Deep-Level Characterization in GaN HEMTs-Part I: Advantages and Limitations of Drain Current Transient Measurements

Spatially-resolved spectroscopic measurements of Ec − 0.57 eV traps in AlGaN/GaN high electron mobility transistors

(2013) D. W. Cardwell et al.   APPLIED PHYSICS LETTERS

Iron-induced deep-level acceptor center in GaN/AlGaN high electron mobility transistors: Energy level and cross section

(2013) Marco Silvestri et al.   APPLIED PHYSICS LETTERS

Trapping phenomena in AlGaN/GaN HEMTs: a study based on pulsed and transient measurements

(2013) Gaudenzio Meneghesso et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Assessment of deep level defects in m-plane GaN grown by metalorganic chemical vapor deposition

(2012) T. A. Henry et al.   APPLIED PHYSICS LETTERS

Deep traps in nonpolar m-plane GaN grown by ammonia-based molecular beam epitaxy

(2012) Z. Zhang et al.   APPLIED PHYSICS LETTERS

Time- and Field-Dependent Trapping in GaN-Based Enhancement-Mode Transistors With p-Gate

(2012) Matteo Meneghini et al.   IEEE ELECTRON DEVICE LETTERS

Access-Region Defect Spectroscopy of DC-Stressed N-Polar GaN MIS-HEMTs

(2012) A. Sasikumar et al.   IEEE ELECTRON DEVICE LETTERS

Slow Detrapping Transients due to Gate and Drain Bias Stress in High Breakdown Voltage AlGaN/GaN HEMTs

(2012) Sandeepan DasGupta et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

As-grown deep-level defects in n-GaN grown by metal–organic chemical vapor deposition on freestanding GaN

(2012) Shang Chen et al.   JOURNAL OF APPLIED PHYSICS

A deep acceptor defect responsible for the yellow luminescence in GaN and AlGaN

(2012) P. Kamyczek et al.   JOURNAL OF APPLIED PHYSICS

Field plate related reliability improvements in GaN-on-Si HEMTs

(2012) A. Chini et al.   MICROELECTRONICS RELIABILITY

Evidence of surface states for AlGaN/GaN/SiC HEMTs passivated Si3N4 by CDLTS

(2012) M. Gassoumi et al.   SEMICONDUCTORS

Direct observation of 0.57eV trap-related RF output power reduction in AlGaN/GaN high electron mobility transistors

(2012) A.R. Arehart et al.   SOLID-STATE ELECTRONICS

Investigation of Trapping and Hot-Electron Effects in GaN HEMTs by Means of a Combined Electrooptical Method

(2011) Matteo Meneghini et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Electrical characterization of n-type Al0.30Ga0.70N Schottky diodes

(2011) A. R. Arehart et al.   JOURNAL OF APPLIED PHYSICS

The role of surface barrier oxidation on AlGaN/GaN HEMTs reliability

(2011) Milan Ťapajna et al.   MICROELECTRONICS RELIABILITY

Impact of N- and Ga-face polarity on the incorporation of deep levels in n-type GaN grown by molecular beam epitaxy

(2010) A. R. Arehart et al.   APPLIED PHYSICS LETTERS

Deep level transient spectroscopy in plasma-assisted molecular beam epitaxy grown Al0.2Ga0.8N/GaN interface and the rapid thermal annealing effect

(2010) Young S. Park et al.   APPLIED PHYSICS LETTERS

Carbon impurities and the yellow luminescence in GaN

(2010) J. L. Lyons et al.   APPLIED PHYSICS LETTERS

Integrated Optical and Electrical Analysis: Identifying Location and Properties of Traps in AlGaN/GaN HEMTs During Electrical Stress

(2010) Milan Ťapajna et al.   IEEE ELECTRON DEVICE LETTERS

A Current-Transient Methodology for Trap Analysis for GaN High Electron Mobility Transistors

(2010) Jungwoo Joh et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Study of electric field enhanced emission rates of an electron trap in n-type GaN grown by hydride vapor phase epitaxy

(2010) H. Ashraf et al.   JOURNAL OF APPLIED PHYSICS

Status of Reliability of GaN-Based Heterojunction Field Effect Transistors

(2010) Jacob H Leach et al.   PROCEEDINGS OF THE IEEE

GaN Power Transistors on Si Substrates for Switching Applications

(2010) Nariaki Ikeda et al.   PROCEEDINGS OF THE IEEE

Measurement of Channel Temperature in GaN High-Electron Mobility Transistors

(2009) Jungwoo Joh et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Effects of electron-irradiation on electrical properties of AlGaN/GaN Schottky barrier diodes

(2009) Z.-Q. Fang et al.   JOURNAL OF APPLIED PHYSICS

Comparison of electrical properties and deep traps in p-AlxGa1−xN grown by molecular beam epitaxy and metal organic chemical vapor deposition

(2009) A. Y. Polyakov et al.   JOURNAL OF APPLIED PHYSICS

Deep defects in GaN/AlGaN/SiC heterostructures

(2009) D. Kindl et al.   JOURNAL OF APPLIED PHYSICS

Current collapse transient behavior and its mechanism in submicron-gate AlGaN∕GaN heterostructure transistors

(2009) Hideki Hasegawa et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B

Electrical properties and deep traps spectra of a-plane GaN films grown on r-plane sapphire

(2009) A.Y. Polyakov et al.   Materials Science and Engineering B-Advanced Functional Solid-State Materials

Deep level optical and thermal spectroscopy of traps in n-GaN grown by ammonia molecular beam epitaxy

(2008) A. R. Arehart et al.   APPLIED PHYSICS LETTERS

Mechanisms of RF Current Collapse in AlGaN–GaN High Electron Mobility Transistors

(2008) M. Faqir et al.   IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY

A Closed-Form Model for Thermionic Trap-Assisted Tunneling

(2008) D. Mahaveer Sathaiya et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Electronic properties of the EC-0.6 eV electron trap in n-type GaN

(2008) Julien Pernot et al.   JOURNAL OF APPLIED PHYSICS

Deep level characteristics in n-GaN with inductively coupled plasma damage

(2008) H K Cho et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Charge deep level transient spectroscopy of electron traps in MOVPE grown n-GaN on sapphire

(2008) Zahid Hasan Mahmood et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

GaN-Based RF Power Devices and Amplifiers

(2008) U.K. Mishra et al.   PROCEEDINGS OF THE IEEE