Article
Engineering, Electrical & Electronic
A. S. Arreola-Pina, J. Mimila-Arroyo
Summary: The study demonstrates that deuterium passivation improves the performance of the AlGaN/GaN High Electron Mobility Transistor (HEMT) and makes it more stable and reliable, despite a certain degree of degradation still occurring at high temperatures.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2021)
Article
Physics, Applied
Chenkai Deng, Wei-Chih Cheng, XiGuang Chen, KangYao Wen, MingHao He, ChuYing Tang, Peiran Wang, Qing Wang, HongYu Yu
Summary: A dramatic reduction in current collapse is achieved in GaN-based HEMTs using dual-layer SiNx stressor passivation (DSSP), which neutralizes piezo polarization and mitigates electric field crowding. The current collapse effect is significantly restrained with DSSP, resulting in negligible collapse compared to the baseline device. DSSP also reduces gate leakage and enhances gate stability, making it an attractive technique for reliable GaN-on-Si HEMTs.
APPLIED PHYSICS LETTERS
(2023)
Article
Engineering, Electrical & Electronic
Niemat Moultif, Olivier Latry, Eric Joubert, Mohamed Ndiaye, Christian Moreau, Jean-Francois Goupy, Patrick Carton
Summary: This study examines the reliability of AlGaN/GaN high-electron-mobility transistors under RF stress, showing a stabilization of gate contact after aging test, but observing degradation in RF performances and dc parameters due to bulk traps caused by hot-electron effects between gate-source or gate-drain. The trap-related phenomena lead to reductions in drain current and RF output power, as well as transconductance degradation and pinch-off shift. Emission measurements reveal an uneven distribution of light and the presence of native traps associated with crystallographic defects like dislocations or impurities.
IEEE TRANSACTIONS ON POWER ELECTRONICS
(2021)
Article
Physics, Applied
Mei Ge, Yi Li, Youhua Zhu, Dunjun Chen, Zhiliang Wang, Shuxin Tan
Summary: This research presents a p-GaN gate AlGaN/GaN high electron mobility transistor with a beta-Ga2O3 back barrier and investigates its electrical characteristics. The use of a Ga2O3 back barrier increases the threshold voltage of the device and decreases the off-state leakage current level. Additionally, the thickness of the beta-Ga2O3 back barrier has an impact on the threshold voltage and leakage current.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2022)
Article
Materials Science, Multidisciplinary
Xiao Cui, Keyu Ji, Taiping Zhang, Bingjun Wang, Wei Sha, Zilong Dong, Yuanhong Shi, Chunsheng Jiang, Qilin Hua, Weiguo Hu
Summary: This paper investigates the influence of low-fluence neutron irradiation on the electrical properties of AlGaN/GaN HEMTs. The results show that the output performance of the irradiated samples changes similarly, with almost no changes or slight decreases near the knee voltage. As for the leakage current, samples irradiated with different fluences exhibit different characteristics. Simulations using Crosslight software further reveal that low-fluence neutron irradiation primarily affects the 2DEG mobility and surface states of the HEMTs.
ADVANCED MATERIALS TECHNOLOGIES
(2023)
Article
Physics, Multidisciplinary
Jinjin Tang, Guipeng Liu, Bangyao Mao, Salamat Ali, Guijuan Zhao, Jianhong Yang
Summary: The introduction of AlGaN back-barrier improves the high-frequency performance of AlGaN/AlN/GaN HEMTs and its impact on the irradiation tolerance of GaN-based HEMTs is investigated. The calculation results show that HEMTs with back-barrier exhibit more significant decrease in 2DEG density and mobility after proton irradiation compared to those without back-barrier, providing valuable suggestions for designing radiation-resistant GaN-based HEMTs.
Article
Engineering, Electrical & Electronic
Chunzhou Shi, Ling Yang, Meng Zhang, Mei Wu, Bin Hou, Hao Lu, Fuchun Jia, Fei Guo, Wenliang Liu, Qian Yu, Xiaohua Ma, Yue Hao
Summary: This article demonstrates the superior power performance of a double-channel high-electron-mobility transistor (HEMT) operated at a high drain voltage in the sub-6 GHz range. The double channel with graded barrier HEMT (DCGB-HEMT) shows better direct current characteristics compared to the single channel HEMT (SC-HEMT), including a wider gate voltage swing, higher saturation current, and higher OFF-state breakdown voltage. Through TCAD simulation, it is found that the graded barrier in DCGB-HEMT reduces the peak electric field, resulting in increased breakdown voltage. Furthermore, DCGB-HEMT exhibits improved current collapse and power-added efficiency (PAE) due to better gate control and reduced leakage at high drain voltage.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Computer Science, Information Systems
Haochen Zhang, Yue Sun, Kunpeng Hu, Lei Yang, Kun Liang, Zhanyong Xing, Hu Wang, Mingshuo Zhang, Huabin Yu, Shi Fang, Yang Kang, Haiding Sun
Summary: This study reports a high-performance double heterojunction AlGaN/GaN HEMT with a decreasing-Al-composition graded AlGaN back barrier (BB) beneath the GaN channel, which improves electron confinement. The DH-HEMT shows significantly improved on-state drain current density and off-state breakdown voltage compared to the SH-HEMT. Additionally, with a SiNx passivation layer, the DH-HEMT exhibits almost constant off-state leakage current and negligible gate contact degradation across a temperature range of 25°C to 150°C. These results highlight the superiority and reliability of the proposed graded AlGaN BB to enhance device characteristics in high-temperature and harsh conditions.
