Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 58, Issue 9, Pages 2996-3003Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2011.2160547
Keywords
Characterization; gallium nitride; high-electron mobility transistors (HEMT); luminescence; traps
Funding
- ONR [N000141010608]
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This paper presents a fast methodology for the investigation of trapping and hot-electron effects in GaN-based high-electron mobility transistors (HEMTs). The presented method is based on pulsed I-D-V-G measurements and electroluminescence characterization and provides a rapid and effective evaluation of the following: 1) the presence of traps in the region under the gate; 2) trapping phenomena occurring in the gate-drain access region; 3) the role of traps in limiting the maximum gate-drain electric field and the equivalent electron temperature. The method is validated by means of a split-wafer experiment carried out on GaN-based HEMTs with different gate materials with and without passivation.
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