Article
Computer Science, Information Systems
Yilin Chen, Qing Zhu, Jiejie Zhu, Minhan Mi, Meng Zhang, Yuwei Zhou, Ziyue Zhao, Xiaohua Ma, Yue Hao
Summary: This study investigates the negative shift of threshold voltage and degradation of leakage current in a Si3N4/AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor under UV light. The increase in leakage current is observed due to the capture of holes generated by UV illumination, while blue light and darkness do not have the same effect. Simulation results show that the trapped holes significantly increase the electric field strength in Si3N4.
SCIENCE CHINA-INFORMATION SCIENCES
(2023)
Article
Engineering, Electrical & Electronic
Niemat Moultif, Olivier Latry, Eric Joubert, Mohamed Ndiaye, Christian Moreau, Jean-Francois Goupy, Patrick Carton
Summary: This study examines the reliability of AlGaN/GaN high-electron-mobility transistors under RF stress, showing a stabilization of gate contact after aging test, but observing degradation in RF performances and dc parameters due to bulk traps caused by hot-electron effects between gate-source or gate-drain. The trap-related phenomena lead to reductions in drain current and RF output power, as well as transconductance degradation and pinch-off shift. Emission measurements reveal an uneven distribution of light and the presence of native traps associated with crystallographic defects like dislocations or impurities.
IEEE TRANSACTIONS ON POWER ELECTRONICS
(2021)
Article
Physics, Applied
Ryo Kagawa, Keisuke Kawamura, Yoshiki Sakaida, Sumito Ouchi, Hiroki Uratani, Yasuo Shimizu, Yutaka Ohno, Yasuyoshi Nagai, Jianbo Liang, Naoteru Shigekawa
Summary: We have successfully fabricated AlGaN/GaN high electron mobility transistors (HEMTs) on diamond substrates, and found that the HEMTs on diamond have smaller negative drain conductance due to their lower thermal resistance. This implies that the bonding-first process is applicable for fabricating HEMTs with low thermal resistance and thick nitride layers.
APPLIED PHYSICS EXPRESS
(2022)
Article
Engineering, Electrical & Electronic
Feiyuan Yang, Manikant Singh, Michael J. Uren, Trevor Martin, Hassan Hirshy, Michael A. Casbon, Paul J. Tasker, Martin Kuball
Summary: The breakdown mechanism in 0.25-μm gate length AlGaN/GaN-on-SiC transistors is investigated using the drain current injection technique. The results show that breakdown can be divided into two stages, which are related to gate voltage levels and material characteristics.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Computer Science, Information Systems
Arijit Bose, Debaleen Biswas, Shigeomi Hishiki, Sumito Ouchi, Koichi Kitahara, Keisuke Kawamura, Akio Wakejima
Summary: This study focused on high temperature stable amplifier characteristics for L-band or 2 GHz using AlGaN/GaN HEMTs on 3C-SiC/Si substrate. The research achieved outstanding electron transport behavior and cutoff frequency at elevated temperatures up to 125 degrees Celsius.
Article
Chemistry, Analytical
Young Jun Yoon, Jae Sang Lee, Jae Kwon Suk, In Man Kang, Jung Hee Lee, Eun Je Lee, Dong Seok Kim
Summary: This study investigated the combined effects of proton irradiation and surface pre-treatment on the current characteristics of GaN-based MIS-HEMTs, showing that the radiation hardness of the devices was affected by the SiN/GaN interface quality. Proton irradiation had a significant impact on the gate-lag characteristics of the pre-treated devices.
Article
Engineering, Electrical & Electronic
Yanhui Xing, Zishuo Han, Xingjie Huang, Guohao Yu, Can Yin, Baolu Guan, Jun Han, Baoshun Zhang, Zhongming Zeng
Summary: This paper investigates the use of Si3N4 passivation layer on GaN-based HEMT devices and finds that the devices with Si3N4/Al2O3 stacked structure perform better, showing reduced gate leakage and improved reliability by decreasing H plasma damage and suppressing the increase in gate leakage current.
MICROELECTRONICS RELIABILITY
(2023)
Article
Materials Science, Multidisciplinary
Xiao Cui, Keyu Ji, Taiping Zhang, Bingjun Wang, Wei Sha, Zilong Dong, Yuanhong Shi, Chunsheng Jiang, Qilin Hua, Weiguo Hu
Summary: This paper investigates the influence of low-fluence neutron irradiation on the electrical properties of AlGaN/GaN HEMTs. The results show that the output performance of the irradiated samples changes similarly, with almost no changes or slight decreases near the knee voltage. As for the leakage current, samples irradiated with different fluences exhibit different characteristics. Simulations using Crosslight software further reveal that low-fluence neutron irradiation primarily affects the 2DEG mobility and surface states of the HEMTs.