SCIENCE CHINA-INFORMATION SCIENCES
(2023)
Article
Nanoscience & Nanotechnology
Jiantao Cheng, Fengfeng Liu, Chunping Jiang, Wenqing Zhu
Summary: In this article, an amorphous ternary AlBN dielectric passivation layer is proposed to improve the performance of GaN/AlGaN high-electron mobility transistors (HEMTs). The experimental results show that the electrical characteristics of HEMTs are significantly improved with the AlBN passivation layer, which is attributed to the effect of boron dopants on the surface potential of AlBN films.
Article
Engineering, Electrical & Electronic
Ahmet Serhat Dincer, Mehmet Taha Haliloglu, Ahmet Toprak, Semsettin Altindal, Ekmel Ozbay
Summary: This study investigated the effect of SiXNY bilayer passivation materials on the electrical properties of an AlGaN high electron mobility transistor (HEMT). The experimental results showed that bilayer passivation can decrease drain leakage current and gate leakage current, as well as increase current density and transconductance.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
(2023)
Article
Physics, Applied
Jun Hyuk Park, Sun-Kyu Hwang, Joonyong Kim, Woochul Jeon, Injun Hwang, Jaejoon Oh, Boram Kim, Younghwan Park, Dong-Chul Shin, Jong-Bong Park, Jongseob Kim
Summary: This study investigates the effect of N2O plasma treatment on the reliability of p-GaN gate AlGaN/GaN HEMTs, specifically in the AlGaN drift region. The results show that N2O plasma treatment can form a GaON/AION compound layer, reduce the number of interface traps, and protect the AIGaN surface, thereby improving the reliability of the device.
APPLIED PHYSICS LETTERS
(2022)
Article
Engineering, Electrical & Electronic
Daniel M. Fleetwood, En Xia Zhang, Ronald D. Schrimpf, Sokrates T. Pantelides
Summary: An overview is presented of the effects of displacement damage, total-ionizing dose, and single-event effects in AlGaN/GaN HEMTs. High-fluence proton-induced displacement damage creates defects in the crystal structure. The response of DD/TID is strongly affected by the bias applied during irradiation. GaN-based HEMTs are particularly vulnerable to single-event effects, especially single-event burnout. Significant device-to-device variations in single-event burnout response exist in space systems.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
(2022)
Article
Engineering, Electrical & Electronic
P. Vigneshwara Raja, Jean-Christophe Nallatamby, Mohamed Bouslama, Jean-Claude Jacquet, Raphael Sommet, Christophe Chang, Benoit Lambert
Summary: The effects of high-temperature reverse bias stress on the static and dynamic characteristics of 0.15 μm AlGaN/GaN HEMTs are investigated in this study. Changes in drain current, gate leakage current, output power, and characteristics are analyzed, and the location of traps responsible for certain effects is identified through testing and simulations.
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
(2022)
Article
Engineering, Electrical & Electronic
Zhan Gao, Fabiana Rampazzo, Matteo Meneghini, Nicola Modolo, Carlo De Santi, Herve Blanck, Hermann Stieglauer, Daniel Sommer, Jan Gruenenputt, Olof Kordina, Jr-Tai Chen, J-C Jacquet, C. Lacam, S. Piotrowicz, Gaudenzio Meneghesso, Enrico Zanoni
Summary: The on-wafer robustness and short-term reliability of 0.15 μm AlGaN/GaN HEMTs, fabricated with either a 'mono-layer' or 'bi-layer' AlGaN backbarrier, were compared. Devices with the 'bi-layer' backbarrier exhibited improved subthreshold behavior, reduced on-resistance and leakage current. Electroluminescence measurements indicated an increased electric field in the 'bi-layer' devices.
