S. B. Lee et al.   APPLIED PHYSICS LETTERS

A Phenomenological Model for the Reset Mechanism of Metal Oxide RRAM

(2010) Shimeng Yu et al.   IEEE ELECTRON DEVICE LETTERS

Atomic structure of conducting nanofilaments in TiO2 resistive switching memory

(2010) Deok-Hwang Kwon et al.   Nature Nanotechnology

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Resistance transition in metal oxides induced by electronic threshold switching

(2009) D. Ielmini et al.   APPLIED PHYSICS LETTERS

Filament Conduction and Reset Mechanism in NiO-Based Resistive-Switching Memory (RRAM) Devices

(2009) Ugo Russo et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Resistance and superconductivity switching caused by carrier injection: Evidences of self-trapping carriers in oxide electronics

(2009) Yuansha Chen et al.   JOURNAL OF APPLIED PHYSICS

Occurrence of Both Unipolar Memory and Threshold Resistance Switching in a NiO Film

(2009) S. H. Chang et al.   PHYSICAL REVIEW LETTERS

Scaling behaviors of reset voltages and currents in unipolar resistance switching

(2008) S. B. Lee et al.   APPLIED PHYSICS LETTERS

Resistive switching in transition metal oxides

(2008) Akihito Sawa   Materials Today

Memristive switching mechanism for metal/oxide/metal nanodevices

(2008) J. Joshua Yang et al.   Nature Nanotechnology