ADVANCED MATERIALS TECHNOLOGIES
(2023)
Article
Engineering, Electrical & Electronic
A. S. Arreola-Pina, J. Mimila-Arroyo
Summary: The study demonstrates that deuterium passivation improves the performance of the AlGaN/GaN High Electron Mobility Transistor (HEMT) and makes it more stable and reliable, despite a certain degree of degradation still occurring at high temperatures.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2021)
Article
Chemistry, Physical
Hui Guo, Pengfei Shao, Changkun Zeng, Haineng Bai, Rui Wang, Danfeng Pan, Peng Chen, Dunjun Chen, Hai Lu, Rong Zhang, Youdou Zheng
Summary: In this paper, the effects of a thin in-situ SiNx layer on GaN-based metal-insulator-semiconductor high electron mobility transistors were investigated. It was found that using in-situ SiNx as an interface sacrificial layer improved the electrical properties of the transistors. A trap model at the SiNx/AlGaN interface was proposed and experimentally confirmed.
APPLIED SURFACE SCIENCE
(2022)
Article
Engineering, Electrical & Electronic
Daniel M. Fleetwood, En Xia Zhang, Ronald D. Schrimpf, Sokrates T. Pantelides
Summary: An overview is presented of the effects of displacement damage, total-ionizing dose, and single-event effects in AlGaN/GaN HEMTs. High-fluence proton-induced displacement damage creates defects in the crystal structure. The response of DD/TID is strongly affected by the bias applied during irradiation. GaN-based HEMTs are particularly vulnerable to single-event effects, especially single-event burnout. Significant device-to-device variations in single-event burnout response exist in space systems.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
(2022)
Article
Chemistry, Analytical
Penghao Zhang, Luyu Wang, Kaiyue Zhu, Qiang Wang, Maolin Pan, Ziqiang Huang, Yannan Yang, Xinling Xie, Hai Huang, Xin Hu, Saisheng Xu, Min Xu, Chen Wang, Chunlei Wu, David Wei Zhang
Summary: A systematic study of epi-AlGaN/GaN on a SiC substrate was conducted, demonstrating a novel epitaxial design without the conventional buffer layer. The non-buffer epi-AlGaN/GaN structure exhibited better crystalline quality, surface morphology, and growth stress control. High-performance depletion-mode MIS-HEMTs with a low on-resistance and high output current were achieved due to the high-quality non-buffer AlGaN/GaN epitaxial growth.
Article
Engineering, Electrical & Electronic
Hung-Ming Kuo, Ting-Chang Chang, Kai-Chun Chang, Hsin-Ni Lin, Ting-Tzu Kuo, Chien-Hung Yeh, Ya-Huan Lee, Jia-Hong Lin, Xin-Ying Tsai, Jen-Wei Huang, Simon Sze
Summary: In this study, X-ray irradiation was performed on metal-insulator-semiconductor (MIS) AlGaN/GaN high-electron-mobility transistors (HEMTs). The shift in threshold voltage (V-th) and variation in ON-state current (I-on) were observed after X-ray irradiation. However, after a recovery period, the degradation trends of V-th and I-on were found to be opposite. The generation of holes in the GaN layer and defects in the Si3N4 layer due to X-ray irradiation were demonstrated and explained.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Engineering, Electrical & Electronic
Yan Dong, Rui Wang, Zili Xie, Yanli Liu, Jianming Lei, Hui Guo, Quan Dai, Jeong-Gil Kim, Seung-Hyeon Kang, Chul-Ho Won, Jung-Hee Lee, Dunjun Chen, Rong Zhang, Youdou Zheng
Summary: By integrating a reference HEMT device, the structure of the AlGaN/GaN HEMT pH sensor has been improved, resulting in higher sensitivity and stability. Analysis shows that the new structure has better electrical performance compared to traditional sensors.
IEEE SENSORS JOURNAL
(2021)
Article
Materials Science, Multidisciplinary
X. Cui, K. Ji, L. Liu, W. Sha, B. Wang, N. Xu, Q. Hua, W. Hu
Summary: High electron mobility transistors (HEMTs) based on AlGaN/GaN heterojunctions hold great promise for high-performance power electronics. By introducing high-kappa gate dielectric, such as HfZrOx (HZO), to form MOS-HEMTs, the performance of HEMTs can be enhanced, including higher output performance, lower leakage current, and improved surface properties. Furthermore, the piezotronic effect, which combines piezoelectric and semiconductor properties, offers a novel approach for optimizing HEMTs through external stress. In this study, the dynamic piezotronic effect of AlGaN/GaN HEMTs with HZO gate dielectric is investigated in pulse voltage modes. The results show that applying tensile stress to the GaN layer leads to decreased DC and pulse output characteristics of the MOS-HEMTs, as well as a slight increase in gate leakage current. Theoretical analysis suggests that the applied tensile stress effectively improves the energy band height of the triangular potential well and affects the energy states of defects. This work not only inspires the modulation of device performance using dynamic piezotronic effect, but also expands the potential applications of HEMTs in strain-controlled platforms.