MICROELECTRONICS RELIABILITY
(2021)
Article
Biochemistry & Molecular Biology
Hsien-Chin Chiu, Chia-Hao Liu, Chong-Rong Huang, Chi-Chuan Chiu, Hsiang-Chun Wang, Hsuan-Ling Kao, Shinn-Yn Lin, Feng-Tso Chien
Summary: By growing a high-quality Al2O3/AlN layer in an HEMT, the MIS-HEMT showed improved gate leakage and threshold voltage compared to the SG-HEMT, achieving a higher turn-on voltage, better reliability, and longer lifetime.
Article
Physics, Applied
Karol Frohlich, Ivan Kundrata, Michal Blaho, Marian Precner, Milan Tapajna, Martin Klimo, Ondrej Such, Ondrej Skvarek
JOURNAL OF APPLIED PHYSICS
(2018)
Article
Engineering, Electrical & Electronic
M. Tapajna, J. Drobny, F. Gucmann, K. Husekova, D. Gregusova, T. Hashizume, J. Kuzmik
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2019)
Article
Materials Science, Multidisciplinary
Michal Kucera, Adam Adikimenakis, Edmund Dobrocka, Robert Kudela, Milan Tapajna, Agata Laurencikova, Alexandros Georgakilas, Jan Kuzmik
Correction
Engineering, Electrical & Electronic
M. Tapajna, J. Drobny, F. Gucmann, K. Husekova, D. Gregusova, T. Hashizume, J. Kuzmik
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2019)
Article
Engineering, Electrical & Electronic
F. Egyenes-Porsok, F. Gucmann, K. Husekova, E. Dobrocka, M. Sobota, M. Mikolasek, K. Frohlich, M. Tapajna
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
(2020)
Article
Chemistry, Physical
O. Pohorelec, M. Tapajna, D. Gregusova, F. Gucmann, S. Hasenohrl, S. Hascik, R. Stoklas, A. Seifertova, B. Pecz, L. Toth, J. Kuzmik
APPLIED SURFACE SCIENCE
(2020)
Review
Crystallography
Milan Tapajna
Article
Chemistry, Physical
Michal Bodik, Michaela Sojkova, Martin Hulman, Milan Tapajna, Martin Truchly, Karol Vegso, Matej Jergel, Eva Majkova, Marianna Spankova, Peter Siffalovic
Summary: The tribological properties of MoS2 films can be optimized by adjusting the crystallographic orientation, leading to different friction behaviors. Horizontally oriented MoS2 sheets exhibit a lower coefficient of friction compared to vertically oriented sheets.
APPLIED SURFACE SCIENCE
(2021)
Article
Materials Science, Multidisciplinary
A. A. Onoprienko, V. I. Ivashchenko, P. L. Scrynskyy, A. M. Kovalchenko, A. O. Kozak, A. K. Sinelnichenko, E. I. Olifan, M. Tapajna, L. Orovc
Summary: Films in the Ti-B-C system were deposited onto Si (100) substrates using dual direct current magnetron sputtering of Ti-B and graphite targets. The carbon content in the films, as controlled by the sputtering current at the graphite target, influenced the film hardness and friction coefficient. Experimental results suggest that the deposited Ti-B-C films consist of nanocrystals of solid solution TiB2-xCx surrounded by an amorphous B-C-O phase.
Article
Chemistry, Physical
Andrii Kozak, Marian Precner, Peter Hutar, Michal Bodik, Karol Vegso, Yuriy Halahovets, Martin Hulman, Peter Siffalovic, Milan Tapajna
Summary: This study investigated the anisotropic friction behavior between MoSe2 flakes using nanofriction measurements, revealing a high angular dependence of friction forces for both monolayer and few-layer MoSe2 flakes, with the anisotropy decreasing with applied loads. The differences in friction mechanisms between monolayer and few-layer MoSe2 flakes were confirmed by friction scanning velocity dependences.
APPLIED SURFACE SCIENCE
(2021)
Article
Nanoscience & Nanotechnology
J. Kuzmik, A. Adikimenakis, M. Tapajna, D. Gregusova, S. Hascik, E. Dobrocka, K. Tsagaraki, R. Stoklas, A. Georgakilas
Summary: The progress of information technologies is hindered by the limited operational speed and frequency of electronic devices. This study demonstrates InN as a promising material with the highest electron velocity for next-generation ultra-fast electronics, potentially filling the THz frequency gap between electronic and optical devices.
