☆ 4.6 Article

Electronic properties of the EC-0.6 eV electron trap in n-type GaN

JOURNAL OF APPLIED PHYSICS (2008)

Journal

JOURNAL OF APPLIED PHYSICS

Volume 103, Issue 2, Pages -

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AMER INST PHYSICS

DOI: 10.1063/1.2830860

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Physics, Applied

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Abstract

The electronic properties of the E-C-0.6 eV electron trap in n-type GaN are investigated by deep-level transient spectroscopy with the help of an experimental method relying on space-charge depth modulation [D. Pons, J. Appl. Phys. 55, 3644 (1984)]. The free energy and capture cross-section temperature dependence are determined between 250 and 330 K. The capture cross section is found at sigma(n)=8x10(-16) cm(2), corresponding to a neutral center with a degeneracy factor of g(n)<= 4. (C) 2008 American Institute of Physics.

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