MATERIALS TODAY PHYSICS
(2022)
Article
Engineering, Electrical & Electronic
Issa Alaji, Walid Aouimeur, Haitham Ghanem, Etienne Okada, Sylvie Lepilliet, Daniel Gloria, Guillaume Ducournau, Christophe Gaquiere
Summary: This paper presents the design and characterization of two tunable power detectors integrated in SiGe 55-nm BiCMOS technology for 5G applications. The detectors can adjust parameters by controlling biasing current and exhibit low power consumption with high sensitivity values. Larger diode size can achieve targeted sensitivity value with lower power consumption.
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS
(2021)
Article
Computer Science, Interdisciplinary Applications
Mohammad A. Alim, Mayahsa M. Ali, Christophe Gaquiere
Summary: This research explores the impact of temperature and frequency on the third-order intercept point (TOI) and nonlinear distortion level (NDL) of GaN HEMTs. The results show that the TOI and nonlinear distortion levels change significantly with frequency and temperature, providing insights for optimizing device performance.
INTERNATIONAL JOURNAL OF RF AND MICROWAVE COMPUTER-AIDED ENGINEERING
(2021)
Article
Engineering, Electrical & Electronic
Md. Abdul Kaium Khan, Mohammad Abdul Alim, Christophe Gaquiere
Summary: Analysis of the temperature dependency of 2DEG in AlGaN/GaN HEMT and AlGaN/InGaN/GaN pHEMT reveals a decreasing trend in 2DEG density in both devices, with a higher reduction rate observed in AlGaN/GaN HEMT. The incorporation of an additional 5 nm thick pseudomorphic layer of InGaN in AlGaN/InGaN/GaN pHEMT improves 2DEG transport properties and enhances transistor performance. Overall, AlGaN/InGaN/GaN pHEMT demonstrates better 2DEG stability with temperature compared to AlGaN/GaN HEMT.
MICROELECTRONIC ENGINEERING
(2021)
Article
Engineering, Electrical & Electronic
Issa Alaji, Sylvie Lepilliet, Daniel Gloria, Guillaume Ducournau, Christophe Gaquiere
Summary: This study presents the design and characterization of a real-time frequency-compensated power detector based on NMOS transistor, dedicated to on-chip power detection in G-band frequencies. An innovative attenuator circuit is designed to compensate for voltage sensitivity variation with frequency, resulting in a small sensitivity variation over the frequency band. With a low NEP value and relatively high voltage sensitivity, this detector demonstrates performance beyond current state-of-the-art in the field.
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
(2021)
Article
Engineering, Electrical & Electronic
Issa Alaji, Walid Aouimeur, Haitham Ghanem, Etienne Okada, Sylvie Lepilliet, Daniel Gloria, Guillaume Ducournau, Christophe Gaquiere
Summary: This paper presents the design and characterization of zero bias power detectors based on MOSFET transistors integrated in SiGe 55-nm BiCMOS technology. The detectors operate in the frequency band of (38-55) GHz for optimizing power consumption in 5G devices, with an HPA detector showing excellent performance. Sensitivity values are in good agreement with simulation results.
MICROELECTRONICS JOURNAL
(2021)
Article
Physics, Applied
E. Perez-Martin, I. iniguez-de-la-Torre, C. Gaquiere, T. Gonzalez, J. Mateos
Summary: This paper analyzes the occupancy of sidewall surface states in AlGaN/GaN-based self-switching diodes using a semi-classical Monte Carlo simulator in a wide temperature range. It is found that a more complex approach is required to replicate the experimental curves accurately at low temperatures. An algorithm is proposed to fit the current values at every bias point by considering the temperature and applied bias.
JOURNAL OF APPLIED PHYSICS
(2021)
Article
Engineering, Electrical & Electronic
N. Zerounian, W. Aouimeur, A. -S. Grimault-Jacquin, G. Ducournau, C. Gaquiere, F. Aniel
Summary: A technology based on polymer has been developed for sub-millimeter single-mode conductor-backed coplanar waveguides with good agreement between experimental performances and analytical and numerical modeling. The extraction of attenuation factor, relative phase velocity, and characteristic impedance at 600 GHz is achieved using a two-tier Thru-Reflect-Line correction and square root of Thru de-embedding method, with the fundamental propagating mode remaining unique over a wide frequency range. The loss performance of the coplanar waveguides opens the road for fully integrated THz circuits at the state-of-the-art level.