Article
Nanoscience & Nanotechnology
Andrii Kozak, Monika Hofbauerova, Yuriy Halahovets, Lenka Pribusova-Slus, Marian Precner, Matej Micsik, L'ubomir Orovc, Martin Hulman, Anastasiia Stepura, Maria Omastova, Peter S. Iffalovic, Milan Tapajna
Summary: The unique structure and control over surface termination groups make MXenes highly promising for solid lubrication applications. While the tribological properties of two-dimensional MXene particles have been extensively studied, research on the nanotribological properties of mono- and few-layer MXenes is still limited.
ACS APPLIED MATERIALS & INTERFACES
(2022)
Article
Materials Science, Ceramics
R. Bystricky, M. Skratek, J. Rusnak, M. Precner, M. Tapajna, M. Hnatko, P. Sajgalik
Summary: Silicon carbide based composites with different weight percentages of Ti and NbC as sintering additives were prepared. The composites showed excellent electrical conductivity and complex magnetic properties. Samples with 30 and 40 wt % of Ti and NbC exhibited superconducting state below 2 K.
CERAMICS INTERNATIONAL
(2023)
Article
Materials Science, Coatings & Films
Fedor Hrubisak, Kristina Husekova, Xiang Zheng, Alica Rosova, Edmund Dobrocka, Milan Tapajna, Matej Micusik, Peter Nadazdy, Fridrich Egyenes, Javad Keshtkar, Eva Kovacova, James W. Pomeroy, Martin Kuball, Filip Gucmann
Summary: In this study, monoclinic ss-Ga2O3 and orthorhombic kappa-Ga2O3 thin films were grown on highly thermally conductive 4H-SiC substrates using liquid-injection metal-organic chemical vapor deposition. Both gallium precursors produced the ss phase, but only the latter led to growth of kappa-Ga2O3. The best growth conditions for ss-Ga2O3 were a temperature of 700 degrees C and O-2 flows in the range of 600-800 SCCM. For kappa-Ga2O3, a narrow growth window was observed, with the best results at a temperature of 600 degrees C and an O-2 flow of 800 SCCM. The results suggest the potential of integrating Ga2O3 and SiC for improved thermal management and reliability of future high power Ga2O3-based devices.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
(2023)
Proceedings Paper
Engineering, Electrical & Electronic
M. Tapajna, A. Vincze, P. Noga, J. Dobrovodsky, A. Sagatova, S. Hasenohrl, D. Gregusova, J. Kuzmik
2018 12TH INTERNATIONAL CONFERENCE ON ADVANCED SEMICONDUCTOR DEVICES AND MICROSYSTEMS (ASDAM)
(2018)
Article
Engineering, Electrical & Electronic
Zhiqiang Wang, Siyang Dai, Yao Zhao, Guofeng Li, Bing Ji, Volker Pickert, Bowen Gu, Shuai Ding
Summary: This paper proposes a lumped-charge model for IEGT single chip, considering the effect of carrier injection enhancement in the emitter. The parasitic inductance of the parallel branches in PP-IEGT is extracted using Ansys simulation, and the validity of Ansys simulation is verified. Furthermore, the switching inconsistency is evaluated by combining the electrical model and the effect of mutual inductance, and it is found that mutual inductance is an important factor influencing electrical parameter distribution.
MICROELECTRONICS RELIABILITY
(2024)
Article
Engineering, Electrical & Electronic
Sankha Subhra Ghosh, Surajit Chattopadhyay, Arabinda Das, Nageswara Rao Medikondu, Abdulkarem H. M. Almawgani, Adam R. H. Alhawari, Sudipta Das
Summary: This article describes a method for identifying the IGBT switch breakdown failure in a 3-phase, 3-level Voltage Source Converter linked to the photovoltaic grid. Comparative learning has been used to detect the specific parameter suitable for the detection of the failure.
MICROELECTRONICS RELIABILITY
(2024)
Article
Engineering, Electrical & Electronic
Milad Khajehvand, Henri Seppanen, Panthea Sepehrband
Summary: Using SEM/EDX analysis, microscale fracture at the bond-pad is detected during the wedge bonding process of Cu wire to a Cu or Al substrate. It is observed that the fracture of the bond leads to the formation of a bulge on the wire and a cavity in the substrate, causing fracture in the original substrate. 3D optical profiler reveals that the depth, radius, and surface area of the cavity increase with bond time for a constant bond force and power. These metrics are suggested as new factors for optimizing the wedge bonding process. The optimal bonding parameters should maximize the cavity's surface area (related to bond's pull force) while minimizing the cavity's depth relative to the substrate's thickness to avoid substrate damage. Furthermore, Molecular Dynamics simulations propose a potential plastic deformation mechanism for bond-pad damage, suggesting the benefits of using a small-grain-sized substrate, low transducer's vibration amplitude, and high transducer's frequency to minimize the cavity's depth.
MICROELECTRONICS RELIABILITY
(2024)
