Trapping phenomena in AlGaN/GaN HEMTs: a study based on pulsed and transient measurements

Published 2013 View Full Article

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Title
Trapping phenomena in AlGaN/GaN HEMTs: a study based on pulsed and transient measurements
Authors
Keywords
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Journal
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume 28, Issue 7, Pages 074021
Publisher
IOP Publishing
Online
2013-06-21
DOI
10.1088/0268-1242/28/7/074021

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