Article
Physics, Multidisciplinary
Honghui Liu, Zhiwen Liang, Fengge Wang, Yanyan Xu, Xien Yang, Yisheng Liang, Xin Li, Lizhang Lin, Zhisheng Wu, Yang Liu, Baijun Zhang
Summary: This study successfully fabricated lateral Schottky barrier diodes with small capacitance and low turn-on voltage on n-GaN and AlGaN/GaN heterostructure. The lateral SBDs exhibited significantly reduced capacitance without sacrificing performance in terms of on-resistance and reverse leakage current. Additionally, the V(on) of lateral AlGaN/GaN SBD was reduced compared to planar SBD due to direct contact between the anode metal and the two-dimensional electron gas.
FRONTIERS IN PHYSICS
(2022)
Article
Materials Science, Multidisciplinary
Xiao Cui, Keyu Ji, Taiping Zhang, Bingjun Wang, Wei Sha, Zilong Dong, Yuanhong Shi, Chunsheng Jiang, Qilin Hua, Weiguo Hu
Summary: This paper investigates the influence of low-fluence neutron irradiation on the electrical properties of AlGaN/GaN HEMTs. The results show that the output performance of the irradiated samples changes similarly, with almost no changes or slight decreases near the knee voltage. As for the leakage current, samples irradiated with different fluences exhibit different characteristics. Simulations using Crosslight software further reveal that low-fluence neutron irradiation primarily affects the 2DEG mobility and surface states of the HEMTs.
ADVANCED MATERIALS TECHNOLOGIES
(2023)
Article
Chemistry, Physical
Yuan Ren, Zhiyuan He, Bin Dong, Changan Wang, Zhaohui Zeng, Qixin Li, Zhitao Chen, Liuan Li, Ningyang Liu
Summary: This study focuses on the electrical properties of Ni/n-GaN Schottky barrier diodes fabricated on GaN bulk substrates with different crystal orientations. The results show that the crystal orientation of the GaN substrate has a significant impact on the Schottky barrier height, reverse leakage current, and barrier inhomogeneity of the devices.
JOURNAL OF ALLOYS AND COMPOUNDS
(2022)
Article
Materials Science, Multidisciplinary
Song Deng, Kai Liu, Chong Wang, Xuefeng Zheng, Xiaohua Ma, Runhao Wang, Yaopeng Zhao, Ang Li, Yunlong He, Wei Mao, Yue Hao
Summary: AlGaN/GaN lateral Schottky barrier diodes with nonrecessed and recessed floating metal rings (FMR) structures show different electrical characteristics, with recessed FMR SBDs exhibiting lower onset voltage, higher forward current, and higher breakdown voltage compared to nonrecessed FMR SBDs. However, the specific on-resistance of the recessed FMR SBDs is slightly higher. Simulation of electric field distributions indicates that the improvement in breakdown voltage is due to a broader depletion region in the recessed FMR SBDs.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
(2022)
Article
Crystallography
Jae-Hoon Lee, Jung-Hee Lee, Ki-Sik Im
Summary: High Al composition AlGaN/GaN SBDs exhibited higher leakage current compared to low Al composition devices, but the use of high quality ALD Al2O3 deposited at high temperature helped reduce the surface leakage current. The reduction in donorlike surface states and interface trap density effectively decreased the leakage current of the AlGaN/GaN SBDs.
Article
Engineering, Electrical & Electronic
Ming Xiao, Yunwei Ma, Kai Liu, Kai Cheng, Yuhao Zhang
Summary: This study demonstrates multi-channel AlGaN/GaN Schottky barrier diodes with a breakthrough voltage over 10 kV and proposes a novel device design for electric field management, showing the great promise of GaN in the field of medium- and high-voltage power electronics.
IEEE ELECTRON DEVICE LETTERS
(2021)
Article
Physics, Multidisciplinary
Jinjin Tang, Guipeng Liu, Bangyao Mao, Salamat Ali, Guijuan Zhao, Jianhong Yang
Summary: The introduction of AlGaN back-barrier improves the high-frequency performance of AlGaN/AlN/GaN HEMTs and its impact on the irradiation tolerance of GaN-based HEMTs is investigated. The calculation results show that HEMTs with back-barrier exhibit more significant decrease in 2DEG density and mobility after proton irradiation compared to those without back-barrier, providing valuable suggestions for designing radiation-resistant GaN-based HEMTs.