JOURNAL OF ELECTROMAGNETIC WAVES AND APPLICATIONS
(2021)
Article
Engineering, Electrical & Electronic
Abu Zahed Chowdhury, Mohammad Abdul Alim, Shariful Islam, Christophe Gaquiere
Summary: This paper investigated the channel temperature and thermal sensitivity of a 0.15 μm gate GaN HEMT at nine different temperatures from 233 K to 423 K. The channel temperature estimation was achieved through DC and pulse measurement, validated with modeled data, and the thermal resistance for the device was estimated and compared with literature. Further research was conducted on the thermal-sensitivity of the DC and small signal parameters, showing different trends for extrinsic and intrinsic parameters with temperature having a greater impact on resistances.
MICROELECTRONIC ENGINEERING
(2021)
Article
Optics
Arun Bhaskar, Justine Philippe, Flavie Braud, Etienne Okada, Vanessa Avramovic, Jean-Francois Robillard, Cedric Durand, Daniel Gloria, Christophe Gaquiere, Emmanuel Dubois
Summary: This study comprehensively investigates large-area laser ablation of silicon, developing a unique approach to gain insight into the laser milling process by detailed analysis of trenches. The results demonstrate considerable performance improvement in radio-frequency applications, showcasing the applicability of milling to RF functions like RF switch, inductors, and LNA.
OPTICS AND LASER TECHNOLOGY
(2021)
Article
Engineering, Electrical & Electronic
M. Margalef-Rovira, G. Pelletier, V Avramovic, S. Lepilliet, J. Bourgeat, J-M Duchamp, M. J. Barragan, E. Pistono, S. Bourdel, C. Gaquiere, P. Ferrari
Summary: This article introduces an innovative architecture for implementing electrostatic discharge (ESD) protection for millimeter-wave devices using 3-dB couplers and Coupled Slow wave CoPlanar Waveguides (CS-CPWs). Experimental results demonstrate excellent performance across various frequency ranges, effectively protecting against external events while minimizing interference with the RF path.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Engineering, Electrical & Electronic
C. Maye, S. Lepilliet, E. Okada, M. Margalef-Rovira, I Alaji, D. Gloria, G. Ducournau, C. Gaquiere
Summary: This article discusses challenges and performances of a passive load-pull test bench dedicated to G-band frequencies. A solution is proposed to validate the system, with specific attention to calibration in the millimeter-wave frequency range and the impact of missing phase information on measurement accuracy.
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
(2022)
Article
Computer Science, Information Systems
Arun Bhaskar, Justine Philippe, Etienne Okada, Flavie Braud, Jean-Francois Robillard, Cedric Durand, Frederic Gianesello, Daniel Gloria, Christophe Gaquiere, Emmanuel Dubois
Summary: With the advancement of RF/microwave technology, there is a need for circuits that can meet demanding RF front end specifications. This study introduces a new technique using laser ablation to achieve membrane suspension, allowing for the evaluation of circuit performance without the effects of substrate coupling.
Article
Engineering, Electrical & Electronic
Antoine Chanuel, Yveline Gobil, Chuan Lun Hsu, Matthew Charles, Marianne Coig, Jerome Biscarrat, Francois Aussenac, Nicolas Defrance, Christophe Gaquiere, Fred Gaillard, Erwan Morvan
Summary: This study introduces a new contact technology for high-frequency transistors in the Ka-band, showing advantages such as low contact resistance and high breakdown voltage, and explores a new breakdown mechanism. Experimental results demonstrate that silicon implantation has a certain influence on improving breakdown voltage.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Engineering, Electrical & Electronic
R. Strenaer, Y. Guhel, C. Gaquiere, B. Boudart
Summary: This article aims to detect electron traps in AlInN/GaN transistors operating at room temperature by combining pulsed electrical measurement with photoionization techniques. Two electron traps were identified, one of which could be related to dislocations in the GaN buffer. These traps have short time constants and degrade the electrical behavior of the components. They are responsible for gate lag effects observed during the pulsed electrical characterization of the transistors and induce negative output conductance.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Proceedings Paper
Engineering, Electrical & Electronic
Mohammad A. Alim, Ali A. Rezazadeh, Christophe Gaquiere
Summary: A study on the shifting of third-order notch and threshold voltage with temperature for GaN and GaAs FETs was conducted, revealing that the thermal response of threshold voltage demonstrates a rising trend in GaN and a falling trend in GaAs FETs. An analytical model for notch current was developed and validated with measured data, providing significant insights into device behavior.
2020 15TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC)
(2021)