Article
Materials Science, Multidisciplinary
Kai Liu, Chong Wang, Xuefeng Zheng, Xiaohua Ma, Yaopeng Zhao, Ang Li, Yunlong He, Wei Mao, Yue Hao
Summary: The study improved the performance of recessed anode AlGaN/GaN Schottky barrier diodes using fluorine (F) plasma and HCl solution treatments as post etching treatment, ultimately optimizing forward and reverse currents through a designed deep recessed anode structure and changes in electron transport paths.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
(2021)
Article
Engineering, Electrical & Electronic
Taofei Pu, Xiaobo Li, Junye Wu, Jiaying Yang, Youming Lu, Xinke Liu, Jin-Ping Ao
Summary: An AlGaN/GaN Schottky barrier diode (SBD) temperature sensor with a low turn-on voltage was fabricated using a recessed anode structure. This sensor demonstrates good rectification performance and relatively low turn-on voltage in a broad temperature range. The temperature-dependent forward voltage shows great linearity with a sensitivity of about 1.0 mV/K, making it suitable for temperature sensor applications.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Chemistry, Physical
Jiabo Chen, Zhaoke Bian, Zhihong Liu, Dan Zhu, Xiaoling Duan, Yinhe Wu, Yanqing Jia, Jing Ning, Jincheng Zhang, Yue Hao
Summary: The current conduction mechanisms of Mo/Au Schottky contacts on n-GaN with post metal annealing at different temperatures were investigated. Variations in barrier heights and an inhomogeneous distribution were observed, with interactions between Mo and GaN affecting the observed differences in Schottky barrier height under different annealing conditions.
JOURNAL OF ALLOYS AND COMPOUNDS
(2021)
Article
Engineering, Electrical & Electronic
Tao Zhang, Yi Wang, Yanni Zhang, Yueguang Lv, Jing Ning, Yachao Zhang, Hong Zhou, Xiaoling Duan, Jincheng Zhang, Yue Hao
Summary: This article systematically investigates the impact of annealing on GaN SBDs and the anode metals on the performance of AlGaN/GaN SBDs. It was found that annealing treatment can suppress interface states, enhance device stability, and achieve high-performance SBDs with various work-function metals as anodes. Different Schottky barrier heights and characteristics were obtained with different metals, with W providing a low turn-on voltage and low leakage current, and Ni showing extremely low leakage current and great characteristics at high temperature.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Computer Science, Information Systems
Pawel Bajurko, Jakub Sobolewski, Yevhen Yashchyshyn, Pavlo Sai, Sergey L. Rumyantsev, Teodor Narytnyk, Grzegorz Cywinski
Summary: This paper presents two designs of millimeter-wave single-pole single-throw switches based on AlGaN/GaN heterostructure, demonstrating their superior performance in terms of operational bandwidth, on-off ratio, and switching speed.
Article
Physics, Applied
Xiufeng Song, Jincheng Zhang, Yinhe Wu, Shenglei Zhao, Lin Du, Qi Feng, Weiwei Zhang, Zhongxu Wang, Feng Wu, Shuang Liu, Zhihong Liu, Yue Hao
Summary: In this study, the impact of gamma irradiation on quasi-vertical GaN Schottky barrier diodes with a passivation layer was investigated. It was found that the forward I-V characteristic improved while the reverse leakage slightly increased after 1 Mrad gamma irradiation. After annealing, the leakage current recovered while the forward current continued to increase. A possible mechanism based on the effect of gamma irradiation on the passivation film was proposed to explain the annealing behavior of the passivated device.
APPLIED PHYSICS EXPRESS
(2023)
Article
Chemistry, Physical
M. Al Huwayz, D. A. Jameel, Walter M. de Azevedo, Jorlandio F. Felix, N. Al Saqri, O. M. Lemine, S. Abu Alrub, M. Henini
Summary: This study investigates the impact of gamma radiation on the electrical properties of InAs/InGaAs quantum dot-based laser structures grown on both GaAs (Sample A) and Si (Sample B) substrates using molecular beam epitaxy. The results show that the electrical properties of the lasers change due to gamma radiation exposure, and the extent of the change depends on the substrate used for growth. Furthermore, this study highlights the importance of considering substrate materials in the design of radiation-hardened electronic devices.
PHYSICAL CHEMISTRY CHEMICAL PHYSICS
(2023)
Article
Engineering, Electrical & Electronic
Haiyong Wang, Wei Mao, Cui Yang, Jiabo Chen, Shenglei Zhao, Ming Du, Xiaofei Wang, Xuefeng Zheng, Chong Wang, Chunfu Zhang, Jincheng Zhang, Yue Hao
Summary: The lateral Schottky barrier diode (SBD) on p-GaN/AlGaN/GaN heterostructure with arrayed p-GaN islands termination (API-SBD) proposed in this study shows reduced reverse leakage current (I-R) and improved breakdown voltage (BV) due to the introduction of p-GaN islands termination. Compared to the counterpart SBD, the API-SBD exhibits a better trade-off between turn-on voltage (V-ON) and reverse leakage current (I-R). The capacitance of API-SBD is also approximately half of that of the traditional SBD.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
